2SK3561
2005-01-26
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3561
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.75 (typ.)
High forward transfer admittance: |Y
fs
| = 6.5S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
500 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
8
Drain current
Pulse (t
= 1 ms)
(Note
1) I
DP
32
A
Drain power dissipation (Tc
= 25C)
P
D
40 W
Single pulse avalanche energy
(Note
2)
E
AS
312 mJ
Avalanche current
I
AR
8 A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25C(initial), L = 8.3 mH, I
AR
= 8 A, R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK3561
2005-01-26
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
= 10 A, V
DS
= 0 V
30
V
Drain cut-off current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100 A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 4 A
0.75 0.85
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 4 A
3.0
6.5
S
Input capacitance
C
iss
1050
Reverse transfer capacitance
C
rss
10
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
110
pF
Rise time
t
r
26
Turn-on time
t
on
45
Fall time
t
f
38
Switching time
Turn-off time
t
off
130
ns
Total gate charge
Q
g
28
Gate-source charge
Q
gs
16
Gate-drain charge
Q
gd
V
DD
- 400 V, V
GS
= 10 V, I
D
= 8 A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
8 A
Pulse drain reverse current
(Note 1)
I
DRP
32 A
Forward voltage (diode)
V
DSF
I
DR
= 8 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
1200 ns
Reverse recovery charge
Q
rr
I
DR
= 8 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/s
10
C
Marking
R
L
=
50
0 V
10
V
V
GS
V
DD
- 200 V
I
D
= 4 A
V
OUT
50
Duty <= 1%, t
w
= 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3561
Part No. (or abbreviation code)
2SK3561
2005-01-26
3
Y
fs
I
D
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
V
GS
0
0
2
4
6
8
4
20
Tc
= -55C
25
100
8
12
16
GATE-SOURCE VOLTAGE V
GS
(V)
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
COMMON SOURCE
VDS = 20 V
PULSE TEST
10
DR
A
I
N
-
S
O
URC
E
V
O
L
T
A
G
E
V
DS
(V)
V
DS
V
GS
COMMON SOURCE
Tc
= 25
PULSE TEST
0
4
6
8
10
0
ID = 8 A
4
8
12
16
20
2
4
2
DRAIN CURRENT I
D
(A)
F
O
R
W
AR
D
T
R
AN
SF
E
R
A
D
M
I
T
T
A
N
C
E
Y
fs
(S
)
0.1
10
100
0.1 1
100
10
1
16
12
8
4
0
20
0 20 40
50
VGS = 4 V
4.5
5
5.5
1015
6
30
10
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DR
A
I
N
C
URR
E
N
T
I
D
(
A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
10
8
4
2
0
0 2 4 6 8 10
VGS = 4 V
4.25
4.5
4.75
5
5.25
6
1015
6
R
DS (ON)
I
D
0.1
0.1
1
10
100
1
10
VGS = 10 V15V
DRAIN CURRENT I
D
(A)
D
R
A
I
N-
S
O
UR
CE
O
N
RE
S
I
S
T
A
N
CE
R
DS
(
O
N
)
(
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
25
100
Tc
= -55C
25
100
Tc
= -55C
COMMON SOURCE
VDS
= 10 V
PULSE TEST
2SK3561
2005-01-26
4
R
DS (ON)
Tc
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE V
DS
C
A
P
A
CI
T
A
NC
E
C
(
p
F
)
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25C
1
0.1
10
100
1000
10000
1 10 100
Ciss
Coss
Crss
160
-40 0 40 80 120
-80
2.0
1.6
1.2
0.8
0.4
0
ID = 8 A
2
4
CASE TEMPERATURE Tc (C)
D
R
A
I
N-
S
O
UR
CE
O
N
RE
S
I
S
T
A
N
CE
R
DS (
O
N)
(
)
COMMON SOURCE
VGS = 10 V
PULSE TEST
DR
A
I
N
P
O
WE
R
D
I
S
S
IP
A
T
IO
N
P
D
(W
)
CASE TEMPERATURE Tc (C)
P
D
Tc
60
0
0 40 80 120
160
20
40
I
DR
V
DS
DRAIN-SOURCE VOLTAGE V
DS
(V)
DR
A
I
N
R
E
V
E
RS
E
CU
RRE
N
T
I
DR
(A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
0
0.1
-0.2
1
10
100
-0.4
-0.6
-0.8
VGS = 0, -1 V
10
3
1
5
-1.0
-1.2
TOTAL GATE CHARGE Q
g
(nC)
GA
T
E
-S
OU
R
C
E
V
O
L
T
A
G
E
V
GS
(
V
)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DR
A
I
N
-
S
O
URC
E
V
O
L
T
A
G
E
V
DS
(V)
COMMON SOURCE
ID = 8 A
Tc
= 25C
PULSE TEST
0 10 20
VDD = 100 V
VDS
VGS
400
200
30
50
40
500
400
300
200
100
0
20
16
12
8
4
0
V
th
Tc
G
A
T
E
T
H
R
E
S
H
O
L
D
VO
L
T
AG
E
V
th
(
V
)
CASE TEMPERATURE Tc (C)
0
1
2
3
5
-80
-40 0 40 80 120 160
4
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
2SK3561
2005-01-26
5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
A
V
A
L
AN
C
H
E
EN
E
R
GY
E
AS
(
m
J
)
r
th
t
w
PULSE WIDTH t
w
(s)
0.01
10
0.1
1
10
100
1 10
100
1 10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
N
O
R
M
ALI
Z
ED
T
R
AN
SI
EN
T
T
H
E
R
M
A
L
I
M
PED
A
N
C
E
r
th (t)
/R
th (c
h-c
)
SINGLE PULSE
-15 V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 8.3mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
500
400
300
200
100
0
25 50 75 100 125 150
0.01
1
0.1
1
10
100
10 1000
100
100
s *
1 ms *
VDSS max
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
DC OPERATION
Tc
= 25C
2SK3561
2005-01-26
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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