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Электронный компонент: TLC3704ID

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TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Push-Pull CMOS Output Drives Capacitive
Loads Without Pullup Resistor,
I
O
=
8 mA
D
Very Low Power . . . 200
W Typ at 5 V
D
Fast Response Time . . . t
PLH
= 2.7
s Typ
With 5-mV Overdrive
D
Single Supply Operation . . . 3 V to 16 V
TLC3704M . . . 4 V to 16 V
D
On-Chip ESD Protection
description
The TLC3704 consists of four independent
micropower voltage comparators designed to
operate from a single supply and be compatible
with modern HCMOS logic systems. They are
functionally similar to the LM339 but use 1/20th
the power for similar response times. The
push-pull CMOS output stage drives capacitive
loads directly without a power-consuming pullup
resistor to achieve the stated response time.
Eliminating the pullup resistor not only reduces
power dissipation, but also saves board space
and component cost. The output stage is also fully
compatible with TTL requirements.
Texas Instruments LinCMOS
process offers
superior analog performance to standard CMOS
processes. Along with the standard CMOS
advantages of low power without sacrificing
speed, high input impedance, and low bias
currents, the LinCMOS process offers extremely
stable input offset voltages with large differential
input voltages. This characteristic makes it
possible to build reliable CMOS comparators.
The TLC3704C is characterized for operation
over the commercial temperature range of 0
C to
70
C. The TLC3704I is characterized for
operation over the extended industrial tempera-
ture range of 40
C to 85
C. The TLC3704M is
characterized for operation over the full military
temperature range of 55
C to 125
C. The
TLC3704Q is characterized for operation from
40
C to 125
C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright
2002, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
GND
NC
4IN +
NC
4IN
V
DD
NC
2IN
NC
2IN +
FK PACKAGE
(TOP VIEW)
2OUT
1OUT
NC
3IN
3IN+
3OUT
4OUT
1IN+
NC
1IN
D, J, OR N PACKAGE
(TOP VIEW)
NC No internal connection
OUT
symbol (each comparator)
IN +
IN
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
2OUT
V
DD
2IN
2IN +
1IN
1IN +
3OUT
4OUT
GND
4IN +
4IN
3IN +
3IN
1
2
3
4
5
6
7
14
13
12
11
10
9
8
PW PACKAGE
(TOP VIEW)
1OUT
2OUT
V
DD
2IN
2IN +
1IN
1IN +
3OUT
4OUT
GND
4IN +
4IN
3IN +
3IN
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
VIOmax
PACKAGE
TA
VIOmax
at 25
C
SMALL OUTLINE
(D)
CERAMIC
(FK)
CERAMIC DIP
(J)
PLASTIC DIP
(N)
TSSOP
(PW)
0
C to 70
C
5 mV
TLC3704CD
--
--
TLC3704CN
TLC3704CPW
40
C to 85
C
5 mV
TLC3704ID
--
--
TLC3704IN
TLC3704IPW
55
C to 125
C
5 mV
--
TLC3704MFK
TLC3704MJ
--
--
40
C to 125
C
5 mV
--
--
TLC3704QJ
--
--
The D and PW packages are available taped and reeled. Add R suffix to the device type (e.g., TLC3704CDR).
functional block diagram (each comparator)
VDD
GND
OUT
Differential
Input
Circuits
IN+
IN
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
DD
(see Note 1)
0.3 V to 18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
0.3 to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range, V
O
0.3 to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
5 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
(each output)
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total supply current into V
DD
40
mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of GND
60 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLC3704C
0 to 70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLC3704I
40
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLC3704M
55
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLC3704Q
40
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case temperature for 60 seconds: FK package
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or N package
260
C
. . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package
300
C
. . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN .
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
C
TA = 70
C
POWER RATING
TA = 85
C
POWER RATING
TA = 125
C
POWER RATING
D
FK
J
N
PW
950 mW
1375 mW
1375 mW
1150 mW
675 mW
7.6 mW/
C
11.0 mW/
C
11.0 mW/
C
9.2 mW/
C
5.4 mW/
C
608 mW
880 mW
880 mW
736 mW
432 mW
494 mW
715 mW
715 mW
598 mW
351 mW
N/A
275 mW
275 mW
N/A
N/A
recommended operating conditions
TLC3704C
UNIT
MIN
NOM
MAX
UNIT
Supply voltage, VDD
3
5
16
V
Common-mode input voltage, VIC
0.2
VDD 1.5
V
High-level output current, IOH
20
mA
Low-level output current, IOL
20
mA
Operating free-air temperature, TA
0
70
C
electrical characteristics at specified operating free-air temperature, V
DD
= 5 V
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
TLC3704C
UNIT
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
VIO
Input offset voltage
VDD = 5 V to 10 V,
25
C
1.2
5
mV
VIO
Input offset voltage
VIC = VICRmin, See Note 3
0
C to 70
C
6.5
mV
IIO
Input offset current
VIC = 2 5 V
25
C
1
pA
IIO
Input offset current
VIC = 2.5 V
70
C
0.3
nA
IIB
Input bias current
VIC = 2 5 V
25
C
5
pA
IIB
Input bias current
VIC = 2.5 V
70
C
0.6
nA
VICR
Common mode input voltage range
25
C
0 to
VDD 1
V
VICR
Common-mode input voltage range
0
C to 70
C
0 to
VDD 1.5
V
25
C
84
CMRR
Common-mode rejection ratio
VIC = VICRmin
70
C
84
dB
0
C
84
25
C
85
kSVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V
70
C
85
dB
0
C
85
VOH
High level output voltage
VID = 1 V
IOH = 4 mA
25
C
4.5
4.7
V
VOH
High-level output voltage
VID = 1 V,
IOH = 4 mA
70
C
4.3
V
VOL
Low level output voltage
VID = 1 V
IOH = 4 mA
25
C
210
300
mV
VOL
Low-level output voltage
VID = 1 V,
IOH = 4 mA
70
C
375
mV
IDD
Supply current (all four comparators)
Outputs low
No load
25
C
35
80
A
IDD
Supply current (all four comparators)
Outputs low,
No load
0
C to 70
C
100
A
All characteristics are measured with zero common-mode voltage unless otherwise noted.
NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
TLC3704I
UNIT
MIN
NOM
MAX
UNIT
Supply voltage, VDD
3
5
16
V
Common-mode input voltage, VIC
0.2
VDD 1.5
V
High-level output current, IOH
20
mA
Low-level output current, IOL
20
mA
Operating free-air temperature, TA
40
85
C
electrical characteristics at specified operating free-air temperature, V
DD
= 5 V, V
IC
= 0 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
TA
TLC3704I
UNIT
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
VIO
Input offset voltage
VDD = 5 V to 10 V,
25
C
1.2
5
mV
VIO
Input offset voltage
VIC = VICRmin, See Note 3
40
C to 85
C
7
mV
IIO
Input offset current
VIC = 2 5 V
25
C
1
pA
IIO
Input offset current
VIC = 2.5 V
85
C
1
nA
IIB
Input bias current
VIC = 2 5 V
25
C
5
pA
IIB
Input bias current
VIC = 2.5 V
85
C
2
nA
VICR
Common mode input voltage range
25
C
0 to
VDD 1
V
VICR
Common-mode input voltage range
40
C to 85
C
0 to
VDD 1.5
V
25
C
84
CMRR
Common-mode rejection ratio
VIC = VICRmin
85
C
84
dB
40
C
83
25
C
85
kSVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V
85
C
85
dB
40
C
83
VOH
High level output voltage
VID = 1 V
IOH = 4 mA
25
C
4.5
4.7
V
VOH
High-level output voltage
VID = 1 V,
IOH = 4 mA
85
C
4.3
V
VOL
Low level output voltage
VID = 1 V
IOH = 4 mA
25
C
210
300
mV
VOL
Low-level output voltage
VID = 1 V,
IOH = 4 mA
85
C
400
mV
IDD
Supply current (all four comparators)
Outputs low
No load
25
C
35
80
A
IDD
Supply current (all four comparators)
Outputs low,
No load
40
C to 85
C
125
A
NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
TLC3704M
UNIT
MIN
NOM
MAX
UNIT
Supply voltage, VDD
4
5
16
V
Common-mode input voltage, VIC
0
VDD 1.5
V
High-level output current, IOH
20
mA
Low-level output current, IOL
20
mA
Operating free-air temperature, TA
55
125
C
electrical characteristics at specified operating free-air temperature, V
DD
= 5 V, V
IC
= 0 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
TA
TLC3704M
UNIT
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
VIO
Input offset voltage
VDD = 5 V to 10 V,
25
C
1.2
5
mV
VIO
Input offset voltage
VIC = VICRmin,
See Note 3
55
C to 125
C
10
mV
IIO
Input offset current
VIC = 2 5 V
25
C
1
pA
IIO
Input offset current
VIC = 2.5 V
125
C
15
nA
IIB
Input bias current
VIC = 2 5 V
25
C
5
pA
IIB
Input bias current
VIC = 2.5 V
125
C
30
nA
VICR
Common mode input voltage range
25
C
0 to
VDD 1
V
VICR
Common-mode input voltage range
55
C to 125
C
0 to
VDD 1.5
V
25
C
84
CMRR
Common-mode rejection ratio
VIC = VICRmin
125
C
83
dB
55
C
82
25
C
85
kSVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V
125
C
85
dB
55
C
82
VOH
High level output voltage
VID = 1 V
IOH = 4 mA
25
C
4.5
4.7
V
VOH
High-level output voltage
VID = 1 V,
IOH = 4 mA
125
C
4.2
V
VOL
Low level output voltage
VID = 1 V
IOH = 4 mA
25
C
210
300
mV
VOL
Low-level output voltage
VID = 1 V,
IOH = 4 mA
125
C
500
mV
IDD
Supply current (all four comparators)
Outputs low
No load
25
C
35
80
A
IDD
Supply current (all four comparators)
Outputs low,
No load
55
C to 125
C
175
A
NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
TLC3704Q
UNIT
MIN
NOM
MAX
UNIT
Supply voltage, VDD
3
5
16
V
Common-mode input voltage, VIC
0.2
VDD 1.5
V
High-level output current, IOH
20
mA
Low-level output current, IOL
20
mA
Operating free-air temperature, TA
40
125
C
electrical characteristics at specified operating free-air temperature, V
DD
= 5 V, V
IC
= 0 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
TA
TLC3704Q
UNIT
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
VIO
Input offset voltage
VDD = 5 V to 10 V,
25
C
1.2
5
mV
VIO
Input offset voltage
VIC = VICRmin, See Note 3
40
C to 125
C
7
mV
IIO
Input offset current
VIC = 2 5 V
25
C
1
pA
IIO
Input offset current
VIC = 2.5 V
125
C
15
nA
IIB
Input bias current
VIC = 2 5 V
25
C
5
pA
IIB
