TPS2030, TPS2031, TPS2032, TPS2033, TPS2034
POWER DISTRIBUTION SWITCHES
SLVS190B - DECEMBER 1998 - REVISED MARCH 2004
1
TI.COM
D
33-m
(5-V Input) High-Side MOSFET
Switch
D
Short-Circuit and Thermal Protection
D
Overcurrent Logic Output
D
Operating Range . . . 2.7 V to 5.5 V
D
Logic-Level Enable Input
D
Typical Rise Time . . . 6.1 ms
D
Undervoltage Lockout
D
Maximum Standby Supply
Current . . . 10
A
D
No Drain-Source Back-Gate Diode
D
Available in 8-pin SOIC and PDIP Packages
D
Ambient Temperature Range, - 40
C to 85
C
D
2-kV Human-Body-Model, 200-V
Machine-Model ESD Protection
D
UL Listed - File No. E169910
description
The TPS203x family of power distribution switches is intended for applications where heavy capacitive loads
and short circuits are likely to be encountered. These devices are 50-m
N-channel MOSFET high-side power
switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is
provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize
current surges during switching. The charge pump requires no external components and allows operation from
supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the TPS203x limits the output
current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low.
When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the
junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from
a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch
remains off until valid input voltage is present.
The TPS203x devices differ only in short-circuit current threshold. The TPS2030 limits at 0.3-A load, the
TPS2031 at 0.9-A load, the TPS2032 at 1.5-A load, the TPS2033 at 2.2-A load, and the TPS2034 at 3-A load
(see Available Options). The TPS203x is available in an 8-pin small-outline integrated-circuit (SOIC) package
and in an 8-pin dual-in-line (DIP) package and operates over a junction temperature range of - 40
C to 125
C.
TPS201xA
TPS202x
TPS203x
33 m
, single
0.2 A - 2 A
0.2 A - 2 A
0.2 A - 2 A
TPS2014
TPS2015
TPS2041
TPS2051
TPS2045
TPS2055
80 m
, single
600 mA
1 A
500 mA
500 mA
250 mA
250 mA
GENERAL SWITCH CATALOG
TPS2042
TPS2052
TPS2046
TPS2056
80 m
, dual
500 mA
500 mA
250 mA
250 mA
TPS2100/1
260 m
IN1 500 mA
IN2 10 mA
OUT
IN1
IN2
TPS2102/3/4/5
IN1 500 mA
IN2 100 mA
1.3
TPS2043
TPS2053
TPS2047
TPS2057
80 m
, triple
500 mA
500 mA
250 mA
250 mA
TPS2044
TPS2054
TPS2048
TPS2058
80 m
, quad
500 mA
500 mA
250 mA
250 mA
Copyright
1999 - 2004 Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
8
7
6
5
GND
IN
IN
EN
OUT
OUT
OUT
OC
D OR P PACKAGE
(TOP VIEW)
TPS2030, TPS2031, TPS2032, TPS2033, TPS2034
POWER DISTRIBUTION SWITCHES
SLVS190B - DECEMBER 1998 - REVISED MARCH 2004
2
TI.COM
AVAILABLE OPTIONS
RECOMMENDED
MAXIMUM CONTINUOUS
TYPICAL SHORT-CIRCUIT
PACKAGED DEVICES
TA
ENABLE
MAXIMUM CONTINUOUS
LOAD CURRENT
(A)
TYPICAL SHORT-CIRCUIT
CURRENT LIMIT AT 25
C
(A)
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
0.2
0.3
TPS2030D
TPS2030P
0.6
0.9
TPS2031D
TPS2031P
- 40
C to 85
C
Active high
1
1.5
TPS2032D
TPS2032P
- 40 C to 85 C
Active high
1.5
2.2
TPS2033D
TPS2033P
2
3
TPS2034D
TPS2034P
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2030DR)
TPS2030 functional block diagram
OUT
OC
IN
EN
GND
Current
Limit
Driver
UVLO
Charge
Pump
CS
Thermal
Sense
Power Switch
Current Sense
Terminal Functions
TERMINAL
NAME
NO.
D OR P
I/O
DESCRIPTION
EN
4
I
Enable input. Logic high turns on power switch.
GND
1
I
Ground
IN
2, 3
I
Input voltage
OC
5
O
Overcurrent. Logic output active low
OUT
6, 7, 8
O
Power-switch output
TPS2030, TPS2031, TPS2032, TPS2033, TPS2034
POWER DISTRIBUTION SWITCHES
SLVS190B - DECEMBER 1998 - REVISED MARCH 2004
3
TI.COM
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 m
(V
I(IN)
= 5 V).
