2SK3342
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3342
Switching Regulator Applications DC-DC Converter, and
Motor Drive Applications
l Low drain-source ON resistance
: R
DS (ON)
= 0.8 (typ.)
l High forward transfer admittance
: |Y
fs
| = 4.5 S (typ.)
l Low leakage current
: I
DSS
= 100 A (max) (V
DS
= 250 V)
l Enhancement-mode :
V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
250 V
Drain-gate voltage (R
GS
= 20 k
)
V
DGR
250 V
Gate-source voltage
V
GSS
20
V
DC (Note
1)
I
D
4.5 A
Drain current
Pulse (Note 1)
I
DP
18 A
Drain power dissipation (Tc
= 25C)
P
D
20 W
Single pulse avalanche energy
(Note
2)
E
AS
51 mJ
Avalanche current
I
AR
4.5 A
Repetitive avalanche energy (Note 3)
E
AR
2.0 mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25 C
/
W
Thermal resistance, channel to
ambient
R
th
(ch-a)
125 C
/
W
Note 1: Please use devices on condition that the channel temperature is
below 150C.
Note 2: V
DD =
50 V, T
ch
= 25C (initial), L = 4.28 mH, R
G
= 25 ,
I
AR
= 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SK3342
2002-01-25
2
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V
, V
DS
= 0 V
-- -- 10
A
Drain cut-off current
I
DSS
V
DS
= 250 V
, V
GS
= 0 V
-- -- 100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
, V
GS
= 0 V
250 -- -- V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
1.5 -- 3.5 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 2.5 A
-- 0.8 1.0
Forward transfer admittance
|Y
fs
| V
DS
= 10 V,
I
D
= 2.5 A
2.0 4.5 -- S
Input capacitance
C
iss
-- 440 --
Reverse transfer capacitance
C
rss
--
35
--
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
-- 120 --
pF
Rise time
tr
--
15
--
Turn-on time
t
on
--
20
--
Fall time
t
f
--
15
--
Switching time
Turn-off time
t
off
-- 60 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
--
10
--
Gate-source charge
Q
gs
-- 6 --
Gate-drain ("miller") charge
Q
gd
V
DD
100 V, V
GS
= 10 V, I
D
= 4.5 A
-- 4 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
-- --
--
4.5
A
Pulse drain reverse current
(Note
1)
I
DRP
-- --
--
18
A
Forward voltage (diode)
V
DSF
I
DR
= 4.5 A, V
GS
= 0 V
-- -- -2.0
V
Reverse recovery time
t
rr
-- 110 -- ns
Reverse recovery charge
Q
rr
I
DR
= 4.5 A, V
GS
= 0 V
dI
DR
/ dt = 100 A / s
-- 0.47 -- C
Marking
2SK3342
2002-01-25
3
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000707EAA
RESTRICTIONS ON PRODUCT USE
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