2SK3667
2004-12-07
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3667
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.75 (typ.)
High forward transfer admittance: |Y
fs
| = 5.5S (typ.)
Low leakage current: I
DSS
= 100A (V
DS
= 600 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
7.5
Drain current
Pulse (t
= 1 ms)
(Note
1) I
DP
30
A
Drain power dissipation (Tc
= 25C)
P
D
45 W
Single pulse avalanche energy
(Note
2)
E
AS
189 mJ
Avalanche current
I
AR
7.5 A
Repetitive avalanche energy (Note 3)
E
AR
4.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.78
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 5.88 mH, I
AR
= 7.5 A, R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK3667
2004-12-07
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=10 A, V
DS
= 0 V
30
V
Drain cut-off current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100 A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
600
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 4 A
0.75 1.0
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 4 A
1.5
5.5
S
Input capacitance
C
iss
1300
Reverse transfer capacitance
C
rss
12
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
120
pF
Rise time
t
r
20
Turn-on time
t
on
50
Fall time
t
f
35
Switching time
Turn-off time
t
off
150
ns
Total gate charge
Q
g
33
Gate-source charge
Q
gs
18
Gate-drain charge
Q
gd
V
DD
- 400 V, V
GS
= 10 V, I
D
= 7.5 A
15
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
7.5 A
Pulse drain reverse current
(Note 1)
I
DRP
30 A
Forward voltage (diode)
V
DSF
I
DR
= 7.5 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
1200 ns
Reverse recovery charge
Q
rr
I
DR
= 7.5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/s
12
C
Marking
R
L
= 50
0 V
10
V
V
GS
V
DD
- 200 V
I
D
= 4 A
V
OUT
50
Duty <= 1%, t
w
= 10 s
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3667
Part No. (or abbreviation code)
2SK3667
2004-12-07
3
10
6
4
0
8
2
0 4 8 12
16
VGS = 4V
4.5
5
4.75
5.25
6
10,8
20
5.5
16
12
8
4
0
20
0 20
50
4.5
4.75
5.25
10
5
40
30
10
8
6
VGS = 4 V
5.5
0
0
2
4
6
8
10
8
20
Tc
= -55C
25
100
12
4
16
0
6
8
10
0
ID = 10 A
4
12
16
20
2.5
5
4
2
8
0.1
1
100
0.1
1
100
25
100
Tc
= -55C
10
10
0.1
0.1
1
100
10
VGS = 10 V15V
10
1
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
DRAIN CURRENT I
D
(A)
R
DS (ON)
I
D
D
R
A
I
N-
S
O
UR
CE
O
N
RE
S
I
S
T
A
N
CE
R
DS
(
O
N
)
(
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
DRAIN CURRENT I
D
(A)
Y
fs
I
D
COMMON SOURCE
VDS
= 20 V
PULSE TEST
F
O
R
W
AR
D
T
R
AN
SF
E
R
A
D
M
I
T
T
A
N
C
E
Y
fs
(S
)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DR
A
I
N
C
URR
E
N
T
I
D
(
A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
V
GS
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
COMMON SOURCE
VDS = 20 V
PULSE TEST
DR
A
I
N
-
S
O
URC
E
V
O
L
T
A
G
E
V
DS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
V
GS
COMMON SOURCE
Tc
= 25
PULSE TEST
2SK3667
2004-12-07
4
1
0.1
10
100
1000
10000
1 10
100
Ciss
Coss
Crss
160
-40 0 40 80 120
-80
4
3
2
1
0
ID = 7.5A
2
4
0
1
2
3
5
-80
-40 0 40 80 120 160
4
0
0.1
-0.2
1
10
100
-0.6
-0.8
-1.2
VGS = 0, -1 V
10
5
1
3
-0.4
-1.0
0 10
30
VDD = 100 V
VDS
VGS
400
200
40
50
500
200
100
300
400
0
20
20
8
4
12
16
0
60
0
0 40 80 120
160
20
40
200
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE V
DS
C
A
P
A
CI
T
A
NC
E
C
(
p
F
)
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25C
DR
A
I
N
P
O
WE
R
D
I
S
S
IP
A
T
IO
N
P
D
(W
)
CASE TEMPERATURE Tc (C)
P
D
Tc
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
DR
V
DS
DR
A
I
N
R
E
V
E
R
S
E
CU
RRE
N
T
I
DR
(
A
)
COMMON SOURCE
Tc
= 25C
PULSE TEST
G
A
T
E
T
H
R
E
S
H
O
L
D
VO
L
T
AG
E
V
th
(
V
)
CASE TEMPERATURE Tc (C)
V
th
Tc
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
CASE TEMPERATURE Tc (C)
R
DS (ON)
Tc
D
R
A
I
N-
S
O
UR
CE
O
N
RE
S
I
S
T
A
N
CE
R
DS (
O
N)
(
)
COMMON SOURCE
VGS = 10 V
PULSE TEST
GA
T
E
-S
OU
R
C
E
V
O
L
T
A
G
E
V
GS
(
V
)
TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DR
A
I
N
-
S
O
URC
E
V
O
L
T
A
G
E
V
DS
(V)
COMMON SOURCE
ID = 7.5 A
Tc
= 25C
PULSE TEST
2SK3667
2004-12-07
5
400
300
200
100
0
25 50 75 100 125 150
0.01
0.1
1
10
0.001
10
100
1 10
100
1 10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 2.78C/W
0.2
0.1
0.02
0.01
0.05
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
A
V
A
L
AN
C
H
E
EN
E
R
GY
E
AS
(
m
J
)
r
th
t
w
PULSE WIDTH t
w
(s)
N
O
R
M
ALI
Z
ED
T
R
AN
SI
EN
T
T
H
E
R
M
A
L
I
M
PED
A
N
C
E
r
th (t)
/R
th (c
h-c
)
Duty=0.5
SINGLE PULSE
-15 V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 5.88mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
0.1
1
1
10
100
10 1000
100
0.01
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DC OPERATION
Tc
= 25C
100
s *
1 ms *
VDSS max
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
2SK3667
2004-12-07
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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