2SK3125
2002-08-23
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3125
DC-DC Converter, Relay Drive and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 5.3 m (typ.)
High forward transfer admittance: |Y
fs
| = 60 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.5~3.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1) I
D
70
Drain current
Pulse (Note
1)
I
DP
210
A
Drain power dissipation (Tc
= 25C)
P
D
150
W
Single pulse avalanche energy
(Note
2)
E
AS
955
mJ
Avalanche current
I
AR
70 A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.833
C/W
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: V
DD
= 25 V, T
ch
= 25C, L = 140 mH, R
G
= 25 W, I
AR
= 70 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-16H1A
Weight: 3.65 g (typ.)
2SK3125
2002-08-23
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.5
3.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 30 A
5.3 7.0 mW
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 30 A
30
60
S
Input capacitance
C
iss
4600
Reverse transfer capacitance
C
rss
1400
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
2300
pF
Rise time
t
r
25
Turn-ON time
t
on
40
Fall time
t
f
150
Switching time
Turn-OFF time
t
off
425
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
130
Gate-source charge
Q
gs
90
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 24 V, V
GS
= 10 V, I
D
= 70 A
40
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
70 A
Pulse drain reverse current
(Note 1)
I
DRP
210
A
Forward voltage (diode)
V
DSF
I
DR
= 70 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
150 ns
Reverse recovery charge
Q
rr
I
DR
= 70 A, V
GS
= 0 V,
dI
DR
/dt
= 50 A/ms
225 nC
Marking
Type
TOSHIBA
K3125
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 0.5 W
V
DD
~
- 15 V
I
D
= 30 A
V
OUT
4.
7
9
2SK3125
2002-08-23
3
I
D
- V
DS
I
D
- V
DS
I
D
- V
GS
V
DS
- V
GS
Y
fs
- I
D
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (ON)
(m
W
)
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
R
DS (ON)
- I
D
VGS = 3.25 V
8
10
0 0.2 0.4
1
0.6 0.8
0
20
60
100
40
80
Common source
Tc
= 25C
Pulse test
6
5
4.5
4
3.75
3.5
VGS = 3.25 V
Common source
Tc
= 25C
Pulse test
4.5
8
0
1
2
5
3 4
0
20
60
100
40
80
4
4.25
10
6
5
V
OU
3.5
Tc
= -55C
Common source
VDS = 10 V
Pulse test
25
100
0
20
60
100
40
80
0 1 2
5
3
4
6
30
ID = 70 A
15
Common source
Tc
= 25C
Pulse test
0
0.2
0.6
1.0
0.4
0.8
1.2
0
2
4
10
6
8
12
25
Tc
= -55C
100
Common source
VDS = 10 V
Pulse test
100
1
10
1000
1 1000
10 100
100
1
10
1
100
10
VGS = 10, 15 V
Common source
Tc
= 25C
Pulse test
2SK3125
2002-08-23
4
R
DS (ON)
- Tc
I
DR
- V
DS
Dynamic input/output characteristics
P
D
- Tc
Case temperature Tc (C)
Drain-source voltage V
DS
(V)
Total gate charge Q
g
(nC)
Case temperature Tc (C)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (ON)
(
W
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
GS
(V
)
V
th
Tc
Case temperature Tc (C)
0
-80
-40 0 40
80 120 160
1
2
3
5
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
6
0
0
20
40
80
200
Common source
ID = 70 A
Tc
= 25C
Pulse test
120
10
30
40
VDD = 24 V
VDS
VGS
50
160
0
10
20
5
15
25
12
0
50
150
100
200
0 40
120
200
80 160
-80
-40 0 40
80 120 160
0
4
8
12
16
20
Common source
VGS = 10 V
Pulse test
ID = 15, 30 A
70
1000
Common source
Tc
= 25C
Pulse test
VGS = 0 V, -1 V
3
5
1
10
10
100
1
0
0.4
1.2
0.8
1.6 2.0
2SK3125
2002-08-23
5
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) T
ch
(C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
D
r
ai
n
cu
rre
nt
I
D
(A
)
25
50
75
100 125 150
0
200
400
600
800
1000
1
0.1
10
100
1000
1 10
100
100
ms *
1 ms *
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
VDSS max
ID max
(continuous)
DC operation
Tc
= 25C
10
m 100
m
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 0.833C/W
0.1
10
0.01
1
Single pulse
0.2
0.1
0.05
0.02
0.01
Duty
= 0.5
-15 V
15 V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 25 VL = 140 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
2SK3125
2002-08-23
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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