2SK3476
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Output power: P
O
= 7.0 W (min)
Gain: G
P
= 11.4dB (min)
Drain efficiency:
D
= 60% (min)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
20 V
Gain-source voltage
V
GSS
5 V
Drain current
I
D
3
A
Power dissipation
P
D
(Note 1)
20
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-45~150 C
Note 1: Tc = 25C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution
Please take care to avoid generating static electricity when handling this transistor.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-5N1A
Type name
1
UC F
2
3
1. Gate
2. Source (heat sink)
3. Drain
**
Lo No.
Dot
2SK3476
2002-01-09
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain cut-off current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
5 mA
Gate-source leakage current
I
GSS
V
GS
= 10 V
5 mA
Threshold voltage
V
th
V
DS
= 7.2 V, I
D
=
2
mA
0.55 1.05 1.55
V
Drain-source on-voltage
V
DS (ON)
V
GS
= 10 V, I
D
= 75 mA
18 mV
Forward transconductance
Y
fs
V
DS
= 7.2 V, I
DS
= 1 A
1 S
Input capacitance
C
iss
V
DS
= 7.2 V, V
GS
= 0 V, f = 1 MHz
53 pF
Output capacitance
C
oss
V
DS
= 7.2 V, V
GS
= 0 V, f = 1 MHz
49 pF
Output power
P
O
7
W
Drain efficiency
h
D
60
%
Power gain
G
P
V
DS
= 7.2 V,
I
idle
= 500 mA (V
GS
= adjust),
f
= 520 MHz, P
i
= 500 mW,
11.4
dB
Low voltage output power
P
OL
V
DS
= 6.0 V,
I
idle
= 500 mA (V
GS
= adjust),
f
= 520 MHz, P
i
= 500 mW,
5
W
Load mismatch
V
DS
= 10 V, P
O
= 7 W,
V
GS
= adjust, P
i
= adjust,
f
= 520 MHz,
VSWR LOAD 20:1 all phase
No degradation
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f
=
=
=
=
520 MHz, V
DS
=
=
=
=
7.2 V, I
idle
=
=
=
=
500 mA, P
i
=
=
=
=
500 mW)
P
i
P
O
C1
C2
C9
Z
G
= 50 W
C4
C12
C13
L1
R2
C14
C15
L2
V
GS
V
DS
C10
Z
L
= 50 W
C1: 15 pF
C2: 11 pF
C3: 9 pF
C4: 30 pF
C5: 30 pF
C6: 11 pF
C7: 8 pF
C8: 9 pF
C9: 2200 pF
C10: 2200 pF
C11: 2200 pF
C12: 10000 pF
C13: 10
mF
C14: 10000 pF
C15: 10
mF
L1:
f0.6 mm enamel wire, 5.8ID, 4T
L2:
f0.6 mm enamel wire, 5.8ID, 8T
R1: 2.2
W
R2: 1.5 k
W
C3
R1
C11
C5
C6
C7
C8
2SK3476
2002-01-09
3
Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.
1000
400
0
100
60
40
20
0
80
200 600
800
f
= 520 MHz
VDS = 7.2 V
Iidle = 500 mA
Tc
= 100C
25C
-20C
60C
1000
400
0
12
6
4
2
0
10
200 600
800
f
= 520 MHz
VDS = 7.2 V
Iidle = 500 mA
Tc
= 100C
60C
8
-20C
25C
Outp
ut pow
er
P
O
(W
)
D
r
ai
n
ef
fi
ci
en
cy
D
D
(%
)
Input power P
i
(mW)
P
O
P
i
Outp
ut pow
er
P
O
(W
)
Input power P
i
(mW)
P
O
P
i
Outp
ut pow
er
P
O
(W
)
Input power P
i
(mW)
h
D
P
i
D
r
ai
n
ef
fi
ci
en
cy
D
D
(%
)
Input power P
i
(mW)
h
D
P
i
Input power P
i
(mW)
P
O
P
i
Input power P
i
(mW)
h
D
P
i
D
r
ai
n
ef
fi
ci
en
cy
D
D
(%
)
1000
400
0
12
6
4
2
0
10
200 600
800
f
= 520 MHz
VDS = 7.2 V
Tc
= 25C
Iidle = 300 mA
700 mA
500 mA
8
1000
400
0
20
10
5
0
15
200 600
800
f
= 520 MHz
Iidle = 500 mA
Tc
= 25C
VDS = 6.0 V
7.2 V
9.6 V
1000
400
0
100
60
40
20
0
80
200 600
800
f
= 520 MHz
VDS = 7.2 V
Tc
= 25C
Iidle = 300 mA
500 mA
700 mA
1000
400
0
100
60
40
20
0
80
200 600
800
f
= 520 MHz
Iidle = 500 mA
Tc
= 25C
VDS = 6.0 V
7.2 V
9.6 V
2SK3476
2002-01-09
4
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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