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Электронный компонент: TLV5510INS

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TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C DECEMBER 1997 REVISED DECEMBER 1999
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D
8-Bit Resolution
D
Integral Linearity Error
0.75 LSB Max (25
C)
1 LSB Max ( 35
C to 85
C)
D
Differential Linearity Error
0.5 LSB (25
C)
0.75 LSB Max ( 35
C to 85
C)
D
Maximum Conversion Rate
10 Mega-Samples per Second
(MSPS) Min
D
2.7-V to 3.6-V Single-Supply Operation
D
Low Power Consumption . . . 42 mW Typ at
3 V
D
Low Voltage Replacement for CXD1175
Applications
D
Communications
D
Digital Imaging
D
Video Conferencing
D
High-Speed Data Conversion
description
The TLV5510 is a CMOS 8-bit resolution semiflash analog-to-digital converter (ADC) with a 2.7-V to 3.6-V single
power supply and an internal reference voltage source. It converts a wide band analog signal (such as a video
signal) to a digital signal at a sampling rate of dc to 10 MHz.
functional block diagram
Lower Sampling
Comparators
(4 Bit)
Lower Encoder
(4 Bit)
Lower Data
Latch
Lower Sampling
Comparators
(4 Bit)
Lower Encoder
(4 Bit)
Upper Sampling
Comparators
(4 Bit)
Upper Encoder
(4 Bit)
Upper Data
Latch
Clock
Generator
OE
D1(LSB)
D2
D3
D4
D5
D6
D7
D8(MSB)
CLK
REFB
REFT
REFBS
AGND
AGND
ANALOG IN
VDDA
REFTS
200
NOM
60
NOM
40
NOM
Resistor
Reference
Divider
Copyright
1999, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
OE
DGND
D1(LSB)
D2
D3
D4
D5
D6
D7
D8(MSB)
V
DDD
CLK
DGND
REFB
REFBS
AGND
AGND
ANALOG IN
V
DDA
REFT
REFTS
V
DDA
V
DDA
V
DDD
PW OR NS PACKAGE
(TOP VIEW)
Also available in tape and reel and
ordered as the TLV5510INSR.
AVAILABLE OPTIONS
35
C to 85
C
SOP (NS)
TA
TLV5510INS
PACKAGE
TSSOP (PW)
TLV5510IPW
TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C DECEMBER 1997 REVISED DECEMBER 1999
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
schematics of inputs and outputs
EQUIVALENT OF ANALOG INPUT
VDDA
AGND
ANALOG IN
EQUIVALENT OF EACH DIGITAL INPUT
VDDD
DGND
OE, CLK
EQUIVALENT OF EACH DIGITAL OUTPUT
VDDD
DGND
D1 D8
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
I/O
DESCRIPTION
AGND
20, 21
Analog ground
ANALOG IN
19
I
Analog input
CLK
12
I
Clock input
DGND
2, 24
Digital ground
D1 D8
3 10
O
Digital data out. D1:LSB, D8:MSB
OE
1
I
Output enable. When OE = low, data is enabled. When OE = high, D1 D8 is high impedance.
VDDA
14, 15, 18
Analog supply voltage
VDDD
11, 13
Digital supply voltage
REFB
23
I
Reference voltage in (bottom)
REFBS
22
Reference voltage (bottom). When using the internal voltage divider to generate a nominal 2-V reference,
this terminal is shorted to the REFB terminal and the REFTS terminal is shorted to the REFT terminal (see
Figure 21).
REFT
17
I
Reference voltage in (top)
REFTS
16
Reference voltage (top). When using the internal voltage divider to generate a nominal 2-V reference, this
terminal is shorted to the REFT terminal and the REFBS terminal is shorted to the REFB terminal (see
Figure 21).
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DDA
, V
DDD
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference voltage input range, REFT, REFB, REFBS, REFTS
AGND to V
DDA
. . . . . . . . . . . . . . . . . . . . . . . . .
Analog input voltage range, V
I(ANLG)
AGND to V
DDA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital input voltage range, V
I(DGTL)
DGND to V
DDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital output voltage range, V
O(DGTL)
DGND to V
DDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
35
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
55
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C DECEMBER 1997 REVISED DECEMBER 1999
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
NOM
MAX
UNIT
VDDA AGND
2.7
3
3.6
V
Supply voltage
VDDD DGND
2.7
3
3.6
V
AGND DGND
100
0
100
mV
Reference input voltage (top), REFT
REFB+2
VDDA0.3
V
Reference input voltage (bottom), REFB
0
0.6
REFT 2
V
Analog input voltage range, VI(ANLG) (see Note 1)
REFB
REFT
V
High-level input voltage, VIH
2.5
V
Low-level input voltage, VIL
0.5
V
Pulse duration, clock high, tw(H)
10
ns
Pulse duration, clock low, tw(L)
10
ns
Clock frequency, f(CLK)
10
MHz
Sampling frequency, fs
10
MSPS
NOTE 1: REFT REFB
2.4 V maximum
electrical characteristics at V
DDD
= V
DDA
= 3 V, REFT = 2.5 V, REFB = 0.5 V, f
(CLK)
= 10 MHz,
T
A
= 25
C (unless otherwise noted)
digital I/O
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIH
High-level input current
VDDD = MAX,
VIH = VDDD
5
A
IIL
Low-level input current
VDDD = MAX,
VIL = 0
5
A
IOH
High-level output current
OE = GND,
VDDD = MIN,
VOH = VDDD 0.5 V
1.6
mA
IOL
Low-level output current
OE = GND,
VDDD = MIN,
VOL = 0.4 V
2.6
mA
IOZH
High-level high-impedance-state
output leakage current
OE = VDDD,
VDDD = MAX
VOH = VDDD
15
A
IOZL
Low-level high-impedance-state
output leakage current
OE = VDDD,
VDDD = MIN
VOL = 0
15
A
Conditions marked MIN or MAX are as stated in recommended operating conditions.
