TL03x, TL03xA, TL03xY
ENHANCED-JFET LOW-POWER LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS180B FEBRUARY 1997 REVISED FEBRUARY 1999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Direct Upgrades for the TL06x Low-Power
BiFETs
D
Low Power Consumption . . .
6.5 mW/Channel Typ
D
On-Chip Offset-Voltage Trimming for
Improved DC Performance
(1.5 mV, TL031A)
D
Higher Slew Rate and Bandwidth Without
Increased Power Consumption
D
Available in TSSOP for Small Form-Factor
Designs
description
The TL03x series of JFET-input operational amplifiers offer improved dc and ac characteristics over the TL06x
family of low-power BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision
grades as low as 1.5 mV (TL031A) for greater accuracy in dc-coupled applications. Texas Instruments improved
BiFET process and optimized designs also yield improved bandwidths and slew rates without increased power
consumption. The TL03x devices are pin-compatible with the TL06x and can be used to upgrade existing
circuits or for optimal performance in new designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors without
sacrificing the output drive associated with bipolar amplifiers. This higher input impedance makes the TL3x
amplifiers better suited for interfacing with high-impedance sensors or very low-level ac signals. These devices
also feature inherently better ac response than bipolar or CMOS devices having comparable power
consumption.
The TL03x family has been optimized for micropower operation, while improving on the performance of the
TL06x series. Designers requiring significantly faster ac response should consider the Excalibur TLE206x
family of low-power BiFET operational amplifiers.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to
observe common-mode input-voltage limits and output swing when operating from a single supply. DC biasing
of the input signal is required and loads should be terminated to a virtual-ground node at midsupply. Texas
Instruments TLE2426 integrated virtual-ground generator is useful when operating BiFET amplifiers from single
supplies.
The TL03x devices are fully specified at
15 V and
5 V. For operation in low-voltage and/or single-supply
systems, Texas Instruments LinCMOS families of operational amplifiers (TLC-prefix) are recommended. When
moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate, bandwidth
requirements, and output loading.
The C-suffix devices are characterized for operation from 0
C to 70
C. The I-suffix devices are characterized
for operation from 40
C to 85
C. The M-suffix devices are characterized for operation over the full military
temperature range of 55
C to 125
C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TL03x, TL03xA, TL03xY
ENHANCED-JFET LOW-POWER LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS180B FEBRUARY 1997 REVISED FEBRUARY 1999
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOMAX
AT 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(N)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
0.8 mV
TL031ACD
TL032ACD
--
--
--
--
TL031ACP
TL032ACP
--
TL031Y
0
C to 70
C
1.5 mV
TL031CD
TL032CD
TL034ACD
--
--
--
TL034ACN
TL031CP
TL032CP
--
TL031Y
TL032Y
TL034Y
4 mV
TL034CD
--
--
--
TL034CN
TL034CPW
0.8 mV
TL031AID
TL032AID
--
--
--
--
TL031AIP
TL032AIP
--
--
40
C to 85
C
1.5 mV
TL031ID
TL032ID
TL034AID
--
--
--
TL034AIN
TL031IP
TL032IP
--
--
4 mV
TL034ID
--
--
--
TL034IN
--
--
--
0.8 mV
TL031AMD
TL032AMD
TL031AMFK
TL032AMFK
--
TL031AMJG
TL032AMJG
--
TL031AMP
TL032AMP
--
--
55
C to 125
C
1.5 mV
TL031MD
TL032MD
TL034AMD
TL031MFK
TL032MFK
TL034AMFK
TL034AMJ
TL031MJG
TL032MJG
TL034AMN
TL031MP
TL032MP
--
--
4 mV
TL034MD
TL034MFK
TL034MJ
--
TL034MN
--
--
--
The D and PW packages are available taped and reeled and are indicated by adding an R suffix to device type (e.g., TL034CDR or TL034CPWR).
Chip forms are tested at 25
C.
TL03x, TL03xA, TL03xY
ENHANCED-JFET LOW-POWER LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS180B FEBRUARY 1997 REVISED FEBRUARY 1999
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
symbol (each amplifier)
+
OUT
IN
IN+
equivalent schematic (each amplifier)
R2
OFFSET N2
OFFSET N1
IN
IN+
Q2
Q3
Q5
VCC+
Q14
Q6
R4
Q8 Q10
R7
Q11
R6
Q12
R3
C1
Q9
Q7
Q4
R5
R1
Q1
JF1 JF2
Q13
Q16
R8
JF3
JF4
Q15
Q17
OUT
D1
VCC
NOTE A: OFFSET N1 and OFFSET N2 are available only on the TL031.
(see Note A)
TL03x, TL03xA, TL03xY
ENHANCED-JFET LOW-POWER LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS180B FEBRUARY 1997 REVISED FEBRUARY 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TL031Y chip information
This chip, when properly assembled, has characteristics similar to the TL031C. Thermal compression or
ultrasonic bonding can be used on the doped-aluminum bonding pads. These chips can be mounted with
conductive epoxy or a gold-silicon preform.
Bonding-Pad Assignments
54
42
Chip Thickness: 15 MIls Typical
Bonding Pads: 4
4 Mils Minimum
TJ(max) = 150
C
Tolerances Are
10%.
All Dimensions Are in Mils.
Pin (4) is Internally Connected
to Backside of the Chip.
+
OUT
IN+
IN
VCC+
(7)
(3)
(2)
(6)
(1)
(4)
(5)
VCC
OFFSET N1
OFFSET N2
(1)
(2)
(3)
(4)
(6)
(7)
(8)
(5)
PDF 
ZIP