2SC5738
2001-12-17
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5738
High-Speed Switching Applications
DC-DC Converter Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.5 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.15 V (max)
High-speed switching: t
f
= 90 ns (typ.)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
40 V
Collector-emitter voltage
V
CEX
30 V
Collector-emitter voltage
V
CEO
20 V
Emitter-base voltage
V
EBO
7 V
DC I
C
3.5
Collector current
Pulse I
CP
6.0
A
Base current
I
B
350
mA
DC 625
Collector power
dissipation
t
= 10 s
P
C
(Note)
1000
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 40 V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
20
V
h
FE
(1)
V
CE
= 2 V, I
C
= 0.5 A
400
1000
DC current gain
h
FE
(2)
V
CE
= 2 V, I
C
= 1.6 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 1.6 A, I
B
= 32 mA
0.15
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 1.6 A, I
B
= 32 mA
1.10
V
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
18 pF
Rise time
t
r
100
Storage time
t
stg
350
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
~
- 12 V, R
L
= 7.5 W
I
B1
= -I
B2
= 53 mA
90
ns
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3S1A
Weight: 0.01 g (typ.)
2SC5738
2001-12-17
2
Marking
W D
Figure 1 Switching Time Test Circuit &
Timing Chart
I
B2
I
B1
20
ms
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
< 1%
2SC5738
2001-12-17
3
Base-emitter voltage V
BE
(V)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
lta
ge
V
BE (sat)
(V
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector current I
C
(A)
V
CE (sat)
I
C
C
o
l
l
e
c
t
or
-e
mi
tte
r s
a
tu
rati
on
v
o
l
t
age
V
CE (sat)
(V
)
Collector current I
C
(A)
V
BE (sat)
I
C
I
C
V
BE
0.001
0.01
0.1 1 10
1000
100
10
25
Ta
= 100C
-55
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
0.001
1
0.1
0.01
0.001 0.01 0.1
1
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
25C
-55C
Ta
= 100C
0.001
0.01
0.1 1 10
0.1
1
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Ta
= 100C
25
-55
0
0
6
5
4
3
2
1
0.2 0.4 0.6
1 1.2
0.8
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Ta
= 100C
-55
25
0
0
Common emitter
Ta
= 25C
Single nonrepetitive pulse
6
5
4
3
2
1
0.1
60
50
40
30
20
10
5
IB = 2 mA
0.2 0.3
0.5
0.4
2SC5738
2001-12-17
4
Collector-emitter voltage V
CE
(V)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Transient Thermal Resistance r
th
t
w
Pulse width t
w
(s)
Tr
ansi
e
nt the
r
m
a
l
r
e
si
st
anc
e
r
th
(
C
/
W
)
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
1000
1
0.001
100
10
0.01 0.1 1 10 100 1000
Safe Operating Area
10
0.01
0.1
1 10 100
0.1
1
IC max (pulsed)
IC max (continuous)
DC operation *
(Ta
= 25C)
10
ms
V
CEO
max
: Single nonrepetitive pulse
Ta
= 25C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren't
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2
). These characteristic
curves must be derated linearly with
increase in temperature.
100
ms
1 ms
10 ms
100 ms
*
10 s
*
2SC5738
2001-12-17
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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