TLE207x, TLE207xA, TLE207xY
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181A FEBRUARY 1997 REVISED MARCH 2000
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Direct Upgrades to TL05x, TL07x, and
TL08x BiFET Operational Amplifiers
D
Greater Than 2
Bandwidth (10 MHz) and
3
Slew Rate (45 V/
s) Than TL07x
D
Ensured Maximum Noise Floor
17 nV/
Hz
D
On-Chip Offset Voltage Trimming for
Improved DC Performance
D
Wider Supply Rails Increase Dynamic
Signal Range to
19 V
description
The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew
rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process
yields a typical noise floor of 11.6 nV/
Hz, 17-nV/
Hz ensured maximum, offering immediate improvement in
noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing
the dynamic signal range for BiFET circuits to
19 V. On-chip zener trimming of offset voltage yields precision
grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower
performance BiFET operational amplifiers for ease in improving performance in existing designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with
high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than
bipolar or CMOS devices having comparable power consumption.
The TLE207x family of BiFET amplifiers are Texas Instruments highest performance BiFETs, with tighter input
offset voltage and ensured maximum noise specifications. Designers requiring less stringent specifications but
seeking the improved ac characteristics of the TLE207x should consider the TLE208x operational amplifier
family.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to
observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing
of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas
Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single
supplies.
The TLE207x are fully specified at
15 V and
5 V. For operation in low-voltage and/or single-supply systems,
Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended. When
moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth
requirements and output loading.
Copyright
2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TLE207x, TLE207xA, TLE207xY
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181A FEBRUARY 1997 REVISED MARCH 2000
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2071 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
CHIP FORM
(Y)
0
C to 70
C
2 mV
TLE2071ACD
TLE2071ACP
--
0
C to 70
C
4 mV
TLE2071CD
--
--
TLE2071CP
TLE2071Y
40
C to 85
C
2 mV
TLE2071AID
TLE2071AIP
40
C to 85
C
4 mV
TLE2071ID
--
--
TLE2071IP
--
55
C to 125
C
2 mV
--
TLE2071AMFK
TLE2071AMJG
--
55
C to 125
C
4 mV
--
TLE2071MFK
TLE2071MJG
--
--
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2071ACDR).
Chip-form versions are tested at TA = 25
C.
TLE2072 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
CHIP
FORM
(Y)
0
C to 70
C
3.5 mV
TLE2072ACD
TLE2072ACP
--
0
C to 70
C
6 mV
TLE2072CD
--
--
TLE2072CP
TLE2072Y
40
C to 85
C
3.5 mV
TLE2072AID
TLE2072AIP
40
C to 85
C
6 mV
TLE2072ID
--
--
TLE2072IP
--
55
C to 125
C
3.5 mV
TLE2072AMFK
TLE2072AMJG
55
C to 125
C
6 mV
--
TLE2072MFK
TLE2072MJG
--
--
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2072ACDR).
Chip-form versions are tested at TA = 25
C.
TLE2074 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(DW)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
CHIP
FORM
(Y)
0
C to 70
C
3 mV
TLE2074ACDW
TLE2074ACN
--
0
C to 70
C
5 mV
TLE2074CDW
--
--
TLE2074CN
TLE2074Y
40
C to 85
C
3 mV
TLE2074AIDW
TLE2074AIN
40
C to 85
C
5 mV
TLE2074IDW
--
--
TLE2074IN
--
55
C to 125
C
3 mV
TLE2074AMFK
TLE2074AMJ
55
C to 125
C
5 mV
--
TLE2074MFK
TLE2074MJ
--
--
The DW packages are available taped and reeled. Add R suffix to device type (e.g., TLE2074ACDWR).
Chip-form versions are tested at TA = 25
C.
TLE207x, TLE207xA, TLE207xY
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181A FEBRUARY 1997 REVISED MARCH 2000
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
1
2
3
4
8
7
6
5
OFFSET N1
IN
IN +
V
CC
NC
V
CC +
OUT
OFFSET N2
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
V
CC +
NC
OUT
NC
NC
IN
NC
IN +
NC
NC
OFFSET
N1
NC
NC
NC
NC
V
NC
OFFSET
N2
NC
CC
NC No internal connection
TLE2071 AND TLE2071A
D, JG, OR P PACKAGE
(TOP VIEW)
TLE2071M AND TLE2071AM
FK PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
CC
V
CC +
2OUT
2IN
2IN+
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
2OUT
NC
2IN
NC
NC
1IN
NC
1IN+
NC
NC
1OUT
NC
NC
NC
NC
V
NC
2IN+
CC
V
CC +
TLE2072 AND TLE2072A
D, JG, OR P PACKAGE
(TOP VIEW)
TLE2072M AND TLE2072AM
FK PACKAGE
(TOP VIEW)
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
4IN+
NC
V
CC
NC
3IN+
1IN+
NC
V
CC +
NC
2IN+
1IN
1OUT
NC
3IN
4IN
2IN
NC
3OUT
2OUT
4OUT
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
NC
4OUT
4IN
4IN +
V
CC
3IN +
3IN
3OUT
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
4OUT
4IN
4IN +
V
CC
3IN +
3IN
3OUT
TLE2074 AND TLE2074A
DW PACKAGE
(TOP VIEW)
TLE2074 AND TLE2074A
J OR N PACKAGE
(TOP VIEW)
TLE2074M AND TLE2074AM
FK PACKAGE
(TOP VIEW)
symbol
+
OUT
IN +
IN
TLE207x, TLE207xA, TLE207xY
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181A FEBRUARY 1997 REVISED MARCH 2000
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2071Y chip information
This chip, when properly assembled, displays characteristics similar to the TLE2071C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF THE CHIP.
+
OUT
IN +
IN
VCC +
(6)
(3)
(2)
(5)
(1)
(7)
(4)
OFFSET N1
OFFSET N2
VCC
58
85
(1)
(2)
(4)
(5)
(6)
(7)
(8)
(3)
TLE207x, TLE207xA, TLE207xY
EXCALIBUR LOW-NOISE HIGH-SPEED
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS181A FEBRUARY 1997 REVISED MARCH 2000
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2072Y chip information
This chip, when properly assembled, displays characteristics similar to the TLE2072C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF THE CHIP.
+
1OUT
1IN +
1IN
VCC+
(4)
(6)
(3)
(2)
(5)
(1)
(7)
(8)
+
2OUT
2IN +
2IN
VCC
80
90
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
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