Input bias current
VIC = 2.5 V
125
C
30
nA
VICR
Common-mode input voltage
25
C
0 to VDD 1
V
VICR
g
range
40
C to 125
C
0 to VDD 1.5
V
25
C
84
CMRR
Common-mode rejection ratio
VIC = VICRmin
125
C
83
dB
40
C
83
25
C
85
kSVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V
125
C
85
dB
40
C
83
VOH
High level output voltage
VID = 1 V
IOH = 4 mA
25
C
4.5
4.7
V
VOH
High-level output voltage
VID = 1 V,
IOH = 4 mA
125
C
4.2
V
VOL
Low level output voltage
VID = 1 V
IOH = 4 mA
25
C
210
300
mV
VOL
Low-level output voltage
VID = 1 V,
IOH = 4 mA
125
C
500
mV
IDD
Supply current (all four
Outputs low
No load
25
C
35
80
A
IDD
y
(
comparators)
Outputs low,
No load
40
C to 125
C
175
A
NOTE 3: The offset voltage limits given are the maximum values required to drive the output up to 4.5 V or down to 0.3 V.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
switching characteristics, V
DD
= 5 V, T
A
= 25
C
PARAMETER
TEST CONDITIONS
TLC3704C, TLC3704I
TLC3704M, TLC3704Q
UNIT
MIN
TYP
MAX
Overdrive = 2 mV
4.5
f
10 kH
Overdrive = 5 mV
2.7
tPLH Propagation delay time low to high level output
f = 10 kHz,
CL = 50 pF
Overdrive = 10 mV
1.9
s
tPLH Propagation delay time, low-to-high-level output
CL = 50 F
Overdrive = 20 mV
1.4
s
Overdrive = 40 mV
1.1
VI = 1.4-V step at IN +
1.1
Overdrive = 2 mV
4
f
10 kH
Overdrive = 5 mV
2.3
tPHL Propagation delay time high to low level output
f = 10 kHz,
CL = 50 pF
Overdrive = 10 mV
1.5
s
tPHL Propagation delay time, high-to-low-level output
CL = 50 F
Overdrive = 20 mV
0.95
s
Overdrive = 40 mV
0.65
VI = 1.4-V step at IN +
0.15
tf
Fall time
f = 10 kHz,
CL = 50 pF
Overdrive = 50 mV
50
ns
tr
Rise time
f = 10 kHz,
CL = 50 pF
Overdrive = 50 mV
125
ns
Simultaneous switching of inputs causes degradation in output response.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
LinCMOS process
The LinCMOS process is a linear polysilicon-gate CMOS process. Primarily designed for single-supply
applications, LinCMOS products facilitate the design of a wide range of high-performance analog functions from
operational amplifiers to complex mixed-mode converters.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS products. Direct further questions to the nearest TI field sales office.
electrostatic discharge
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g., during board assembly. If a circuit in which one amplifier from a dual op amp is being
used and the unused pins are left open, high voltages tends to develop. If there is no provision for ESD
protection, these voltages may eventually punch through the gate oxide and cause the device to fail. To prevent
voltage buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than the normal operating voltages but lower than the breakdown
voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the
shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are
small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as
tens of picoamps.
To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in
Figure 1. This circuit can withstand several successive 2-kV ESD pulses, while reducing or eliminating leakage
currents that may be drawn through the input pins. A more detailed discussion of the operation of the TI
ESD-protection circuit is presented on the next page.
All input and output pins on LinCMOS and Advanced LinCMOS products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 2000 V discharged from a 100-pF capacitor through
a 1500-
resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
To Protected Circuit
D3
R2
Q2
D2
D1
Q1
Input
GND
R1
VDD
Figure 1. LinCMOS ESD-Protection Schematic
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
input protection circuit operation
Texas Instruments patented protection circuitry allows for both positive- and negative-going ESD transients.