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when
disabled.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range.
enable (EN)
The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 10
A when a logic low is present on EN . A logic high input on EN restores bias
to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS
logic levels.
overcurrent ( OC )
The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
current sense
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to
approximately 140
C. Hysteresis is built into the thermal sense circuit. After the device has cooled
approximately 20
C, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control
signal turns off the power switch.
TPS2030, TPS2031, TPS2032, TPS2033, TPS2034
POWER DISTRIBUTION SWITCHES
SLVS190B - DECEMBER 1998 - REVISED MARCH 2004
4
TI.COM
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Input voltage range, V
I(IN)
(see Note 1)
-0.3 V to 6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range, V
O(OUT)
(see Note 1)
-0.3 V to V
I(IN)
+ 0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range,V
I(EN)
-0.3 V to 6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous output current, I
O(OUT)
internally limited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, T
J
-40
C to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
-65
C to 150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds
260
C
. . . . . . . . . . . . . . . . . . . . . . .
Electrostatic discharge (ESD) protection: Human body model
2 kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Machine model
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charged device model (CDM)
750 V
. . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
DISSIPATION RATING TABLE
PACKAGE
TA
25
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
C
TA = 70
C
POWER RATING
TA = 85
C
POWER RATING
D
725 mW
5.8 mW/
C
464 mW
377 mW
P
1175 mW
9.4 mW/
C
752 mW
611 mW
recommended operating conditions
MIN
MAX
UNIT
Input voltage
VI(IN)
2.7
5.5
V
Input voltage
VI(EN)
0
5.5
V
TPS2030
0
0.2
TPS2031
0
0.6
Continuous output current, IO
TPS2032
0
1
A
Continuous output current, IO
TPS2033
0
1.5
A
TPS2034
0
2
Operating virtual junction temperature, TJ
- 40
125
C
TPS2030, TPS2031, TPS2032, TPS2033, TPS2034
POWER DISTRIBUTION SWITCHES
SLVS190B - DECEMBER 1998 - REVISED MARCH 2004
5
TI.COM
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 5 V (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VI(IN) = 5 V,
TJ = 25
C,
IO = 1.8 A
33
36
VI(IN) = 5 V,
TJ = 85
C,
IO = 1.8 A
38
46
VI(IN) = 5 V,
TJ = 125
C,
IO = 1.8 A
44
50
VI(IN) = 3.3 V,
TJ = 25
C,
IO = 1.8 A
37
41
VI(IN) = 3.3 V,
TJ = 85
C,
IO = 1.8 A
43
52
rDS(on)
Static drain-source on-state resistance
VI(IN) = 3.3 V,
TJ = 125
C,
IO = 1.8 A
51
61
m
rDS(on)
Static drain-source on-state resistance
VI(IN) = 5 V,
TJ = 25
C,
IO = 0.18 A
30
34
m
VI(IN) = 5 V,
TJ = 85
C,
IO = 0.18 A
35
41
VI(IN) = 5 V,
TJ = 125
C,
IO = 0.18 A
39
47
VI(IN) = 3.3 V,
TJ = 25
C,
IO = 0.18 A
33
37
VI(IN) = 3.3 V,
TJ = 85
C,
IO = 0.18 A
39
46
VI(IN) = 3.3 V,
TJ = 125
C,
IO = 0.18 A
44
56
tr
Rise time, output
VI(IN) = 5.5 V,
CL = 1
F,
TJ = 25
C,
RL = 10
6.1
ms
tr
Rise time, output
VI(IN) = 2.7 V,
CL = 1
F,
TJ = 25
C,
RL = 10
8.6
ms
tf
Fall time, output
VI(IN) = 5.5 V,
CL = 1
F,
TJ = 25
C,
RL = 10
3.4
ms
tf
Fall time, output
VI(IN) = 2.7 V,
CL = 1
F,
TJ = 25
C,
RL = 10
3
ms
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input ( EN )
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIH
High-level input voltage
2.7 V
VI(IN)
5.5 V
2
V
VIL
Low-level input voltage
4.5 V
VI(IN)
5.5 V
0.8
V
VIL
Low-level input voltage
2.7 V
VI(IN)
4.5 V
0.5
V
II
Input current
EN = 0 V or EN = VI(IN)
- 0.5
0.5
A
ton
Turnon time
CL = 100
F, RL = 10
20
ms
toff
Turnoff time
CL = 100
F, RL = 10
40
ms
current limit
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TPS2030
0.22
0.3
0.4
TJ = 25
C, VI = 5.5 V,
TPS2031
0.66
0.9
1.1
IOS
Short-circuit output current
TJ = 25
C, VI = 5.5 V,
OUT connected to GND,
Device enable into short circuit
TPS2032
1.1
1.5
1.8
A
IOS
Short-circuit output current
OUT connected to GND,
Device enable into short circuit
TPS2033
1.65
2.2
2.7
A
TPS2034
2.2
3
3.8
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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