2SK3669
2003-03-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII)
2SK3669
Switching Regulators, for Audio Amplifier and Motor
Drive Applications
Low drain-source ON resistance: R
DS
(ON)
= 95 m (typ.)
High forward transfer admittance: |Y
fs
| = 6 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 100 V)
Enhancement-mode : V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
100 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
100
V
Gate-source voltage
V
GSS
20 V
DC (Note
1) I
D
10
Pulse (t
w
10 ms)
(Note
1)
I
DP
15
Drain current
Pulse (t
w
1 ms)
(Note
1)
IDP 28
A
Drain power dissipation (Tc
= 25C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
280
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy
(Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
C/
W
Thermal resistance, channel to
ambient
R
th (ch-a)
125
C/
W
Note 1: Please use devices on condition that the channel temperature is
below 150C.
Note 2: V
DD
= 50 V, T
ch
= 25C (initial), L = 3.44 mH, I
AR
= 10 A, R
G
= 25 W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SK3669
2003-03-12
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
100
nA
Drain cut-off current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
100
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
3.0
5.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 5 A
95 125
m
W
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 5 A
3
6
S
Input capacitance
C
iss
480
Reverse transfer capacitance
C
rss
9
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
220
pF
Rise time
t
r
2
Turn-on time
t
on
12
Fall time
t
f
2
Switching time
Turn-off time
t
off
Duty 1%, t
w
= 10 ms
12
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
8.0
Gate-source charge
Q
gs
5.6
Gate-drain ("miller") charge
Q
gd
V
DD
80 V, V
GS
= 10 V,
I
D
= 10 A
2.4
nC
Source-Drain Diode Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
10 A
Pulse drain reverse current
(t
w
10 ms) (Note 1)
I
DRP
15 A
Pulse drain reverse current
(t
w
1 ms) (Note 1)
I
DRP
28 A
Forward voltage (diode)
V
DS2F
I
DR1
= 10 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
65 ns
Reverse recovery charge
Q
rr
I
DR
= 10 A, V
GS
= 0 V,
dI
DR
/dt
= 50 A/ms
90 nC
Marking
Type
K3669
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
0 V
10
V
V
GS
R
L
=
5
W
V
DD
50 V
I
D
= 10 A
V
OUT
50
2SK3669
2003-03-12
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(m
W
)
9.5
0
0
8
20
10
4
4
12
16
Common source
Tc
= 25C
Pulse test
2
6
8
15
10
VGS = 6.5 V
9
8.5
8
7.5
16
0
0
4
8
12
20
4 8
16
12 20
Ta
= -55C
Common source
VDS = 10 V
Pulse test
25
100
0.1
0.1
1
10
100
1
10
50
30
3
5
0.3
0.5
Tc
= -55C
100
25
Common source
VDS = 10 V
Pulse test
0.01
0.1
1
10
100
0.1
1
5
3
0.3
0.5
0.03
0.05
VGS = 10 V
15
Common source
Tc
= 25C
Pulse test
10
15
0
0
4
2.0
2
6
8
Common source
Tc
= 25C
Pulse test
0.4
1.2
1.6
VGS = 6.5 V
8.5
7
9
10
0.8
8
7.5
5
2.5
1.6
0
0
0.4
0.8
1.2
2.0
4
8
16
12 20
Common source
Tc
= 25C
Pulse test
100
ID = 10 A
2SK3669
2003-03-12
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
m
W
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
10
0
-80
160
80
-40
40
2
6
0
120
4
8
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
40
80
120
160
0
5
15
20
25
10
10
25
5
15
20
VDS
0
5
10
15
20
0
20
60
80
100
40
0
VGS
Common source
ID = 10 A
VDD = 80 V
Tc
= 25C
Pulse test
3
0.1
10
100
100
1000
3000
300
500
30
50
Coss
Ciss
Crss
Common source
Tc
= 25C
f
= 1 MHz
VGS = 0 V
10
5
300
30
1
3
0.3
0.1
0
2.5
1.5
0.5
10
100
1
2
1
VGS = 0, -1 V
1
3
10
Common source
Tc
= 25C
Pulse test
150
0
-80
-40
0
40
120
160
80
50
100
200
250
Common source
VGS = 10 V
Pulse test
ID = 10 A
5 A
2.5
2SK3669
2003-03-12
5
Pulse width t
w
(S)
r
th
t
w
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
Drain-source voltage V
DS
(V)
Safe operating area
D
r
ai
n
cu
rre
nt
I D
(A
)
0.1
0.01
10
m 100
m
3
1 m
10 m
100 m
1
10
0.003
Single pulse
0.2
0.1
0.05
0.02
0.01
Duty
= 0.5
T
PDM
t
Duty
= t/T
Rth (ch-c) = 6.25C/W
1
A
v
al
anc
he
en
er
gy E
AS
(
m
J
)
Channel temperature (initial) T
ch
(C)
E
AS
T
ch
R
G
= 25 W
V
DD
= 50 V, L = 3.44 mH
-
=
VDD
BVDSS
BVDSS
AS
2
I
L
2
1
Waveform
I
AR
B
VDSS
V
DD
V
DS
Test circuit
-15 V
15
V
300
240
180
120
60
0
25 50 75 100 125 150
0.01
0.3 1 3
100
300
0.03
0.05
0.1
0.3
0.5
1
3
5
10
100
0.1 10
30
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
VDSS max
100
ms*
1 ms*
10 ms*
ID max (pulsed)*
ID max (continuous)
2SK3669
2003-03-12
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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