These transients are characterized by extremely fast rise times and usually low energies, and can occur both
when the device has all pins open and when it is installed in a circuit.
positive ESD transients
Initial positive charged energy is shunted through Q1 to V
SS
. Q1 turns on when the voltage at the input rises
above the voltage on the V
DD
pin by a value equal to the V
BE
of Q1. The base current increases through R2
with input current as Q1 saturates. The base current through R2 forces the voltage at the drain and gate of Q2
to exceed its threshold level (V
T
22 to 26 V) and turn Q2 on. The shunted input current through Q1 to V
SS
is
now shunted through the n-channel enhancement-type MOSFET Q2 to V
SS
. If the voltage on the input pin
continues to rise, the breakdown voltage of the zener diode D3 is exceeded, and all remaining energy is
dissipated in R1 and D3. The breakdown voltage of D3 is designed to be 24 to 27 V, which is well below the gate-
oxide voltage of the circuit to be protected.
negative ESD transients
The negative charged ESD transients are shunted directly through D1. Additional energy is dissipated in R1
and D2 as D2 becomes forward biased. The voltage seen by the protected circuit is 0.3 V to 1 V (the forward
voltage of D1 and D2).
circuit-design considerations
LinCMOS products are being used in actual circuit environments that have input voltages that exceed the
recommended common-mode input voltage range and activate the input protection circuit. Even under normal
operation, these conditions occur during circuit power up or power down, and in many cases, when the device
is being used for a signal conditioning function. The input voltages can exceed V
ICR
and not damage the device
only if the inputs are current limited. The recommended current limit shown on most product data sheets is
5 mA. Figures 2 and 3 show typical characteristics for input voltage versus input current.
Normal operation and correct output state can be expected even when the input voltage exceeds the positive
supply voltage. Again, the input current should be externally limited even though internal positive current limiting
is achieved in the input protection circuit by the action of Q1. When Q1 is on, it saturates and limits the current
to approximately 5-mA collector current by design. When saturated, Q1 base current increases with input
current. This base current is forced into the V
DD
pin and into the device I
DD
or the V
DD
supply through R2
producing the current limiting effects shown in Figure 2. This internal limiting lasts only as long as the input
voltage is below the V
T
of Q2.
When the input voltage exceeds the negative supply voltage, normal operation is affected and output voltage
states may not be correct. Also, the isolation between channels of multiple devices (duals and quads) can be
severely affected. External current limiting must be used since this current is directly shunted by D1 and D2 and
no internal limiting is achieved. If normal output voltage states are required, an external input voltage clamp is
required (see Figure 4).
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
circuit-design considerations (continued)
Figure 2
Input Current
mA
VDD
VDD + 4
VDD + 8
VDD + 12
VI Input Voltage V
INPUT CURRENT
vs
INPUT VOLTAGE
TA = 25
C
8
7
6
5
4
3
2
1
0
I I
Figure 3
VDD 0.3
VI Input Voltage V
INPUT CURRENT
vs
INPUT VOLTAGE
TA = 25
C
VDD 0.5
VDD 0.7
VDD 0.9
10
9
8
7
6
5
4
3
2
1
0
Input Current
mA
I I
+
1/2
TLC3704
Vref
VI
VDD
See Note A
RI
NOTE A: If the correct input state is required when the negative input exceeds GND, a Schottky clamp is required.
Negative Voltage Input Current Limit :
R
I
+
*
V
I
*
V
DD
*
(
*
0.3 V)
5 mA
R
I
+
V
I
*
V
DD
*
0.3 V
5 mA
Positive Voltage Input Current Limit :
Figure 4. Typical Input Current-Limiting Configuration for a LinCMOS Comparator
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
The TLC3704 contains a digital output stage which, if held in the linear region of the transfer curve, can cause
damage to the device. Conventional operational amplifier/comparator testing incorporates the use of a servo
loop which is designed to force the device output to a level within this linear region. Since the servo-loop method
of testing cannot be used, we offer the following alternatives for measuring parameters such as input offset
voltage, common-mode rejection, etc.
To verify that the input offset voltage falls within the limits specified, the limit value is applied to the input as shown
in Figure 5(a). With the noninverting input positive with respect to the inverting input, the output should be high.
With the input polarity reversed, the output should be low.
A similar test can be made to verify the input offset voltage at the common-mode extremes. The supply voltages
can be slewed as shown in Figure 5(b) for the V
ICR
test, rather than changing the input voltages, to provide
greater accuracy.
+
5 V
Applied VIO
Limit
VO
+
1 V
Applied VIO
Limit
VO
4 V
(a) VIO WITH VIC = 0 V
(b) VIO WITH VIC = 4 V
Figure 5. Method for Verifying That Input Offset Voltage Is Within Specified Limits
A close approximation of the input offset voltage can be obtained by using a binary search method to vary the
differential input voltage while monitoring the output state. When the applied input voltage differential is equal,
but opposite in polarity, to the input offset voltage, the output changes states.
Figure 6 illustrates a practical circuit for direct dc measurement of input offset voltage that does not bias the
comparator in the linear region. The circuit consists of a switching mode servo loop in which IC1a generates
a triangular waveform of approximately 20-mV amplitude. IC1b acts as a buffer, with C2 and R4 removing any
residual d.c. offset. The signal is then applied to the inverting input of the comparator under test, while the
noninverting input is driven by the output of the integrator formed by IC1c through the voltage divider formed
by R8 and R9. The loop reaches a stable operating point when the output of the comparator under test has a
duty cycle of exactly 50%, which can only occur when the incoming triangle wave is sliced symmetrically or when
the voltage at the noninverting input exactly equals the input offset voltage.
