2SK3437
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3437
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON resistance: R
DS (ON)
= 0.74 (typ.)
High forward transfer admittance: |Y
fs
| = 4.5 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 600 V)
Enhancement mode: V
th
= 3.0~5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage
V
GSS
30 V
DC (Note 1)
I
D
10
Drain current
Pulse
(Note
1) I
DP
30
A
Drain power dissipation (Tc
= 25C)
P
D
80 W
Single pulse avalanche energy
(Note
2)
E
AS
252 mJ
Avalanche current
I
AR
10 A
Repetitive avalanche energy (Note 3)
E
AR
8
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.56
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 4.41 mH, R
G
= 25 ,
I
AR
= 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)
2SK3437
2004-07-06
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
= 10 A, V
DS
= 0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100 A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
600
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
3.0
5.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 5 A
0.74 1.0
Forward transfer admittance
Y
fs
V
DS
= 15 V, I
D
= 5 A
2.0
4.5
S
Input capacitance
C
iss
1200
Reverse transfer capacitance
C
rss
10
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
130
pF
Rise time
t
r
13
Turn-ON time
t
on
40
Fall time
t
f
8
Switching time
Turn-OFF time
t
off
50
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
28
Gate-source charge
Q
gs
16
Gate-drain ("miller") charge
Q
gd
V
DD
- 400 V, V
GS
= 10 V, I
D
= 10 A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
10 A
Pulse drain reverse current
(Note 1)
I
DRP
30 A
Forward voltage (diode)
V
DSF
I
DR
= 10 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
1600 ns
Reverse recovery charge
Q
rr
I
DR
= 10 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/s
17
C
Marking
Duty <= 1%, t
w
= 10 s
0 V
10 V
V
GS
R
L
= 60
V
DD
- 300 V
I
D
= 5 A
V
OUT
10
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3437
Part No. (or abbreviation code)
2SK3437
2004-07-06
3
F
o
rw
ard
t
r
an
s
f
er
adm
it
t
a
c
n
e
Y
fs
(
S
)
D
r
ain-s
our
c
e
v
o
lt
age
V
DS
(V)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
a
i
n
c
u
rr
ent
I
D
(
A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
a
i
n
c
u
rr
ent
I
D
(
A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
a
i
n
c
u
rr
ent
I
D
(A)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ain-s
o
ur
c
e
o
n
re
s
i
s
t
a
n
c
e
R
DS
(
O
N
)
(
)
8
0
0
2
4
6
10
4 8
16
12 20
VGS = 6.0 V
6.5
Common source
Tc
= 25C
Pulse test
6.75
7.0
7.25
7.5
7.75
10
15
20
16
12
8
4
0
0 10 20 30 40 50
VGS = 6.0 V
6.5
Common source
Tc
= 25C
Pulse test
7.0
7.25
7.5
8.0
8.5
10
15
0
0 2 4 6 8 10
2
4
6
8
10
12
Common source
VDS = 20 V
Pulse test
Tc
= -55C
100
25
20
16
12
8
4
0
0 4 8 12 16 20
Common source
Tc
= 25C
Pulse test
ID = 10 A
5
2.5
0.1
0.1 1 10 100
1
10
100
Common source
Tc
= 25C
Pulse test
VGS = 10, 15 V
0.1
0.1 1 10 100
1
10
100
Tc
= -55C
Common source
VDS = 20 V
Pulse test
25
100
2SK3437
2004-07-06
4
D
r
ain Po
w
e
r
di
s
s
i
p
a
t
ion
P
D
(W
)
G
a
te
th
r
e
sh
o
l
d
vo
l
t
a
g
e
V
th
(V)
Channel temperature Tc (C)
R
DS (ON)
Tc
D
r
ain-s
o
ur
c
e
o
n
re
s
i
s
t
a
n
c
e
R
DS
(
O
N
)
(
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ain r
e
v
e
r
s
e
c
u
rr
ent
I
DR
(A
)
Drain-source Voltage V
DS
(V)
Capacitance V
DS
C
a
pac
it
a
n
c
e C
(
p
F
)
Channel temperature Tc (C)
V
th
Tc
Channel temperature Tc (C)
P
D
Tc
Gat
e
-
s
our
c
e
v
o
l
t
ag
e
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
a
i
n-s
o
u
r
c
e
V
o
l
t
age V
DS
(
V
)
0
20
60
40
100
80
200
0 40 80 120
160
0.1
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
1
10
100
Common source
Tc
= 25C
Pulse test
VGS = 0, -1 V
1
3
5
10
0
-80
-40 0 40 80 120 160
1
2
3
4
5
6
Common source
VDS = 10 V
ID = 1 mA
Pulse test
20
16
12
8
4
0
1
0.1 1 10 100
1000
10
100
1000
10000
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
0
0 10 20 30 40
100
200
300
400
500
VDD = 100 V
VDS
VGS
400
200
Common source
ID = 10 A
Tc
= 25C
Pulse test
0
-80
-40 0 40 80 120 160
0.5
1.0
1.5
2.0
2.5
Common source
VGS = 10 V
Pulse test
ID = 10 A
5
2.5
2SK3437
2004-07-06
5
Pulse width tw (S)
r
th
- t
w
E
AS
T
ch
Channel temperature (initial) Tch (C)
N
o
rm
aliz
ed
t
r
an
s
i
en
t
t
h
erm
a
l
im
peda
nc
e
r
th (
t
)
/R
th (c
h-
a)
A
v
al
anc
he
en
er
gy
E
AS
(
m
J
)
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 4.41 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
Safe operating area
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
100
200
300
50 100
0
400
25 75
150
125
0.01
1
10 100
1000
0.1
1
100
100
s *
1 ms *
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
10
VDSS max
DC operation
Tc
= 25C
ID max (pulsed) *
ID max (continuous) *
0.001
1
0.1
10
100
10
1 m
10 m
100 m
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
Duty
= 0.5
0.01
2SK3437
2004-07-06
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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