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Электронный компонент: TLE2081AC

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TLE208x, TLE208xA, TLE208xY
EXCALIBUR HIGH-SPEED JFET-INPUT
OPERATIONAL AMPLIFIERS
SLOS182B FEBRUARY 1997 REVISED JUNE 2001
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Direct Upgrades to TL05x, TL07x, and
TL08x BiFET Operational Amplifiers
D
Greater Than 2
Bandwidth (10 MHz) and
3
Slew Rate (45 V/
s) Than TL08x
D
On-Chip Offset Voltage Trimming for
Improved DC Performance
D
Wider Supply Rails Increase Dynamic
Signal Range to
19 V
description
The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew
rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider
supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to
19 V. On-chip zener trimming
of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are
pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in
existing designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without
sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for
interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac
response than bipolar or CMOS devices having comparable power consumption.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to
observe common-mode input-voltage limits and output voltage swing when operating from a single supply. DC
biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply.
Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from
single supplies.
The TLE208x are fully specified at
15 V and
5 V. For operation in low-voltage and/or single-supply systems,
Texas Instruments LinCMOS
families of operational amplifiers (TLC- and TLV-prefix) are recommended.
When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth
requirements and output loading.
For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response as
the TLE208x with more stringent dc and noise specifications.
Copyright
2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments.
TLE208x, TLE208xA, TLE208xY
EXCALIBUR HIGH-SPEED JFET-INPUT
OPERATIONAL AMPLIFIERS
SLOS182B FEBRUARY 1997 REVISED JUNE 2001
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2081 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
CHIP
FORM
(Y)
0
C to 70
C
3 mV
TLE2081ACD
TLE2081ACP
--
0
C to 70
C
6 mV
TLE2081CD
--
--
TLE2081CP
TLE2081Y
40
C to 85
C
3 mV
TLE2081AID
TLE2081AIP
40
C to 85
C
6 mV
TLE2081ID
--
--
TLE2081IP
--
55
C to 125
C
3 mV
TLE2081AMFK
TLE2081AMJG
55
C to 125
C
6 mV
--
TLE2081MFK
TLE2081MJG
--
--
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2081ACDR).
Chip forms are tested at TA = 25
C only.
TLE2082 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
CHIP FORM
(Y)
0
C to 70
C
4 mV
TLE2082ACD
TLE2082ACP
0
C to 70
C
7 mV
TLE2082CD
--
--
TLE2082CP
--
40
C to 85
C
4 mV
TLE2082AID
TLE2082AIP
TLE2082Y
40
C to 85
C
7 mV
TLE2082ID
--
--
TLE2082IP
TLE2082Y
55
C to 125
C
4 mV
TLE2082AMD
TLE2082AMFK
TLE2082AMJG
TLE2082AMP
55
C to 125
C
7 mV
TLE2082MD
TLE2082MFK
TLE2082MJG
TLE2082MP
--
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2082ACDR).
Chip forms are tested at TA = 25
C only.
TLE2084 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
C
SMALL
OUTLINE
(DW)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
CHIP
FORM
(Y)
0
C to 70
C
4 mV
TLE2084ACDW
TLE2084ACN
--
0
C to 70
C
7 mV
TLE2084CDW
--
--
TLE2084CN
TLE2084Y
55
C to 125
C
4 mV
TLE2084AMFK
TLE2084AMJ
55
C to 125
C
7 mV
--
TLE2084MFK
TLE2084MJ
--
--
The DW packages are available taped and reeled. Add R suffix to device type (e.g., TLE2084ACDWR).
Chip forms are tested at TA = 25
C only.
TLE208x, TLE208xA, TLE208xY
EXCALIBUR HIGH-SPEED JFET-INPUT
OPERATIONAL AMPLIFIERS
SLOS182B FEBRUARY 1997 REVISED JUNE 2001
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
1
2
3
4
8
7
6
5
OFFSET N1
IN
IN +
V
CC
NC
V
CC +
OUT
OFFSET N2
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
V
CC +
NC
OUT
NC
NC
IN
NC
IN +
NC
NC
OFFSET
N1
NC
NC
NC
NC
V
NC
OFFSET
N2
NC
CC
TLE2081
D, JG, OR P PACKAGE
(TOP VIEW)
TLE2081
FK PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
CC
V
CC+
2OUT
2IN
2IN+
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC
2OUT
NC
2IN
NC
NC
1IN
NC
1IN+
NC
NC
1OUT
NC
NC
NC
NC
V
NC
2IN +
CC
V
CC +
TLE2082
D, JG, OR P PACKAGE
(TOP VIEW)
TLE2082
FK PACKAGE
(TOP VIEW)
3
2
1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
4IN +
NC
V
CC
NC
3IN +
1IN+
NC
V
CC+
NC
2IN+
TLE2084
FK PACKAGE
(TOP VIEW)
1IN
1OUT
NC
3IN
4IN
2 IN
NC
3OUT
2OUT
4OUT
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
NC
4OUT
4IN
4IN +
V
CC
3IN +
3IN
3OUT
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN +
V
CC +
2IN +
2IN
2OUT
4OUT
4IN
4IN +
V
CC
3IN +
3IN
3OUT
TLE2084
J OR N PACKAGE
(TOP VIEW)
TLE2084
DW PACKAGE
(TOP VIEW)
NC No internal connection
symbol
+
OUT
IN +
IN
TLE208x, TLE208xA, TLE208xY
EXCALIBUR HIGH-SPEED JFET-INPUT
OPERATIONAL AMPLIFIERS
SLOS182B FEBRUARY 1997 REVISED JUNE 2001
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2081Y chip information
This chip, when properly assembled, displays characteristics similar to the TLE2081. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF THE CHIP.
+
OUT
IN +
IN
VCC+
(6)
(3)
(2)
(5)
(1)
(7)
(4)
OFFSET N1
OFFSET N2
VCC
58
85
(1)
(2)
(4)
(5)
(6)
(7)
(8)
(3)
TLE208x, TLE208xA, TLE208xY
EXCALIBUR HIGH-SPEED JFET-INPUT
OPERATIONAL AMPLIFIERS
SLOS182B FEBRUARY 1997 REVISED JUNE 2001
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLE2082Y chip information
This chip, when properly assembled, displays characteristics similar to the TLE2082. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
4 MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF THE CHIP.
+
1OUT
1IN +
1IN
VCC+
(4)
(6)
(3)
(2)
(5)
(1)
(7)
(8)
+
2OUT
2IN +
2IN
VCC
80
90
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)