Voltage divider R8 and R9 provides an increase in the input offset voltage by a factor of 100 to make
measurement easier. The values of R5, R7, R8, and R9 can significantly influence the accuracy of the reading;
therefore, it is suggested that their tolerance level be one percent or lower.
Measuring the extremely low values of input current requires isolation from all other sources of leakage current
and compensation for the leakage of the test socket and board. With a good picoammeter, the socket and board
leakage can be measured with no device in the socket. Subsequently, this open socket leakage value can be
subtracted from the measurement obtained with a device in the socket to obtain the actual input current of the
device.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
+
DUT
VDD
+
+
+
C2
1
F
R4
47 k
R5
1.8 k
1%
C3
0.68
F
IC1c
1/4 TLC274CN
IC1a
1/4 TLC274CN
IC1b
1/4 TLC274CN
R6
1 M
R7
1.8 k
1%
R8
10 k
1%
R1
240 k
R2
10 k
C1
0.1
F
R3
100
C4
0.1
F
Integrator
R9
100
1%
Buffer
Triangle
Generator
VIO
(X100)
Figure 6. Circuit for Input Offset Voltage Measurement
Response time is defined as the interval between the application of an input step function and the instant when
the output reaches 50% of its maximum value. Response time for the low-to-high-level output is measured from
the leading edge of the input pulse, while response time for the high-to-low-level output is measured from the
trailing edge of the input pulse. Response time measurement at low input signal levels can be greatly affected
by the input offset voltage. The offset voltage should be balanced by the adjustment at the inverting input as
shown in Figure 7, so that the circuit is just at the transition point. A low signal, for example 105-mV or 5-mV
overdrive, causes the output to change state.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
+
DUT
VDD
CL
(see Note A)
Pulse
Generator
10
10-Turn
Potentiometer
1 V
1 V
1 k
50
1
F
0.1
F
TEST CIRCUIT
100 mV
Input
Overdrive
90%
50%
10%
tr
tPLH
100 mV
Input
Overdrive
90%
50%
10%
tf
tPHL
Low-to-High
Level Output
High-to-Low
Level Output
VOLTAGE WAVEFORMS
NOTE A: CL includes probe and jig capacitance.
Figure 7. Response, Rise, and Fall Times Circuit and Voltage Waveforms
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
Input offset voltage
Distribution
8
IIB
Input bias current
vs Free-air temperature
9
CMRR
Common-mode rejection ratio
vs Free-air temperature
10
kSVR
Supply-voltage rejection ratio
vs Free-air temperature
11
VOH
High level output current
vs Free-air temperature
12
VOH
High-level output current
vs High-level output current
13
VOL
Low level output voltage
vs Low-level output current
14
VOL
Low-level output voltage
vs Free-air temperature
15
tt
Output transition time
vs Load capacitance
16
Supply current response to an output voltage transition
17
Low-to-high-level output response for various input overdrives
18
High-to-low-level output response for various input overdrives
19
tPLH
Low-to-high-level output response time
vs Supply voltage
20
tPHL
High-to-low-level output response time
vs Supply voltage
21
vs Frequency
22
IDD
Supply current
q
y
vs Supply voltage
23
DD
y
vs Free-air temperature
24
Figure 8
Number of Units
VDD = 5 V
VIC = 2.5 V
TA = 25
C
5
4
3
2
1
0
1
2
3
4
5
VIO Input Offset Voltage mV
DISTRIBUTION OF INPUT
OFFSET VOLTAGE
200
180
160
140
120
100
80
60
40
20
0
698 Units Tested
From 4 Wafer Lots
Figure 9
I
TA Free-Air Temperature
C
IB

Input Bias Current
nA
25
50
75
100
125
10
1
0.1
0.01
0.001
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
VDD = 5 V
VIC = 2.5 V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
CMRR
Common-Mode Rejection Ratio
dB
TA Free-Air Temperature
C
COMMON-MODE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
75
50
25
0
25
50
75
100
125
90
88
86
84
82
80
78
76
74
72
70
VDD = 5 V
Figure 11
75
50
25
0
25
50
75
100
125
k
SVR

Supply V
oltage Rejection Ratio
dB
TA Free-Air Temperature
C
SUPPLY VOLTAGE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
VDD = 5 V to 10 V
90
88
86
84
82
80
78
76
74
72
70
Figure 12
5
TA Free-Air Temperature
C
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
V
OH
High-Level Outout V
oltage
V
VDD = 5 V
IOH = 4 mA
75
50
25
0
25
50
75
100
125
4.9
4.8
4.7
4.6
4.5
4.55
4.65
4.75
4.85
4.95
Figure 13
VDD = 16 V
IOH High-Level Output Current mA
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
TA = 25
C
3 V
4 V
5 V
10 V
0
2.5
5
7.5
10 12.5
15 17.5 20
High-Input Level Output V
oltage
V
VDD
0.25
0.5
0.75
1
1.25
1.5
1.75
