TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS
TM
QUAD OPERATIONAL AMPLIFIERS
SLOS003F JUNE 1983 REVISED AUGUST 1994
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
A-Suffix Versions Offer 5-mV V
IO
D
B-Suffix Versions Offer 2-mV V
IO
D
Wide Range of Supply Voltages
1.4 V to 16 V
D
True Single-Supply Operation
D
Common-Mode Input Voltage Includes the
Negative Rail
D
Low Noise . . . 25 nV/
Hz Typ at f = 1 kHz
(High-Bias Version)
description
The TLC254, TLC254A, TLC254B, TLC25L4,
TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A
and TL25M4B are low-cost, low-power quad
operational amplifiers designed to operate with
single or dual supplies. These devices utilize the
Texas Instruments silicon gate LinCMOS
TM
process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV
maximum, very high input impedances, and extremely low input offset and bias currents. Because the input
common-mode range extends to the negative rail and the power consumption is extremely low, this series is
ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a
1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in degradation of the device parametric performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for these
devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit
using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of
these devices. Many features associated with bipolar technology are available with LinCMOS operational
amplifiers without the power penalties of traditional bipolar devices.
Available options
VIOmax
PACKAGED DEVICES
CHIP FORM
TA
VIOmax
AT 25
C
SMALL OUTLINE
(D)
PLASTIC DIP
(N)
TSSOP
(PW)
CHIP FORM
(Y)
10 mV
TLC254CD
TLC254CN
TLC254CPW
TLC254Y
5 mV
TLC254ACD
TLC254ACN
--
--
2 mV
TLC254BCD
TLC254BCN
--
--
10 mV
TLC25L4CD
TLC25L4CN
TLC25L4CPW
TLC25L4Y
0
C to 70
C
5 mV
TLC25L4ACD
TLC25L4ACN
--
--
2 mV
TLC25L2BCD
TLC25L4BCN
--
--
10 mV
TLC25M4CD
TLC25M4CN
TLC25M4CPW
TLC25M4Y
5 mV
TLC25M4ACD
TLC25M4ACN
--
--
2 mV
TLC25M4BCD
TLC25M4BCN
--
--
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips
are tested at 25
C.
Copyright
1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN +
V
DD
2IN +
2IN
2OUT
4OUT
4IN
4IN +
V
DD
/GND
3IN +
2IN
3OUT
D, N, OR PW PACKAGE
(TOP VIEW)
symbol (each amplifier)
+
OUT
IN +
IN
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS
TM
QUAD OPERATIONAL AMPLIFIERS
SLOS003F JUNE 1983 REVISED AUGUST 1994
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and
signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications
are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the
difficult problems associated with single-battery and solar-cell-powered applications. This series includes
devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and
the small-outline packages. The device is also available in chip form.
These devices are characterized for operation from 0
C to 70
C.
DEVICE FEATURES
PARAMETER
TLC25L4_C
(LOW BIAS)
TLC25M4_C
(MEDIUM BIAS)
TLC254_C
(HIGH BIAS)
Supply current (Typ)
40
A
600
A
4000
A
Slew rate (Typ)
0.04 V/
A
0.6 V/
A
4.5 V/
A
Input offset voltage (Max)
TLC254C, TLC25L4C, TLC25M4C
TLC254AC, TLC25L4AC, TLC25M4AC
TLC254BC, TLC25L4BC, TLC25M4BC
10 mV
5 mV
2 mV
10 mV
5 mV
2 mV
10 mV
5 mV
2 mV
Offset voltage drift (Typ)
0.1
V/month
0.1
V/month
0.1
V/month
Offset voltage temperature coefficient (Typ)
0.7
V/
C
2
V/
C
5
V/
C
Input bias current (Typ)
1 pA
1 pA
1 pA
Input offset current (Typ)
1 pA
1 pA
1 pA
The long-term drift value applies after the first month.
equivalent schematic (each amplifier)
VDD
IN +
IN
VDD /GND
OUT
ESD-
Protective
Network
ESD-
Protective
Network
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS
TM
QUAD OPERATIONAL AMPLIFIERS
SLOS003F JUNE 1983 REVISED AUGUST 1994
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
chip information
These chips, when properly assembled, display characteristics similar to the TLC25_4C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with
conductive epoxy or a gold-silicon preform.
