TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
TM
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 FEBRUARY 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
T
A
= 40
C to 85
C . . . 2 V to 8 V
D
Fully Characterized at 3 V and 5 V
D
Single-Supply Operation
D
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V
DD
1 V at T
A
= 25
C
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance . . . 10
12
Typ
D
ESD-Protection Circuitry
D
Designed-In Latch-Up Immunity
description
The TLV233x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
Unlike the TLV2322 which is optimized for
ultra-low power, the TLV233x is designed to
provide a combination of low power and good ac
performance. Each amplifier is fully functional
down to a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode
input-voltage range includes the negative rail and
extends to within 1 V of the positive rail.
Having a maximum supply current of only 310
A
per amplifier over full temperature range, the
TLV233x devices offer a combination of good ac
performance and microampere supply currents.
From a 3-V power supply, the amplifier's typical
slew rate is 0.38 V/
s and its bandwidth is
300 kHz.
AVAILABLE OPTIONS
VIOmax
PACKAGED DEVICES
CHIP FORM
TA
VIOmax
AT 25
C
SMALL OUTLINE
(D)
PLASTIC DIP
(N)
PLASTIC DIP
(P)
TSSOP
(PW)
CHIP FORM
(Y)
40
C to 85
C
9 mV
TLV2332ID
--
TLV2332IP
TLV2332IPWLE
TLV2332Y
40
C to 85
C
10 mV
TLV2334ID
TLV2334IN
--
TLV2334IPWLE
TLV2334Y
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2332IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE).
Chip forms are tested at 25
C only.
Copyright
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
DD
/ GND
V
DD
2OUT
2IN
2IN +
1
2
3
4
8
7
6
5
1OUT
1IN
1IN +
V
DD
/ GND
V
DD +
2OUT
2IN
2IN +
TLV2332
D OR P PACKAGE
(TOP VIEW)
TLV2332
PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN
1IN +
V
DD +
2IN +
2N
2OUT
4OUT
4IN
4IN +
V
DD / GND
3IN +
3IN
3OUT
4OUT
4IN
4IN +
V
DD / GND
3IN +
3IN
3OUT
1OUT
1IN
1IN +
V
DD +
2IN +
2IN
2OUT
1
7
8
14
TLV2334
D OR N PACKAGE
(TOP VIEW)
TLV2334
PW PACKAGE
(TOP VIEW)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
TM
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 FEBRUARY 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
These amplifiers offer a level of ac performance greater than that of many other devices operating at
comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current
or battery-powered applications.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS
TM
technology. The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.
To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand 100-mA currents without sustaining latch-up. The
TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2332Y chip information
This chip, when properly assembled, display characteristics similar to the TLV2332. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
4 MILS MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
1OUT
1IN +
1IN
VDD
VDD / GND
(8)
(6)
(3)
(2)
(5)
(1)
+
(7)
2IN +
2IN
2OUT
(4)
59
72
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
TM
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 FEBRUARY 1997
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV2334Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2334. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
+
1OUT
1IN +
1IN
VDD
(4)
(6)
(3)
(2)
(5)
(1)
2IN +
2IN
2OUT
(11)
VDD /GND
+
3OUT
3IN +
3IN
(13)
(10)
(9)
(12)
(8)
+
(14)
4OUT
4IN +
4IN
+
(7)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4
4 MILS MINIMUM
TJmax = 150
C
TOLERANCES ARE
10%.
ALL DIMENSIONS ARE IN MILS.
68
108
(1)
(2)
(3)
(4) (5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
(13)
(14)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
TM
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 FEBRUARY 1997
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
P1
P4
P5
P6
N3
N5
OUT
R6
VDD
P3
P2
IN
IN +
R1
R2
R5
C1
R3
D1
R4
N1
N2
D2
GND
N4
N6
R7
N7
ACTUAL DEVICE COMPONENT COUNT
COMPONENT
TLV2332
TLV2334
Transistors
54
108
Resistors
14
28
Diodes
4
8
Capacitors
2
4
Includes both amplifiers and all ESD, bias, and trim
circuitry.
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS
TM
LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 FEBRUARY 1997
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input)
0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
5
mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) T
A
= 25
C (see Note 3)
unlimited
. . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
40
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at the noninverting input with respect to the inverting input.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
DERATING FACTOR
TA = 85
C
PACKAGE
A
POWER RATING
ABOVE TA = 25
C
A
POWER RATING
D8
725 mW
5.8 mW/
C
377 mW
D14
950 mW
7.6 mW/
C
494 mW
N
1575 mW
12.6 mW/
C
819 mW
P
1000 mW
8.0 mW/
C
520 mW
PW8
525 mW
4.2 mW/
C
273 mW
PW14
700 mW
5.6 mW/
C
364 mW
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VDD
2
8
V
Common mode input voltage VIC
VDD = 3 V
0.2
1.8
V
Common-mode input voltage, VIC
VDD = 5 V
0.2
3.8
V
Operating free-air temperature, TA
40
85
C
PDF 
ZIP