power
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDD
Supply current
fsin = 1 MHz sine wave, reference resistor dissipation is separate
4
10
mA
Iref
Reference voltage current
REF = REFT REFB = 2 V
6
10
14
mA
Conditions marked MIN or MAX are as stated in recommended operating conditions.
TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C DECEMBER 1997 REVISED DECEMBER 1999
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at V
DDD
= V
DDA
= 3 V, REFT = 2.5 V, REFB = 0.5 V, f
(CLK)
= 10 MHz,
T
A
= 25
C (unless otherwise noted) (continued)
static performance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Self-bias (1), at REFB
Short REFB to REFBS
Short REFT to REFTS
0.54
0.60
0.72
Self-bias (1), REFT REFB
Short REFB to REFBS,
Short REFT to REFTS
1.8
2
2.4
V
Self-bias (2), at REFT
Short REFB to AGND,
Short REFT to REFTS
2.25
2.5
3
Rref
Reference voltage resistor
Between REFT and REFB
140
200
260
Ci
Analog input capacitance
VI(ANLG) = 1.5 V + 0.07 Vrms
16
pF
Integral nonlinearity (INL)
f(CLK) = 10 MHz,
TA = 25
C
0.3
0.75
Integral nonlinearity (INL)
(CLK)
,
VI = 0.5 V to 2.5 V
TA = 35
C to 85
C
1
LSB
Differential nonlinearity (DNL)
f(CLK) = 10 MHz,
TA = 25
C
0.2
0.5
LSB
Differential nonlinearity (DNL)
(CLK)
,
VI = 0.5 V to 2.5 V
TA = 35
C to 85
C
0.75
EZS
Zero-scale error
REF = REFT REFB = 2 V
18
43
68
mV
EFS
Full-scale error
REF = REFT REFB = 2 V
20
0
20
mV
Conditions marked MIN or MAX are as stated in recommended operating conditions.
operating characteristics at V
DDD
= V
DDA
= 3 V, REFT = 2.5 V, REFB = 0.5 V, f
(CLK)
= 10 MHz,
T
A
= 25
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fconv
Maximum conversion rate
fI = 1-kHz ramp wave form,
VI(ANLG) = 0.5 V 2.5 V
0.2
10
MSPS
BW
Analog input bandwidth
At 1 dB
17
MHz
BW
Analog input bandwidth
At 3 dB
36
MHz
td(D)
Digital output delay time
CL
10 pF (see Note 1 and Figure 1)
18
30
ns
tAJ
Aperture jitter time
30
ps
td(s)
Sampling delay time
4
ns
ten
Enable time, OE
to valid data
CL = 10 pF
15
ns
tdis
Disable time, OE
to high impedance
CL = 10 pF
10
ns
Input tone = 1 MHz
TA = 25
C
41
Spurious free dynamic range (SFDR)
Input tone = 1 MHz
Full range
41
dB
Spurious free dynamic range (SFDR)
Input tone = 1 4 MHz
TA = 25
C
38
dB
Input tone = 1.4 MHz
Full range
38
SNR
Signal to noise ratio
Input tone = 1 4 MHz
TA = 25
C
38
dB
SNR
Signal-to-noise ratio
Input tone = 1.4 MHz
Full range
37
dB
NOTE 2: CL includes probe and jig capacitance.
TLV5510
2.7-V TO 3.6-V 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS124C DECEMBER 1997 REVISED DECEMBER 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
N
N + 1
N + 2
N + 3
N + 4
N 3
N 2
N 1
N
N + 1
tpd
CLK (Clock)
ANALOG IN
(Input Signal)
D1 D8
(Output Data)
tw(H)
tw(L)
Figure 1. I/O Timing Diagram
TYPICAL CHARACTERISTICS
Figure 2
6
4
2
0
0
2
4
6
Power Dissipation mW
8
10
Sampling Frequency MHz
POWER DISSIPATION
vs
SAMPLING FREQUENCY
12
8
10
12
TA = 25
C
VDDA = 2.7 V,
VREFB = 0.5 V,
VREFT = 2.5 V,
Fclk = 10 MHz
Figure 3
100
4
5
7
8
2
1
0
Gain dB
ANALOG INPUT BANDWIDTH
fI Input Frequency MHz
3
6
101
102
TA = 25
C
VDDA = 2.7 V,
VREFB = 0.5 V,
VREFT = 2.5 V,
Fclk = 10 MHz