TOSHIBA
TOSHIBA CORPORATION
1/6
Discrete Semiconductors
2SK1358
Field Effect Transistor
Silicon N Channel MOS Type (
-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
Low Drain-Source ON Resistance
- R
DS(ON)
= 1.1
(Typ.)
High Forward Transfer Admittance
-
Y
fs
= 4.0S (Typ.)
Low Leakage Current
- I
DSS
= 300
A (Max.) @ V
DS
= 720V
Enhancement-Mode
- V
th
= 1.5 ~ 3.5V @ V
DS
= 10V, I
D
= 1mA
This transistor is an electrostatic sensitive device. Please handle with care.
Absolute Maximum Ratings (Ta = 25
C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DSS
900
V
Drain-Gate Voltage (R
GS
= 20k
)
V
DGR
900
V
Gate-Source Voltage
V
GSS
30
V
Drain Current
DC
I
D
9
A
Pulse
I
DP
27
Drain Power Dissipation
(Tc = 25
C)
P
D
150
W
Channel Temperature
T
ch
150
C
Storage Temperature Range
T
stg
-55 ~ 150
C
Thermal Characteristics
CHARACTERISTIC
SYMBOL
MAX.
UNIT
Thermal Resistance, Channel to Case
R
th(ch-c)
0.833
C/W
Thermal Resistance, Channel to Ambient
R
th(ch-a)
50
C/W
Unit in mm
Industrial Applications
2/6
TOSHIBA CORPORATION
2SK1358
Source-Drain Diode Ratings and Characteristics (Ta = 25
C)
Electrical Characteristics (Ta = 25
C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=
25V, V
DS
= 0V
100
nA
Drain Cut-off Current
I
DSS
V
DS
= 720V, V
GS
= 0V
300
A
Drain-Source Breakdown Voltage
V
(BR) DSS
I
D
= 10mA, V
GS
= 0V
900
V
Gate Threshold Voltage
V
th
V
DS
= 10V, I
D
= 1mA
1.5
3.5
V
Drain-Source ON Resistance
R
DS (ON)
I
D
= 4A, V
GS
= 10V
1.1
1.4
Forward Transfer Admittance
Y
fs
V
DS
= 20V, I
D
= 4A
2.0
4.0
S
Input Capacitance
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
1300
1800
pF
Reverse Transfer Capacitance
C
rss
100
150
Output Capacitance
C
oss
180
260
Switching
Time
Rise Time
t
r
25
50
ns
Turn-on Time
t
on
40
80
Fall Time
t
f
20
40
Turn-off Time
t
off
100
200
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Q
g
V
DD
= 400V, V
GS
= 10V,
I
D
= 9A
120
240
nC
Gate-Source Charge
Q
gs
70
Gate-Drain ("Miller") Charge
Q
gd
50
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Continuous Drain Reverse Current
I
DR
9
A
Pulse Drain Reverse Current
I
DRP
27
A
Diode Forward Voltage
V
DSF
I
DR
= 9A, V
GS
= 0V
-2.0
V
6/6
TOSHIBA CORPORATION
2SK1358
f
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip-
ments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
Notes
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