2
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
5 V
IOL Low-Level Output Current mA
0
2
4
6
8
10
12
14
16
18
20
V
OL

Low-Level Output V
oltage
V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
3 V
10 V
1.5
1.25
1
0.75
0.5
0.25
0
VDD = 16 V
4 V
TA = 25
C
Figure 15
75
50
25
0
25
50
75
100
125
TA Free-Air Temperature
C
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
V
OL

Low-Level Output V
oltage
mV
400
350
300
250
200
150
100
50
0
VDD = 5 V
IOL = 4 mA
Figure 16
0
200
400
600
800
1000
CL Load Capacitance pF
t t

T
ransition
T
ime
ns
OUTPUT TRANSITION TIME
vs
LOAD CAPACITANCE
250
225
200
175
150
125
100
75
50
25
0
VDD = 5 V
TA = 25
C
Rise Time
Fall Time
Figure 17
I DD

Supply
SUPPLY CURRENT RESPONSE
TO AN OUTPUT VOLTAGE TRANSITION
Current
mA
t Time
Output
V
oltage
V
10
5
0
5
0
VDD = 5 V
CL = 50 pF
f = 10 kHz
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
0
1
2
3
4
5
40 mV
20 mV
10 mV
5 mV
2 mV
V
O

Output
V
oltage
V
Input
V
oltage
mV
Differential
LOW-TO-HIGH-LEVEL OUTPUT RESPONSE
FOR VARIOUS INPUT OVERDRIVES
tPLH Low-to-High-Level Output
Response Time
s
5
0
100
0
VDD = 5 V
TA = 25
C
CL = 50 pF
Figure 19
40 mV
20 mV
10 mV
5 mV
2 mV
HIGH-TO-LOW-LEVEL OUTPUT RESPONSE
FOR VARIOUS INPUT OVERDRIVES
tPHL High-to-Low-Level Output
Response Time
s
V
O

Output
V
oltage
V
Input
V
oltage
mV
Differential
5
0
100
0
0
1
2
3
4
5
VDD = 5 V
TA = 25
C
CL = 50 pF
Figure 20
LOW-TO-HIGH-LEVEL
OUTPUT RESPONSE TIME
vs
SUPPLY VOLTAGE
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VDD Supply Voltage V
t
PLH
Low-to-High-Level
Output Response
s
Overdrive = 2 mV
CL = 50 pF
TA = 25
C
5 mV
10 mV
20 mV
40 mV
Figure 21
HIGH-TO-LOW-LEVEL
OUTPUT RESPONSE TIME
vs
SUPPLY VOLTAGE
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
VDD Supply Voltage V
t
PHL
High-to-Low-Level
Output Response
s
CL = 50 pF
TA = 25
C
5 mV
10 mV
20 mV
40 mV
Overdrive = 2 mV
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
18
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 22
AVERAGE SUPPLY CURRENT
(PER COMPARATOR)
vs
FREQUENCY
10000
1000
100
10
V

A
verage Supply Current
DD
A
0.01
0.1
1
10
100
f Frequency kHz
TA = 25
C
CL = 50 pF
VDD = 16 V
10 V
5 V
4 V
3 V
Figure 23
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
VDD Supply Voltage V
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
TA = 25
C
TA = 125
C
V
Supply Current
DD
A
TA = 55
C
TA = 85
C
TA = 40
C
Outputs Low
No Loads
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
30
25
20
15
10
5
0
75
50
25
0
25
50
75
100
125
TA Free-Air Temperature
C
I DD
Supply Current
A
VDD = 5 V
No Load
Outputs Low
Outputs High
Figure 24
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
The inputs should always remain within the supply rails in order to avoid forward biasing the diodes in the electrostatic
discharge (ESD) protection structure. If either input exceeds this range, the device is not damaged as long as the
input is limited to less than 5 mA. To maintain the expected output state, the inputs must remain within the
common-mode range. For example, at 25
C with V
DD
= 5 V, both inputs must remain between 0.2 V and 4 V to
ensure proper device operation. To ensure reliable operation, the supply should be decoupled with a capacitor
(0.1
F) that is positioned as close to the device as possible.
Output and supply current limitations should be watched carefully since the TLC3704 does not provide current
protection. For example, each output can source or sink a maximum of 20 mA; however, the total current to ground
can only be an absolute maximum of 60 mA. This prohibits sinking 20 mA from each of the four outputs simultaneously
since the total current to ground would be 80 mA.
The TLC3704 has internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested
under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in the degradation of the device parametric performance.
Table of Applications
FIGURE
Pulse-width-modulated motor speed controller
25
Enhanced supply supervisor
26
Two-phase nonoverlapping clock generator
27
Micropower switching regulator
28
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
20
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
C1
0.01
F
(see Note B)
5 V
1/2 TLC3704
Motor Speed Control
Potentiometer
+
+
10 k
100 k
10 k
10 k
See
Note A
1/2 TLC3704
10 k
5 V
DIR
EN
SN75603
Half-H Driver
12 V
Motor
DIR
EN
12 V
Direction
Control
S1
SPDT
5 V
5 V
SN75604
Half-H Driver
NOTES: A. The recommended minimum capacitance is 10
F to eliminate common ground switching noise.
