TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS
TM
PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E JULY 1983 REVISED AUGUST 1994
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages
1.4 V to 16 V
D
True Single-Supply Operation
D
Common-Mode Input Voltage Range
Includes the Negative Rail
D
Low Noise . . . 30 nV/
Hz Typ at 1 kHz
(High Bias)
D
ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
description
The TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize Texas
Instruments silicon-gate LinCMOS
TM
process,
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
TM
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0
C to 70
C.
AVAILABLE OPTIONS
VIOmax
PACKAGED DEVICES
CHIP FORM
TA
VIOmax
AT 25
C
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
CHIP FORM
(Y)
10 mV
TLC251CD
TLC251CP
TLC251Y
0
C to 70
C
5 mV
TLC251ACD
TLC251ACP
--
2 mV
TLC251BCD
TLC251BCP
--
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25
C.
Copyright
1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
OFFSET N1
IN
IN +
V
DD
/GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
symbol
+
OUT
BIAS SELECT
IN +
IN
OFFSET N1
OFFSET N2
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS
TM
PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E JULY 1983 REVISED AUGUST 1994
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
schematic
Current
Control
ESD-
Protective
Network
ESD-
Protective
Network
ESD-
Protective
Network
VDD
IN +
IN
OFFSET
N1
OFFSET
N2
VDD /GND
OUT
BIAS
SELECT
7
3
2
1
5
4
6
8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS
TM
PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E JULY 1983 REVISED AUGUST 1994
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLC251Y chip information
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJMAX = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
BIAS SELECT
IN +
IN
OFFSET N1
OFFSET N2
VDD
VDD /GND
(7)
(6)
(8)
(3)
(2)
(1)
(5)
(4)
48
55
(2)
(1)
(8)
(7)
(6)
(5)
(3)
(4)
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS
TM
PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E JULY 1983 REVISED AUGUST 1994
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input)
0.3 V to 18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short circuit at (or below) 25
C free-air temperature (see Note 3)
unlimited
. . . . . . . . . . . . . . . . . .
Continuous total dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to VDD /GND.
2. Differential voltages are at IN+ with respect to IN .
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
C
TA = 70
C
POWER RATING
D
725 mW
5.8 mW/
C
464 mW
P
1000 mW
8.0 mW/
C
640 mW
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VDD
1.4
16
V
VDD = 1.4 V
0
0.2
Common mode input voltage VIC
VDD = 5 V
0.2
4
V
Common-mode input voltage, VIC
VDD = 10 V
0.2
9
V
VDD = 16 V
0.2
14
Operating free-air temperature, TA
0
70
C
Bias-select voltage
See Application
Information
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS
TM
PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001E JULY 1983 REVISED AUGUST 1994
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TEST
TLC251C, TLC251AC, TLC251BC
PARAMETER
TEST
CONDITIONS
TA
VDD = 5 V
VDD = 10 V
UNIT
CONDITIONS
A
MIN
TYP
MAX
MIN
TYP
MAX
TLC251C
25
C
1.1
10
1.1
10
TLC251C
VO = 1 4 V
Full range
12
12
VIO
Input offset voltage
TLC251AC
VO = 1.4 V,
VIC = 0 V,
25
C
0.9
5
0.9
5
mV
VIO
Input offset voltage
TLC251AC
IC
,
RS = 50
,
R
10 k
Full range
6.5
6.5
mV
TLC251BC
RL = 10 k
25
C
0.34
2
0.39
2
TLC251BC
Full range
3
3
VIO
Average temperature coefficient of
input offset voltage
25
C to
70
C
1.8
2
V/
C
IIO
Input offset current (see Note 4)
VO = VDD/2,
25
C
0.1
0.1
pA
IIO
Input offset current (see Note 4)
O
DD ,
VIC = VDD/2
70
C
7
300
7
300
pA
IIB
Input bias current (see Note 4)
VO = VDD/2,
25
C
0.6
0.7
pA
IIB
Input bias current (see Note 4)
O
DD ,
VIC = VDD/2
70
C
40
600
50
600
pA
VICR
Common-mode input voltage
25
C
0.2
to
4
0.3
to
4.2
0.2
to
9
0.3
to
9.2
V
VICR
g
range (see Note 5)
Full range
0.2
to
3.5
0.2
to
8.5
V
V
100
V
25
C
3.2
3.8
8
8.5
VOH
High-level output voltage
VID = 100 mV,
RL = 10 k
0
C
3
3.8
7.8
8.5
V
RL = 10 k
70
C
3
3.8
7.8
8.4
V
100
V
25
C
0
50
0
50
VOL
Low-level output voltage
VID = 100 mV,
IOL = 0
0
C
0
50
0
50
mV
IOL = 0
70
C
0
50
0
50
L
i
l diff
ti l
lt
R
10 k
25
C
5
23
10
36
AVD
Large-signal differential voltage
amplification
RL = 10 k
,
See Note 6
0
C
4
27
7.5
42
V/mV
am lification
See Note 6
70
C
4
20
7.5
32
25
C
65
80
65
85
CMRR
Common-mode rejection ratio
VIC = VICRmin
0
C
60
84
60
88
dB
70
C
60
85
60
88
S
l
lt
j
ti
ti
V
5 V t 10 V
25
C
65
95
65
95
kSVR
Supply-voltage rejection ratio
(
VDD/
VIO)
VDD = 5 V to 10 V,
VO = 1 4 V
0
C
60
94
60
94
dB
(
VDD/
VIO)
VO = 1.4 V
70
C
60
96
60
96
II(SEL) Input current (BIAS SELECT)
VI(SEL) = 0
25
C
1.4
1.9
A
VO = VDD/2,
25
C
675
1600
950
2000
IDD
Supply current
VO VDD/2,
VIC = VDD/2,
N l
d
0
C
775
1800
1125
2200
A
No load
70
C
575
1300
750
1700
Full range is 0
C to 70
C.
NOTES:
4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
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