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FEATURES
DESCRIPTION
1
2
3
4
8
7
6
5
V
O1
IN1-
BYPASS
GND
V
DD
V
O2
IN2-
SHUTDOWN
D OR DGN PACKAGE
(TOP VIEW)
TYPICAL APPLICATION CIRCUIT
Audio
Input
Bias
Control
8
1
7
4
V
O1
V
O2
V
DD
5
2
3
6
IN 1-
BYPASS
SHUTDOWN
V
DD
/2
C
I
R
I
R
F
C
(BYP)
C
(S)
Audio
Input
C
I
R
I
IN 2-
R
F
V
DD
From Shutdown
Control Circuit
-
+
-
+
C
(C)
C
(C)
TPA6111A2
SLOS313B DECEMBER 2000 REVISED JUNE 2004
150-mW STEREO AUDIO POWER AMPLIFIER
150-mW Stereo Output
The TPA6111A2 is a stereo audio power amplifier
packaged in either an 8-pin SOIC or an 8-pin
PC Power Supply Compatible
PowerPADTM MSOP package capable of delivering
Fully Specified for 3.3-V and
150 mW of continuous RMS power per channel into
5-V Operation
16-
loads. Amplifier gain is externally configured by
Operation to 2.5 V
means of two resistors per input channel and does
not require external compensation for settings of 0 to
Pop Reduction Circuitry
20 dB.
Internal Midrail Generation
THD+N, when driving a 16-
load from 5 V, is 0.03%
Thermal and Short-Circuit Protection
at 1 kHz, and less than 1% across the audio band of
Surface-Mount Packaging
20 Hz to 20 kHz. For 32-
loads, the THD+N is
PowerPADTM MSOP
reduced to less than 0.02% at 1 kHz, and is less than
1% across the audio band of 20 Hz to 20 kHz. For
SOIC
10-k
loads, the THD+N performance is 0.005% at 1
Pin Compatible With TPA122, LM4880, and
kHz, and less than 0.5% across the audio band of 20
LM4881 (SOIC)
Hz to 20 kHz.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright 20002004, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATING TABLE
TPA6111A2
SLOS313B DECEMBER 2000 REVISED JUNE 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES
MSOP
T
A
SMALL OUTLINE
(1)
MSOP
(1)
SYMBOLIZATION
(D)
(DGN)
40
C to 85
C
TPA6111A2D
TPA6111A2DGN
TI AJA
(1)
The D and DGN package is available in left-ended tape and reel only (e.g., TPA6111A2DR,
TPA6111A2DGNR).
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
BYPASS
3
I
Tap to voltage divider for internal mid-supply bias supply. Connect to a 0.1-F to 1-F low ESR capacitor
for best performance.
GND
4
I
GND is the ground connection.
IN1
2
I
IN1 is the inverting input for channel 1.
IN2
6
I
IN2 is the inverting input for channel 2.
SHUTDOWN
5
I
Puts the device in a low quiescent current mode when held high
V
DD
8
I
V
DD
is the supply voltage terminal.
V
O1
1
O
V
O1
is the audio output for channel 1.
V
O2
7
O
V
O2
is the audio output for channel 2.
over operating free-air temperature range (unless otherwise noted)
(1)
UNIT
V
DD
Supply voltage
6 V
V
I
Input voltage
0.3 V to V
DD
+ 0.3 V
Continuous total power dissipation
internally limited
T
J
Operating junction temperature range
40
C to 150
C
T
stg
Storage temperature range
65
C to 150
C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
C
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
T
A
25
C
DERATING FACTOR
T
A
= 70
C
T
A
= 85
C
PACKAGE
POWER RATING
ABOVE T
A
= 25
C
POWER RATING
POWER RATING
D
725 mW
5.8 mW/
C
464 mW
377 mW
DGN
2.14 W
(1)
17.1 mW/
C
1.37 W
1.11 W
(1)
See the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled Texas Instruments
Recommended Board for PowerPAD on page 33 of the before-mentioned document.
