2SK3403
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3403
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.29 (typ.)
High forward transfer admittance: |Y
fs
| = 5.8 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DSS
= 450 V)
Enhancement-mode: V
th
= 3.0~5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
450 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
450 V
Gate-source voltage
V
GSS
30 V
DC (Note
1) I
D
13
Drain current
Pulse (Note
1)
I
DP
52
A
Drain power dissipation (Tc
= 25C)
P
D
100 W
Single pulse avalanche energy
(Note
2)
E
AS
350 mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy (Note 3)
E
AR
10
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.25
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use device on condition that the channel temperature is
below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 3.46 mH, R
G
= 25 W,
I
AR
= 13 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)
2SK3403
2002-09-02
2
Electrical Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Gate-source breakdown voltage
V
(BR) GSS
I
G
= 10 mA, V
DS
= 0 V
30
V
Drain cut-off current
I
DSS
V
DS
= 450 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
450
550
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
3.0
5.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 6 A
0.29 0.4 W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 6 A
3.0
5.8
S
Input capacitance
C
iss
1600
Reverse transfer capacitance
C
rss
17
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
220
pF
Rise time
t
r
28
Turn-on time
t
on
45
Fall time
t
f
10
Switching time
Turn-off time
t
off
56
ns
Total gate charge
Q
g
34
Gate-source charge
Q
gs
19
Gate-drain charge
Q
gd
V
DD
~
- 360 V, V
GS
= 10 V, I
D
= 13 A
15
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
13 A
Pulse drain reverse current
(Note 1)
I
DRP
52 A
Forward voltage (diode)
V
DSF
I
DR
= 13 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
300 ns
Reverse recovery charge
Q
rr
I
DR
= 13 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
3.4
mC
Marking
Type
K3403
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
=
33.3
W
V
DD
~
- 200 V
I
D
= 6 A
Output
10
9
2SK3403
2002-09-02
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
8
0
0
2
4
6
10
2 4
8
6 10
VGS = 6.0 V
7.25
7.5
10
15
Common source
Tc
= 25C
Pulse test
6.5
7.0
20
16
12
8
4
0
0 10 20 30 40 50
VGS = 6 V
Common source
Tc
= 25C
Pulse test
7
7.5
15
10
8.25
8.5
8
6.5
0
30
10
20
3 9
6 12
Common source
VDS = 20 V
Pulse test
Tc
= -55C
25
100
0
2
4
8
10
0
ID = 13 A
4 8 12
20
3
6
Common source
Tc
= 25C
Pulse test
16
6
10
100
10
1
0.1
1
0.1
Common source
Tc
= 25C
Pulse test
VGS = 10 V
15
Common source
VDS = 20 V
Pulse test
25
100
Tc
= -55C
0.1 1 10 100
50
10
1
0.1
2SK3403
2002-09-02
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
160
0
1
3
2
6
5
4
-80
-40 0 40 80 120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
40
120
80
200
160
200
0 40 80 120
160
500
400
0
100
200
300
0 10 20 30
50
40
Common source
ID = 13 A
Tc
= 25C
Pulse test
VDS
360
180
VGS
VDD = 90 V
0
4
8
12
20
16
0
-0.4
0.1
1
10
100
-0.6
-0.8
-1.2
-0.2
-1
10
1
3
VGS = 0, -1 V
Common source
Tc
= 25C
Pulse test
5
1
0.1
10
100
1000
10000
1 10 100
1000
Common
source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
Ciss
Coss
Crss
1.0
0.6
0
-80
-40 0 40 80
160
120
0.2
0.4
ID = 13 A
0.8
3
6
Common source
VGS = 10 V
Pulse test
2SK3403
2002-09-02
5
D
r
ai
n
cu
rre
nt
I D
(A
)
Channel temperature (initial) Tch (C)
A
v
al
anc
he
en
er
gy E
AS
(mJ
)
r
th
t
w
Pulse width t
w
(S)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 3.46 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
Drain-source voltage V
DS
(V)
E
AS
T
ch
Safe operating area
100
200
300
50 100
0
400
25 75
150
125
0.1
10
m 100
m
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.25C/W
Duty
= 0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.01
0.03
0.05
1
0.3
0.5
3
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
DC operation
Tc
= 25C
100
ms *
1 ms *
VDSS max
0.05
0.1
1
10
100
0.03
0.5
0.3
5
3
50
30
30
10 100 1000
300
3
ID max (pulse) *
ID max
(continuous)
2SK3403
2002-09-02
6
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
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Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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rights of the third parties which may result from its use. No license is granted by implication or otherwise under
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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