2SK3131
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3131
Chopper Regulator DC-DC Converter and Motor Drive
Applications
Fast reverse recovery time
: t
rr
= 105 ns (typ.)
Built-in high-speed free-wheeling diode
Low drain-source ON resistance
: R
DS (ON)
= 0.085 (typ.)
High forward transfer admittance
: |Y
fs
| = 35 S (typ.)
Low leakage current
: I
DSS
= 100 A (max) (V
DS
= 500 V)
Enhancement mode
: V
th
= 2.4~3.4 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
500 V
Gate-source voltage
V
GSS
30
V
DC (Note
1)
I
D
50 A
DC Drain current
Pulse (Note 1)
I
DP
200 A
Drain power dissipation (Tc
= 25C)
P
D
250 W
Single pulse avalanche energy
(Note
2)
E
AS
525 mJ
Avalanche current
I
AR
50 A
Repetitive avalanche energy (Note 3)
E
AR
25 mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.5 C
/
W
Thermal resistance, channel to
ambient
R
th
(ch-a)
35.7 C
/
W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: V
DD =
90 V, T
ch
= 25C (initial), L = 357 H, R
G
= 25 , I
AR
= 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC --
JEITA --
TOSHIBA 2-21F1B
Weight: 9.75 g (typ.)
2SK3131
2004-07-06
2
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V
, V
DS
= 0 V
-- -- 10 A
Gate-source breakdown voltage
V
(BR) GSS
I
G
= 100 A
, V
DS
= 0 V
30 -- -- V
Drain cut-off current
I
DSS
V
DS
= 500 V
, V
GS
= 0 V
-- -- 100 A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
, V
GS
= 0 V
500 -- -- V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.4 -- 3.4 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 25 A
-- 0.085 0.11
Forward transfer admittance
|Y
fs
| V
DS
= 10 V,
I
D
= 25 A
15 35 -- S
Input capacitance
C
iss
-- 11000 --
Reverse transfer capacitance
C
rss
--
2100
--
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-- 4200 --
pF
Rise
time
tr
-- 105 --
Turn-on time
t
on
-- 160 --
Fall time
t
f
--
65
--
Switching time
Turn-off time
t
off
-- 245 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
-- 280 --
Gate-source charge
Q
gs
-- 150 --
Gate-drain ("miller") charge
Q
gd
V
DD
400 V, V
GS
= 10 V, I
D
= 50 A
-- 130 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
-- --
--
50
A
Pulse drain reverse current
(Note
1)
I
DRP
-- --
--
200
A
Forward voltage (diode)
V
DSF
V
DR
= 25 A, V
GS
= 0 V
-- -- -1.7 V
Reverse recovery time
t
rr
-- 105 -- ns
Reverse recovery charge
Q
rr
I
DR
= 50 A, V
GS
= 0 V
dI
DR
/ dt
= 100 A / s
-- 380 -- nC
Marking
2SK3131
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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