2SC4738FT
2002-01-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738FT
Audio Frequency General Purpose Amplifier Applications
High Voltage: V
CEO
= 50 V
High Current: I
C
= 150 mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
Linearity
:
h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Complementary to 2SA1832FT
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
60 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
150 mA
Base current
I
B
30 mA
Collector power dissipation
P
C
100 mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55 to 125
C
Marking
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 60 V, I
E
= 0
0.1 mA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
0.1
mA
DC current gain
h
FE
(Note)
V
CE
= 6 V, I
C
= 2 mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 100 mA, I
B
= 10 mA
0.1 0.25
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 1 mA
80
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2.0 3.5 pF
Note: h
FE
Classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking symbol
Unit: mm
JEDEC
JEITA
TOSHIBA 2-1B1A
Type Name
L Y
h
FE
Rank
2SC4738FT
2002-01-16
2
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
Ambient temperature Ta (
C)
P
C
Ta
C
o
l
l
e
ct
or pow
er di
ssi
p
a
ti
on
P
C
(
m
W
)
B
a
se
c
u
r
r
en
t I
B
(
m
A)
Base-emitter voltage VBE (V)
I
B
V
BE
Collector current IC (mA)
f
T
I
C
T
r
an
s
i
t
i
on
fr
eq
ue
n
c
y
f T
(
M
H
z
)
120
0 140
100
80
40
120
60
20
80
0
20
40
60
100
Collector current I
C
(mA)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
Collector current I
C
(mA)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
Collector current I
C
(mA)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Common emitter
IC/IB = 10
Ta
= 25C
0.1
5
1 100
30
0.3
3
0.3
3 10
0.1
1
0.5
300
0.1 1
100
30
0.3 3
10
300
Common emitter
IC/IB = 10
0.01
Ta
= 100C
25
-25
0.5
0.3
0.03
0.1
0.05
100
3
0 1.4
1.0
0.8
0.4
0.3
1.2
0.5
1
5
30
50
10
Common emitter
VCE = 6 V
Ta
= 100C 25
-25
0.6
0.2
300
500
2000
1000
1000
300
3000
500
Common emitter
VCE = 10 V
Ta
= 25C
10
100
30
50
0.1 1
100
30
0.3
3 10
300
0 7
2
1
0
80
240
Common emitter
Ta
= 25C
160
IB = 0.2 mA
5.0
6
6.0
3.0
2.0
4
3
200
120
40
5
1.0
0.5
0
0.1
500
1 100
30
0.3
300
Common emitter
VCE = 6 V
VCE = 1 V
30
3 10
10
Ta
= 100C
100
50
300
25
-25
2SC4738FT
2002-01-16
3
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
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Handbook" etc..
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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