2SK3130
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3130
Switching Regulator Applications
Reverse-recovery time: t
rr
= 85 ns
Built-in high-speed flywheel diode
Low drain-source ON resistance: R
DS (ON)
= 1.12 (typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage
V
GSS
30 V
DC (Note
1) I
D
6
Drain current
Pulse (Note
1)
I
DP
24
A
Drain power dissipation (Tc
= 25C)
P
D
40
W
Single pulse avalanche energy
(Note
2)
E
AS
345
mJ
Avalanche current
I
AR
6 A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 16.8 mH, R
G
= 25 , I
AR
= 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution
Unit: mm
JEDEC
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
2SK3130
2004-07-06
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
= 100 A, V
DS
= 0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100 A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
600
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 3 A
1.12 1.55
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 3 A
1.5
5.0
S
Input capacitance
C
iss
1300
Reverse transfer capacitance
C
rss
130
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
400
pF
Rise time
t
r
25
Turn-ON time
t
on
45
Fall time
t
f
40
Switching time
Turn-OFF time
t
off
150
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
30
Gate-source charge
Q
gs
18
Gate-drain ("miller") charge
Q
gd
V
DD
- 400 V, V
GS
= 10 V, I
D
= 6 A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
6 A
Pulse drain reverse current
(Note 1)
I
DRP
24 A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-1.7 V
Reverse recovery time
t
rr
85 ns
Reverse recovery charge
Q
rr
I
DR
= 6 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/s
0.21
C
Marking
Duty <= 1%, t
w
= 10 s
0 V
10 V
V
GS
R
L
= 100
V
DD
- 300 V
I
D
= 3 A
V
OUT
50
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3130
Part No. (or abbreviation code)
2SK3130
2004-07-06
3
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ain
cu
rre
nt I
D
(A)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ain
cu
rre
nt I
D
(A)
Gate-source voltage VGS (V)
I
D
V
GS
D
r
ain
cu
rre
nt
I D
(A)
Gate-source voltage VGS (V)
V
DS
V
GS
Dr
ai
n-
s
o
u
r
ce
vo
lt
ag
e
V
DS
(V
)
Drain current ID (A)
|Y
fs
| I
D
Fo
rwar
d
t
r
a
n
sfe
r
ad
mitt
anc
e |
Y
fs
| (S)
Drain current ID (A)
R
DS (ON)
I
D
Drain
-
s
o
urc
e
O
N
res
i
stanc
e
R
DS
(O
N
)
(
)
0
VGS = 5.0 V
15
0 2 4 6 8 10
1
2
3
4
5
Common source
Tc
= 25C
Pulse test
10
6
5.8
5.6
5.4
5.2
0
VGS = 5.0 V
0
10
20
30 40 50
2
4
6
8
10
15
Common source
Tc
= 25C
Pulse test
10
6.4
6.2
6.0
5.8
5.4
0
0 2 4 6 8 10
2
4
6
8
10
Common source
VDS = 20 V
Pulse test
100
Tc
= 25C
0.1
0.1
1
100
1
100
10
10
Common source
VDS = 20 V
Pulse test
Tc
= 25C
100
1
0.1
1
10
10
100
VGS = 10, 15 V
Common source
Tc
= 25C
Pulse test
16
0
4
8
12
20
1.5
3
0
4
8
16
12 20
Common source
Tc
= 25C
Pulse test
ID = 6 A
2SK3130
2004-07-06
4
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(O
N)
(
)
Drain-source voltage VDS (V)
I
DR
V
DS
Drai
n
r
e
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
Drain-source voltage VDS (V)
Capacitance V
DS
C
apaci
t
anc
e
C
(p
F)
Case temperature Tc (C)
V
th
Tc
Gate
th
res
hol
d vol
t
a
g
e
V
th
(
V
)
Case temperature Tc (C)
P
D
Tc
D
r
ain
po
w
e
r
dissi
p
a
tion
P
D
(W
)
G
a
t
e
-
s
our
ce
vo
l
t
a
g
e
V
GS
(V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
D
r
ain
-
so
urc
e
v
o
lt
a
ge V
DS
(V
)
3
0
0 40
120
160
80
1
2
5
4
ID = 6 A
3
Common source
VGS = 10 V
Pulse test
1.5
0.1
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
10
1
Common source
Tc
= 25C
Pulse test
VGS = 0, -1 V
10
5
3
0.1 1 10 100
10
100
1000
0.3 0.5
3
5
30 50
30
50
300
500
3000
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
Ciss
Coss
Crss
0
1
2
3
5
-80
-40
0
40
80
120
160
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
0 40 80
120
160
200
10
20
30
40
50
0
0
10
40
50
20
4
8
12
16
20
0
100
200
300
400
500
30
Common source
ID = 6 A
Tc
= 25C
Pulse test
VDD = 100 V
200
400
VDS
VGS
2SK3130
2004-07-06
5
r
th
- t
w
Pulse width tw (s)
N
o
r
m
aliz
ed
t
r
an
s
i
e
n
t
t
h
e
r
m
a
l
i
m
peda
nc
e
r th
(t)
/R
th (c
h-c
)
Drain-source voltage VDS (V)
Safe operating area
Drai
n
cu
rre
nt
I D
(A
)
Channel temperature (initial) Tch (C)
E
AS
- T
ch
A
v
al
a
n
c
h
e
en
er
gy E
AS
(m
J)
0.001
10
100
1
m
0.01
0.1
1
10
0.01
0.1
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125C/W
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.01
1
0.1
1
10
10 100
1000
100
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
ID max (pulsed) *
ID max (continuous)
DC operation Tc
= 25C
100
s *
1 ms *
VDSS max
0
25
50
75
100 150
125
100
200
300
400
500
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 16.8 mH
-
=
DD
V
VDSS
B
VDSS
B
2
I
L
2
1
AS
E
2SK3130
2004-07-06
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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