TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B FEBRUARY 1997 REVISED OCTOBER 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
Low Supply-Voltage
Operation . . . V
CC
=
1 V Min
D
Wide Bandwidth . . . 7 MHz Typ at
V
CC
=
2.5 V
D
High Slew Rate . . . 3 V/
s Typ at
V
CC
=
2.5 V
D
Wide Output Voltage Swing . . .
2.4 V Typ
at V
CC
=
2.5 V, R
L
= 10 k
D
Low Noise . . . 8 nV/
Hz Typ at f = 1 kHz
D
Package Options Include SOT-23 (DBV)
Package for the TLV2361 and Plastic
Small-Outline (D), Thin Shrink
Small-Outline (PW), and Dual-In-Line (P)
Packages for the TLV2362
description
The TLV236x devices are high-performance dual operational amplifiers built using an original Texas
Instruments bipolar process. These devices can be operated at a very low supply voltage (
1 V), while
maintaining a wide output swing. The TLV236x devices offer a dramatically improved dynamic range of signal
conditioning in low-voltage systems. The TLV236x devices also provide higher performance than other
general-purpose operational amplifiers by combining higher unity-gain bandwidth and faster slew rate. With
their low distortion and low-noise performance, these devices are well suited for audio applications.
The C-suffix devices are characterized for operation from 0
C to 70
C and the I-suffix devices are characterized
for operation from 40
C to 85
C.
TLV2361 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
SOT-23
(DBV)
SYMBOL
CHIP
FORM
(Y)
0
C to 70
C
TLV2361CDBV
VAAC
TLV2361Y
40
C to 85
C
TLV2361IDBV
VAAI
The DBV packages are only available taped and reeled.
Chip forms are specified for operation at 25
C only.
TLV2362 AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
20
C to 85
C
TLV2362ID
TLV2362IP
TLV2362IPWR
TLV2362Y
Chip forms are specified for operation at 25
C only.
The D packages are available taped and reeled. Add an R to the package suffix (e.g., TLV2362IDR).
The PW packages are available left-ended taped and reeled only, (e.g., TLV2362IPWR).
Copyright
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
5
4
1
2
3
V
CC
+
OUT
IN+
V
CC
IN
1
2
3
4
8
7
6
5
1OUT
1IN
1IN+
V
CC
V
CC
+
2OUT
2IN
2IN+
TLV2361 . . . DBV PACKAGE
(TOP VIEW)
TLV2362 . . . D, P, OR PW PACKAGE
(TOP VIEW)
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B FEBRUARY 1997 REVISED OCTOBER 1998
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
VCC
IN
IN+
VCC+
OUT
ACTUAL DEVICE COMPONENT COUNT
COMPONENT
TLV2361
TLV2362
Transistors
30
46
Resistors
6
11
Diodes
1
1
Capacitors
2
4
JFET
1
1
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B FEBRUARY 1997 REVISED OCTOBER 1998
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV2361Y chip information
This chip, when properly assembled, has characteristics similar to the TLV2361. Thermal compression or
ultrasonic bonding can be used on the doped-aluminum bonding pads. This chip can be mounted with
conductive epoxy or a gold-silicon preform.
Bonding-Pad Assignments
Chip Thickness: 15 Mils Typical
Bonding Pads: 4
4 Mils Minimum
TJ(max) = 150
C
Tolerances Are
10%.
All Dimensions Are in Mils.
Pin (2) is Connected Internally to Backside of Chip.
OUT
IN+
IN
VCC+
VCC
39
39
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(4)
(5)
(3)
(2)
(1)
+
(1)
(3)
(4)
(2)
(5)
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B FEBRUARY 1997 REVISED OCTOBER 1998
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV2362Y chip information
This chip, when properly assembled, has characteristics similar to the TLV2362. Thermal compression or
ultrasonic bonding can be used on the doped-aluminum bonding pads. Chips can be mounted with conductive
epoxy or a gold-silicon preform.
Bonding-Pad Assignments
39
39
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
1OUT
1IN+
1IN
VCC+
VCC
+
(3)
(2)
(1)
(4)
(8)
2OUT
2IN+
2IN
+
(5)
(6)
(7)
Chip Thickness: 15 Mils Typical
Bonding Pads: 4
4 Mils Minimum
TJ(max) = 150
C
Tolerances Are
10%.
All Dimensions Are in Mils.
Pin (4) is Connected Internally to Backside of Chip.
TLV2361, TLV2361Y, TLV2362, TLV2362Y
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS
SLOS195B FEBRUARY 1997 REVISED OCTOBER 1998
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
CC
+ (see Note 1)
3.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage, V
CC
(see Note 1)
3.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2)
3.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
(any input) (see Notes 1 and 3)
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage, V
O
3.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25
C (output shorted to GND)
Unlimited
. . . . . . . . . . . . . . . . . . .
Package thermal impedance,
JA
(see Note 4): D package
197
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DBV package
347
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P package
104
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PW package
243
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC.
2. Differential voltages are at IN+ with respect to IN.
3. All input voltage values must not exceed VCC.
4. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.
recommended operating conditions
C SUFFIX
I SUFFIX
UNIT
MIN
MAX
MIN
MAX
UNIT
Supply voltage, VCC
1
2.5
1
2.5
V
Operating free-air temperature, TA
0
70
40
85
C
PDF 
ZIP