TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B FEBRUARY 1997 REVISED JANUARY 2002
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Supply Current . . . 300
A Max
D
High Unity-Gain Bandwidth . . . 2 MHz Typ
D
High Slew Rate . . . 0.45 V/
s Min
D
Supply-Current Change Over Military Temp
Range . . . 10
A Typ at V
CC
=
15 V
D
Specified for Both 5-V Single-Supply and
15-V Operation
D
Phase-Reversal Protection
D
High Open-Loop Gain . . . 6.5 V/
V
(136 dB) Typ
D
Low Offset Voltage . . . 100
V Max
D
Offset Voltage Drift With Time
0.005
V/mo Typ
D
Low Input Bias Current . . . 50 nA Max
D
Low Noise Voltage . . . 19 nV/
Hz Typ
description
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with
highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic
improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both
time and temperature. This means that a precision device remains a precision device even with changes in
temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply
rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems
applications.
The C-suffix devices are characterized for operation from 0
C to 70
C. The I-suffix devices are characterized
for operation from 40
C to 85
C. The M-suffix devices are characterized for operation over the full military
temperature range of 55
C to 125
C.
Copyright
2002, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B FEBRUARY 1997 REVISED JANUARY 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2021 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
SSOP
(DB)
CHIP
CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
0
C to
200
V
TLE2021ACD
TLE2021CDBLE
TLE2021ACP
--
--
70
C
500
V
TLE2021CD
TLE2021CDBLE
--
--
TLE2021CP
TLE2021CPWLE
TLE2021Y
40
C
to
200
V
TLE2021AID
TLE2021AIP
to
85
C
500
V
TLE2021ID
--
--
--
TLE2021AIP
TLE2021IP
--
--
55
C
100
V
--
TLE2021BMFK
TLE2021BMJG
--
to
200
V
TLE2021AMD
--
TLE2021AMFK
TLE2021AMJG
TLE2021AMP
--
--
125
C
500
V
TLE2021MD
TLE2021MFK
TLE2021MJG
TLE2021MP
The D packages are available taped and reeled. To order a taped and reeled part, add the suffix R (e.g., TLE2021CDR).
The DB and PW packages are only available left-end taped and reeled.
Chip forms are tested at 25
C only.
TLE2022 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
SSOP
(DB)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
0
C
to
150
V
300
V
TLE2022BCD
TLE2022ACD
--
--
TLE2022ACP
--
--
--
--
to
70
C
300
V
500
V
TLE2022ACD
TLE2022CD
--
TLE2022CDBLE
--
--
TLE2022ACP
TLE2022CP
--
TLE2022CPWLE
--
TLE2022Y
40
C
to
150
V
300
V
TLE2022BID
TLE2022AID
--
TLE2022AIP
to
85
C
300
V
500
V
TLE2022AID
TLE2022ID
--
--
--
TLE2022AIP
TLE2022IP
--
--
55
C
150
V
--
--
TLE2022BMJG
--
55 C
to
150
V
300
V
TLE2022AMD
--
TLE2022AMFK
TLE2022BMJG
TLE2022AMJG
TLE2022AMP
--
--
125
C
500
V
TLE2022MD
TLE2022MFK
TLE2022MJG
TLE2022MP
The D packages are available taped and reeled. To order a taped and reeled part, add the suffix R (e.g., TLE2022CDR).
The DB and PW packages are only available left-end taped and reeled.
Chip forms are tested at 25
C only.
TLE2024 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(DW)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
CHIP
FORM
(Y)
500
V
TLE2024BCDW
TLE2024BCN
--
0
C to 70
C
500
V
750
V
TLE2024BCDW
TLE2024ACDW
--
--
TLE2024BCN
TLE2024ACN
--
1000
V
TLE2024CDW
TLE2024CN
TLE2024Y
500
V
TLE2024BIDW
TLE2024BIN
40
C to 85
C
500
V
750
V
TLE2024BIDW
TLE2024AIDW
--
--
TLE2024BIN
TLE2024AIN
--
1000
V
TLE2024IDW
TLE2024IN
500
V
TLE2024BMDW
TLE2024BMFK
TLE2024BMJ
TLE2024BMN
55
C to 125
C
750
V
TLE2024AMDW
TLE2024AMFK
TLE2024AMJ
TLE2024AMN
--
1000
V
TLE2024MDW
TLE2024MFK
TLE2024MJ
TLE2024MN
Chip forms are tested at 25
C only.
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B FEBRUARY 1997 REVISED JANUARY 2002
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
1
2
3
4
8
7
6
5
OFFSET N1
IN
IN+
V
CC
/GND
NC
V
CC+
OUT
OFFSET N2
NC No internal connection
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
V
CC+
NC
OUT
NC
NC
IN
NC
IN+
NC
TLE2021
FK PACKAGE
(TOP VIEW)
NC
OFFSET
N1
NC
NC
NC
NC
GND
NC
OFFSET
N2
NC
CC
V/
TLE2021
D, DB, JG, P, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN
1IN+
V
CC
/GND
V
CC+
2OUT
2IN
2IN+
D, DB, JG, P, OR PW PACKAGE
(TOP VIEW)
NC No internal connection
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
2OUT
NC
2IN
NC
NC
1IN
NC
1IN +
NC
FK PACKAGE
(TOP VIEW)
NC
1OUT
NC
NC
NC
NC
GND
NC
2IN +
CC
V/
CC
+
V
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B FEBRUARY 1997 REVISED JANUARY 2002
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
NC
4OUT
4IN
4IN +
V
CC
/GND
3IN +
3IN
3OUT
NC
DW PACKAGE
(TOP VIEW)
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
4IN +
NC
V
CC
/GND
NC
3IN +
1IN +
NC
V
CC +
NC
2IN +
1IN
1OUT
NC
3OUT
3IN
4OUT
4IN
2IN
2OUT
NC
NC No internal connection
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
4OUT
4IN
4IN +
V
CC
/GND
3IN +
3IN
3OUT
FK PACKAGE
(TOP VIEW)
J OR N PACKAGE
(TOP VIEW)
TLE2021Y chip information
This chip, when properly assembled, display characteristics similar to the TLE2021. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
4 MILS MINIMUM
TJmax= 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN +
IN
VCC+
(7)
(3)
(2)
(6)
(4)
VCC /GND
(1)
(5)
OFFSET N1
OFFSET N2
78
54
(1)
(2)
(3)
(4)
(5)
(6)
(7)
TLE202x, TLE202xA, TLE202xB, TLE202xY
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS191B FEBRUARY 1997 REVISED JANUARY 2002
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2022Y chip information
This chip, when properly assembled, displays characteristics similar to TLE2022. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
4 MILS MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
OUT
IN +
IN
VCC+
(8)
(6)
(3)
(2)
(5)
(1)
+
(7)
IN +
IN
OUT
(4)
VCC
80
86
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
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