B. Adjust C1 for change in oscillator frequency
Figure 25. Pulse-Width-Modulated Motor Speed Controller
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
21
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
1/2 TLC3704
To
P Interrupt
Early Power Fail
+
+
1 k
3.3 k
CT
(see Note B)
1/2 TLC3704
10 k
5 V
5 V
12-V
Sense
R2
R1
V(UNREG)
(see Note A)
1
F
12 V
RESIN
REF
CT
GND
RESET
SENSE
VCC
To
P
Reset
Monitors 5 VDC Rail
Monitors 12 VDC Rail
Early Power Fail Warning
TL7705A
2.5 V
NOTES: A.
V
(UNREG)
+
2.5
(R1 +R2)
R2
B. The value of CT determines the time delay of reset.
Figure 26. Enhanced Supply Supervisor
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
22
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
+
22 k
C1
0.01
F
(see Note A)
1/2 TLC3704
R1
100 k
(see Note B)
12 V
100 k
1/2 TLC3704
OUT2
+
+
1/2 TLC3704
100 k
100 k
12 V
OUT1
12 V
R2
5 k
(see Note C)
R3
100 k
(see Note B)
OUT2
OUT1
12 V
NOTES: A. Adjust C1 for a change in oscillator frequency where:
1/f = 1.85(100 k
)C1
B. Adjust R1 and R3 to change duty cycle
C. Adjust R2 to change deadtime
Figure 27. Two-Phase Nonoverlapping Clock Generator
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
23
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
+
100 k
C1
180
F
(see Note A)
1/2 TLC3704
100 k
R2
100 k
100 k
100 k
VI
VI
+
1/2 TLC3704
VI
+
TLC271
(see Note B)
270 k
VI
100 k
C2
100 pF
100 k
R = 6
L = 1 mH
(see Note D)
RL
470
F
VO
R1
V
I
+
6 V to 16 V
I
L
+
0.01 mA to 0.25 mA
V
O
+
2.5
(R1
)
R2)
R2
LM385
2.5 V
47
F
Tantalum
IN5818
VI
G
S
SK9504
(see Note C)
D
+
NOTES: A. Adjust C1 for a change in oscillator frequency
B. TLC271 Tie pin 8 to pin 7 for low bias operation
C. SK9504 VDS = 40 V
IDS = 1 A
will
D. To achieve microampere current drive, the inductance of the circuit must be increased.
Figure 28. Micropower Switching Regulator
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
24
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
8 PINS SHOWN
8
0.197
(5,00)
A MAX
A MIN
(4,80)
0.189
0.337
(8,55)
(8,75)
0.344
14
0.386
(9,80)
(10,00)
0.394
16
DIM
PINS **
4040047/E 09/01
0.069 (1,75) MAX
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.010 (0,25)
0.016 (0,40)
0.044 (1,12)
0.244 (6,20)
0.228 (5,80)
0.020 (0,51)
0.014 (0,35)
1
4
8
5
0.150 (3,81)
0.157 (4,00)
0.008 (0,20) NOM
0
8
Gage Plane
A
0.004 (0,10)
0.010 (0,25)
0.050 (1,27)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
25
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
FK (S-CQCC-N**)
LEADLESS CERAMIC CHIP CARRIER
4040140 / C 11/95
28 TERMINALS SHOWN
B
0.358
(9,09)
MAX
(11,63)
0.560
(14,22)
0.560
0.458
0.858
(21,8)
1.063
(27,0)
(14,22)
A
NO. OF
MIN
MAX
0.358
0.660
0.761
0.458
0.342
(8,69)
MIN
(11,23)
(16,26)
0.640
0.740
0.442
(9,09)
(11,63)
(16,76)
0.962
1.165
(23,83)
0.938
(28,99)
1.141
(24,43)
(29,59)
(19,32)
(18,78)
**
20
28
52
44
68
84
0.020 (0,51)
TERMINALS
0.080 (2,03)
0.064 (1,63)
(7,80)
0.307
(10,31)
0.406
(12,58)
0.495
(12,58)
0.495
(21,6)
0.850
(26,6)
1.047
0.045 (1,14)
0.045 (1,14)
0.035 (0,89)
0.035 (0,89)
0.010 (0,25)
12
13
14
15
16
18
17
11
10
8
9
7
5
4
3
2
0.020 (0,51)
0.010 (0,25)
6
1
28
26
27
19
21
B SQ
A SQ
22
23
24
25
20
0.055 (1,40)
0.045 (1,14)
0.028 (0,71)
0.022 (0,54)
0.050 (1,27)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. This package can be hermetically sealed with a metal lid.
D. The terminals are gold-plated.
E. Falls within JEDEC MS-004
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
26
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
J (R-GDIP-T**)
CERAMIC DUAL-IN-LINE
1
20
0.290
(7,87)
0.310
0.975
(24,77)
(23,62)
0.930
(7,37)
0.245
(6,22)
(7,62)
0.300
16
14
PINS **
0.290
(7,87)
0.310
0.785
(19,94)
(19,18)
0.755
(7,37)
0.310
(7,87)
(7,37)
0.290
0.755
(19,18)
(19,94)
0.785
0.245
(6,22)
(7,62)
0.300
A
0.300
(7,62)
(6,22)
0.245
A MIN
A MAX
B MAX
B MIN
C MIN
C MAX
DIM
0
15
Seating Plane
0.014 (0,36)
0.008 (0,20)
4040083/E 03/99
C
8
7
0.020 (0,51) MIN
B
0.070 (1,78)
0.100 (2,54)
0.065 (1,65)
0.045 (1,14)
14 LEADS SHOWN
14
0.015 (0,38)
0.023 (0,58)
0.100 (2,54)
0.200 (5,08) MAX
0.130 (3,30) MIN
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. This package is hermetically sealed with a ceramic lid using glass frit.
