TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B APRIL 1989 REVISED APRIL 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Gallium-Arsenide-Diode Infrared Source
D
Source Is Optically Coupled to Silicon npn
Phototransistor
D
Choice of One, Two, or Four Channels
D
Choice of Three Current-Transfer Ratios
D
High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
D
Plastic Dual-In-Line Packages
D
UL Listed -- File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL192
1
2
3
4
8
7
6
5
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
TIL191
1
2
4
3
ANODE
CATHODE
COLLECTOR
EMITTER
TIL193
1
2
3
4
16
15
14
13
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
5
6
7
8
12
11
10
9
3ANODE
3CATHODE
4ANODE
4CATHODE
3COLLECTOR
3EMITTER
3COLLECTOR
3EMITTER
absolute maximum ratings at 25
C free-air (unless otherwise noted)
Input-to-output voltage (see Note 1)
3.535 kV peak or dc (
2.5 kV rms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 2)
35 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-collector voltage
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode reverse voltage
5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode continuous forward current at (or below) 25
C free-air temperature (see Note 3)
50 mA
. . . . . . .
Continuous total power dissipation at (or below) 25
C free-air temperature:
Phototransistor (see Note 4)
150 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode plus phototransistor per channel (see Note 5)
200 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
55
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100
C free-air temperature at the rate of 0.67 mA/
C.
4. Derate linearly to 100
C free-air temperature at the rate of 2 mW/
C.
5. Derate linearly to 100
C free-air temperature at the rate of 2.67 mW/
C.
Copyright
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B APRIL 1989 REVISED APRIL 1998
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics 25
C free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC = 0.5 mA,
IF = 0
35
V
V(BR)ECO
Emitter-collector breakdown voltage
IC = 100
A,
IF = 0
7
V
IR
Input diode static reverse current
VR = 5 V
10
A
IC(off))
Off-state collector current
VCE = 24 V,
IF = 0
100
nA
TIL191, TIL192, TIL193
20%
CTR
Current transfer ratio
TIL191A, TIL192A, TIL193A
IF = 5 mA,
VCE = 5 V
50%
TIL191B, TIL192B, TIL193B
100%
VF
Input diode static forward voltage
IF = 20 mA
1.4
V
VCE(sat)
Collector-emitter saturation voltage
IF = 5 mA,
IC = 1 mA
0.4
V
Cio
Input-to-output capacitance
Vinout = 0 mA,
See Note 6
f = 1 MHz,
1
pF
rio
Input-to-output internal resistance
Vinout =
1 mA,
See Note 6
1011
NOTE 6: These parameters are measured between all input diode leads shorted together and all phototransistor leads shorted together.
switching characteristics at 25
C free-air temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tr
Rise time
VCC = 5 V,
IC(on) = 2 mA,
6
s
tf
Fall time
CC
RL = 100
,
C(on)
See Figure 1
6
s
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
+
VCC = 5 V
Input (see Note A)
Output (see Note B)
RL = 100
47
tr
tf
90%
10%
90%
10%
Output
Input
0 V
VOLTAGE WAVEFORMS
NOTE C. Adjust amplitude of input
pulse for IC(on) = 2 mA
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZOUT = 50
, tr
15 ns, duty cycle
1%,
tw = 100
s.
B. The output waveform is monitored on a oscilloscope with the following characteristic: tr
12 ns, Rin
1 M
, Cin
20 pF.
Figure 1. Switching Times
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B APRIL 1989 REVISED APRIL 1998
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
80
60
20
0
0
0.2
0.4
0.6
0.8
1
1.2
Forward Current mA
100
140
FORWARD CURRENT
vs
FORWARD VOLTAGE
160
1.4
1.6
1.8
2
40
120
I F
VF Forward Voltage V
TA = 25
C
TA = 70
C
TA = 55
C
8
6
2
0
0
1
2
3
4
5
6
Collector Current mA
10
14
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
16
7
8
9
10
4
12
TIL191, TIL192, TIL193
I C
VCE Collector-Emitter Voltage V
IB = 0
TA = 25
C
IF = 12 mA
IF = 10 mA
IF = 8 mA
IF = 5 mA
IF = 2 mA
Figure 3
0.01
0.001
0.1
0.4
1
4
10
40
100
ON-STATE COLLECTOR CURRENT (NORMALIZED)
vs
INPUT DIODE FORWARD CURRENT
0.1
1
10
100
VCE = 5 V
Normalized to IF = 5 mA
TA = 25
C
IF Input Diode Forward Current mA
On-State Collector Current (Normalized)
I C(on)
Figure 4
Figure 5
0.8
0.7
0.5
0.4
0.9
1.1
1.2
1
0.6
50
25
0
25
50
75
100
TA Free-Air Temperature
C
VCE = 5 V
IF = 5 mA
IB = 0
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25
C)
vs
FREE-AIR TEMPERATURE
(Relative to V
alue at
On-State Collector Current
A
= 25
C)
T
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B APRIL 1989 REVISED APRIL 1998
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL INFORMATION
CL
L
C
Seating Plane
21,1 (0.831)
18,5 (0.728)
5,84 (0.230) MAX
3,81 (0.150)
2,54 (0.100)
0,58 (0.023)
0,43 (0.017)
105
90
2,79 (0.110)
2,29 (0.090)
0,51 (0.125) MIN
3,81 (0.150)
3,30 (0.130)
6,76 (0.266)
6,25 (0.246)
7,62 (0.300) T.P.
(see Note A)
1,27 (0.050)
1,12 (0.044)
10,2 (0.401)
9,2 (0.362)
4,80 (0.189)
4,19 (0.165)
Pin 1
TIL193
Pin 1
TIL192
Pin 1
TIL191
NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.
B. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 8. Mechanical Information
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