2
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RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
AC OPERATING CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS
TPA6111A2
SLOS313B DECEMBER 2000 REVISED JUNE 2004
MIN
MAX
UNIT
V
DD
Supply voltage
2.5
5.5
V
T
A
Operating free-air temperature
40
85
C
V
IH
High-level input voltage (SHUTDOWN)
60% x V
DD
V
V
IL
Low-level input voltage (SHUTDOWN)
25% x V
DD
V
at V
DD
= 3.3 V, T
A
= 25
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
OO
Output offset voltage
10
mV
PSRR
Power supply rejection ratio
V
DD
= 3.2 V to 3.4 V
70
dB
I
DD
Supply current
SHUTDOWN (pin 5) = 0 V
1.5
3
mA
I
DD(SD)
Supply current in shutdown mode
SHUTDOWN (pin 5) = V
DD
1
10
A
Z
i
Input impedance
> 1
M
V
DD
= 3.3 V, T
A
= 25
C, R
L
= 16
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
O
Output power (each channel)
THD
0.1%, f = 1 kHz
60
mW
THD+N
Total harmonic distortion + noise
P
O
= 40 mW, 20 Hz 20 kHz
0.4%
B
OM
Maximum output power BW
G = 20 dB, THD < 5%
> 20
kHz
Phase margin
Open loop
96
Supply ripple rejection
f = 1 kHz, C
(BYP)
= 0.47 F
71
dB
Channel/channel output separation
f = 1 kHz, P
O
= 40 mW
89
dB
SNR
Signal-to-noise ratio
P
O
= 50 mW, A
V
= 1
100
dB
V
n
Noise output voltage
A
V
= 1
11
V(rms)
at V
DD
= 5.5 V, T
A
= 25
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
OO
Output offset voltage
10
mV
PSRR
Power supply rejection ratio
V
DD
= 4.9 V to 5.1 V
70
dB
I
DD
Supply current
SHUTDOWN (pin 5) = 0 V
1.6
3.2
mA
I
DD(SD)
Supply current in shutdown mode
SHUTDOWN (pin 5) = V
DD
1
10
A
|I
IH
|
High-level input current (SHUTDOWN)
V
DD
= 5.5 V, V
I
= V
DD
1
A
|I
IL
|
Low-level input current (SHUTDOWN)
V
DD
= 5.5 V, V
I
= 0 V
1
A
Z
i
Input impedance
> 1
M
3
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AC OPERATING CHARACTERISTICS
AC OPERATING CHARACTERISTICS
AC OPERATING CHARACTERISTICS
TPA6111A2
SLOS313B DECEMBER 2000 REVISED JUNE 2004
V
DD
= 5 V, T
A
= 25
C, R
L
= 6
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
O
Output power (each channel)
THD
0.1%, f = 1 kHz
150
mW
THD+N
Total harmonic distortion + noise
P
O
= 100 mW, 20 Hz 20 kHz
0.6%
B
OM
Maximum output power BW
G = 20 dB, THD < 5%
> 20
kHz
Phase margin
Open loop
96
Supply ripple rejection ratio
f = 1 kHz, C
(BYP)
= 0.47 F
61
dB
Channel/channel output separation
f = 1 kHz, P
O
= 100 mW
90
dB
SNR
Signal-to-noise ratio
P
O
= 100 mW, A
V
= 1
100
dB
V
n
Noise output voltage
A
V
= 1
11.7
V(rms)
V
DD
= 3.3 V, T
A
= 25
C, R
L
= 32
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
O
Output power (each channel)
THD
0.1%, f = 1 kHz
35
mW
THD+N
Total harmonic distortion + noise
P
O
= 40 mW, 20 Hz 20 kHz
0.4%
B
OM
Maximum output power BW
G = 20 dB, THD < 2%
> 20
kHz
Phase margin
Open loop
96
Supply ripple rejection
f = 1 kHz, C
(BYP)
= 0.47 F
71
dB
Channel/channel output separation
f = 1 kHz, P
O
= 25 mW
75
dB
SNR
Signal-to-noise ratio
P
O
= 90 mW, A
V
= 1
100
dB
V
n
Noise output voltage
A
V
= 1
11
V(rms)
V
DD
= 5 V, T
A
= 25
C, R
L
= 32
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
P
O
Output power (each channel)
THD
0.1%, f = 1 kHz
90
mW
THD+N
Total harmonic distortion + noise
P
O
= 20 mW, 20 Hz 20 kHz
2%
B
OM
Maximum output power BW
G = 20 dB, THD < 2%
> 20
kHz
Phase margin
Open loop
97
Supply ripple rejection
f = 1 kHz, C
(BYP)
= 0.47 F
61
dB
Channel/channel output separation
f = 1 kHz, P
O
= 65 mW
98
dB
SNR
Signal-to-noise ratio
P
O
= 90 mW, A
V
= 1
104
dB
V
n
Noise output voltage
A
V
= 1
11.7
V(rms)
4
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TYPICAL CHARACTERISTICS
0.001
10
0.01
0.1
1
20
20k
100
1k
10k
THD+N - T
otal Harmonic Distortion + Noise - %
f - Frequency - Hz
V
DD
= 3.3 V,
P
O
= 25 mW,
C
B
= 1
F,
R
L
= 32
,
A
V
= -1 V/V
10
100
0.001
10
0.01
0.1
1
THD+N - T
otal Harmonic Distortion + Noise - %
V
DD
= 3.3 V,
R
L
= 32
,
A
V
= -1 V/V,
C
B
= 1
F
50
P
O
- Output Power - mW
20 Hz
1 kHz
20 kHz
TPA6111A2
SLOS313B DECEMBER 2000 REVISED JUNE 2004
Table of Graphs
FIGURE
vs Frequency
1, 3, 5, 6, 7, 9, 11, 13,
THD+N
Total harmonic distortion plus noise
vs Output power
2, 4, 8, 10, 12, 14
Supply ripple rejection ratio
vs Frequency
15, 16
V
n
Output noise voltage
vs Frequency
17, 18
Crosstalk
vs Frequency
1924
Shutdown attenuation
vs Frequency
25, 26
Open-loop gain and phase margin
vs Frequency
27, 28
Output power
vs Load resistance
29, 30
I
DD
Supply current
vs Supply voltage
31
SNR
Signal-to-noise ratio
vs Voltage gain
32
Power dissipation/amplifier
vs Load power
33, 34
TOTAL HARMONIC DISTORTION + NOISE
TOTAL HARMONIC DISTORTION + NOISE
vs
vs
FREQUENCY
OUTPUT POWER
Figure 1.
Figure 2.
5
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