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (11) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
1OUT
1IN +
1IN
VDD
(4)
(6)
(3)
(2)
(5)
(1)
+
(7)
2IN +
2IN
2OUT
(11)
VDD /GND
+
3OUT
3IN +
3IN
(13)
(10)
(9)
(12)
(8)
+
(14)
4OUT
4IN +
4IN
BONDING PAD ASSIGNMENTS
68
108
(14)
(13)
(12) (11)
(10)
(9)
(8)
(7)
(6)
(5)
(5)
(4)
(3)
(2)
(1)
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS
TM
QUAD OPERATIONAL AMPLIFIERS
SLOS003F JUNE 1983 REVISED AUGUST 1994
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage (see Note 2)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range (any input)
0.3 V to 18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit at (or below) 25
C free-air temperature (see Note 3)
unlimited
. . . . . . . . . . . . . . . . . .
Continuous total dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range
0
C to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to VDD /GND.
2. Differential voltages are at IN+, with respect to IN .
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
DERATING FACTOR
TA = 70
C
PACKAGE
A
POWER RATING
ABOVE TA = 25
C
A
POWER RATING
D
725 mW
5.8 mW/
C
464 mW
N
1050 mW
9.2 mW/
C
736 mW
PW
700 mW
5.6 mW/
C
448 mW
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VDD
1.4
16
V
VDD = 1.4 V
0
0.2
Common mode input voltage VIC
VDD = 5 V
0.2
4
V
Common-mode input voltage, VIC
VDD = 10 V
0.2
9
V
VDD = 16 V
0.2
14
Operating free-air temperature, TA
0
70
C
TLC254, TLC254A, TLC254B, TLC254Y
, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y
, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS QUAD OPERA
TIONAL
AMPLIFIERS
SLOS003F JUNE 1983 REVISED
AUGUST
1994
TM
POST
OFFICE BOX 655303 DALLAS,
TEXAS
75265
5
electrical characteristics at specified free-air temperature, V
DD
= 1.4 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T
TLC254_C
TLC25L4_C
TLC25M4_C
UNIT
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
TLC25 4C
25
C
10
10
10
TLC25_4C
0
C to 70
C
12
12
12
VIO
Input offset voltage
TLC25 4AC
VO = 0 2 V
RS = 50
25
C
5
5
5
mV
VIO
Input offset voltage
TLC25_4AC
VO = 0.2 V,
RS = 50
0
C to 70
C
6.5
6.5
6.5
mV
TLC25 4BC
25
C
2
2
2
TLC25_4BC
0
C to 70
C
3
3
3
aVIO
Average temperature coefficient of
25
C to
1
1
1
V/
C
aVIO
g
input offset voltage
70
C
1
1
1
V/
C
IIO
Input offset current
VO = 0 2 V
25
C
1
1
1
pA
IIO
Input offset current
VO = 0.2 V
0
C to 70
C
300
300
300
pA
IIB
Input bias current
VO = 0 2 V
25
C
1
1
1
pA
IIB
Input bias current
VO = 0.2 V
0
C to 70
C
600
600
600
pA
VICR
Common-mode input voltage range
25
C
0 to
0.2
0 to
0.2
0 to
0.2
V
VOM
Peak output voltage swing
VID = 100 mV
25
C
450
700
450
700
450
700
mV
AVD
Large-signal differential voltage
amplification
VO = 100 to 300 mV,
RS = 50
25
C
10
20
20
V/mV
CMRR
Common-mode rejection ratio
VO = 0.2 V,
VIC = VICRmin
25
C
60
77
60
77
60
77
dB
IDD
Supply current
VO = 0.2 V,
No load
25
C
600
750
50
68
400
500
A
All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise noted, an output load resistor is
connected from the output to ground and has the following value: for low bias, RL = 1 M
, for medium bias RL = 100 k
,
and for high bias RL = 10 k
.
The output swings to the potential of VDD/GND.
operating characteristics, V
DD
= 1.4 V, T
A
= 25
C
PARAMETER
TEST CONDITIONS
TLC254_C
TLC25L4_C
TLC25M4_C
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
SR
Slew rate at unity gain
See Figure 1
0.1
0.001
0.01
V/
s
B1
Unity-gain bandwidth
AV = 40 dB,
RS = 50
,
CL = 10 pF,
See Figure 1
12
12
12
kHz
Overshoot factor
See Figure 1
30%
35%
35%
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