D. Index point is provided on cap for terminal identification.
E. Falls within MIL STD 1835 GDIP1-T14, GDIP1-T16, and GDIP1-T20
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
27
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
N (R-PDIP-T**)
PLASTIC DUAL-IN-LINE PACKAGE
0.325 (8,26)
0.300 (7,62)
0.010 (0,25) NOM
Gauge Plane
0.015 (0,38)
0.430 (10,92) MAX
20
0.975
(24,77)
0.940
(23,88)
18
0.920
0.850
14
0.775
0.745
(19,69)
(18,92)
16
0.775
(19,69)
(18,92)
0.745
A MIN
DIM
A MAX
PINS **
(23,37)
(21,59)
Seating Plane
14/18 PIN ONLY
4040049/D 02/00
9
8
0.070 (1,78) MAX
A
0.035 (0,89) MAX
0.020 (0,51) MIN
16
1
0.015 (0,38)
0.021 (0,53)
0.200 (5,08) MAX
0.125 (3,18) MIN
0.240 (6,10)
0.260 (6,60)
M
0.010 (0,25)
0.100 (2,54)
16 PINS SHOWN
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001 (20-pin package is shorter than MS-001).
TLC3704, TLC3704Q
QUAD MICROPOWER LinCMOS
VOLTAGE COMPARATORS
SLCS117B NOVEMBER 1986 REVISED JANUARY 2002
28
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
MECHANICAL DATA
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,65
M
0,10
0,10
0,25
0,50
0,75
0,15 NOM
Gage Plane
28
9,80
9,60
24
7,90
7,70
20
16
6,60
6,40
4040064/F 01/97
0,30
6,60
6,20
8
0,19
4,30
4,50
7
0,15
14
A
1
1,20 MAX
14
5,10
4,90
8
3,10
2,90
A MAX
A MIN
DIM
PINS **
0,05
4,90
5,10
Seating Plane
0
8
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-153
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
(2)
Lead/Ball Finish
MSL Peak Temp
(3)
5962-9096901M2A
ACTIVE
LCCC
FK
20
1
None
POST-PLATE
Level-NC-NC-NC
5962-9096901MCA
ACTIVE
CDIP
J
14
1
None
A42 SNPB
Level-NC-NC-NC
TLC3704CD
ACTIVE
SOIC
D
14
50
Pb-Free
(RoHS)
CU NIPDAU
Level-2-260C-1YEAR/
Level-1-220C-UNLIM
TLC3704CDR
ACTIVE
SOIC
D
14
2500
Pb-Free
(RoHS)
CU NIPDAU
Level-2-260C-1YEAR/
Level-1-220C-UNLIM
TLC3704CN
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
Level-NC-NC-NC
TLC3704CNSR
ACTIVE
SO
NS
14
2000
Pb-Free
(RoHS)
CU NIPDAU
Level-2-260C-1YEAR/
Level-1-220C-UNLIM
TLC3704CPW
ACTIVE
TSSOP
PW
14
90
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704CPWLE
OBSOLETE
TSSOP
PW
14
None
Call TI
Call TI
TLC3704CPWR
ACTIVE
TSSOP
PW
14
2000
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704ID
ACTIVE
SOIC
D
14
50
Pb-Free
(RoHS)
CU NIPDAU
Level-2-260C-1YEAR/
Level-1-220C-UNLIM
TLC3704IDR
ACTIVE
SOIC
D
14
2500
Pb-Free
(RoHS)
CU NIPDAU
Level-2-260C-1YEAR/
Level-1-220C-UNLIM
TLC3704IN
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
Level-NC-NC-NC
TLC3704IPW
ACTIVE
TSSOP
PW
14
90
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704IPWR
ACTIVE
TSSOP
PW
14
2000
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704MD
ACTIVE
SOIC
D
14
50
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704MDR
ACTIVE
SOIC
D
14
2500
None
CU NIPDAU
Level-1-220C-UNLIM
TLC3704MFKB
ACTIVE
LCCC
FK
20
1
None
POST-PLATE
Level-NC-NC-NC
TLC3704MJ
ACTIVE
CDIP
J
14
1
None
A42 SNPB
Level-NC-NC-NC
TLC3704MJB
ACTIVE
CDIP
J
14
1
None
A42 SNPB
Level-NC-NC-NC
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check
http://www.ti.com/productcontent
for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
PACKAGE OPTION ADDENDUM
www.ti.com
22-Feb-2005
Addendum-Page 1
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com
22-Feb-2005
Addendum-Page 2
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amplifier.ti.com
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2005, Texas Instruments Incorporated