GT30J324
2002-04-19
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications
Fast Switching Applications
The 4th generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
f
= 0.05 s (typ.)
Low switching loss : E
on
= 1.00 mJ (typ.)
:
E
off
= 0.80 mJ (typ.)
Low saturation voltage: V
CE (sat)
= 2.0 V (typ.)
FRD included between emitter and collector
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600 V
Gate-emitter voltage
V
GES
20 V
DC I
C
30
Collector current
1 ms
I
CP
60
A
DC I
F
30
Emitter-collector forward
current
1 ms
I
FM
60
A
Collector power dissipation
(Tc = 25C)
P
C
170
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance (IGBT)
R
th (j-c)
0.735 C/W
Thermal resistance (diode)
R
th (j-c)
1.90 C/W
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-16C1C
Weight: 4.6 g (typ.)
Gate
Emitter
Collector
GT30J324
2002-04-19
2
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500
nA
Collector cut-off current
I
CES
V
CE
= 600 V, V
GE
= 0
1.0 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 3 mA, V
CE
= 5 V
3.5
6.5 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 30 A, V
GE
= 15 V
2.0 2.45
V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
4650
pF
Turn-on delay time
t
d (on)
0.09
Rise time
t
r
0.07
Turn-on time
t
on
0.24
Turn-off delay time
t
d (off)
0.30
Fall time
t
f
0.05
Switching time
Turn-off time
t
off
0.43
s
Turn-on switching
loss
E
on
1.00
Switching loss
Turn-off switching
loss
E
off
Inductive Load
V
CC
= 300 V, I
C
= 30 A
V
GG
= +15 V, R
G
= 24
(Note 1)
(Note 2)
0.80
mJ
Peak forward voltage
V
F
I
F
= 30 A, V
GE
= 0
3.8 V
Reverse recovery time
t
rr
I
F
= 30 A, di/dt = -100 A/s
60 ns
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
R
G
I
C
V
CE
L
V
CC
-V
GE
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
d (on)
t
r
t
on
0
0
t
f
10%
10%
10%
90%
10%
90%
10%
90%
V
GE
V
CE
I
C
E
off
E
on
0
0
5%
GT30J324
2002-04-19
3
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
60
50
40
30
20
10
0
0 1 2 3 4
5
Common emitter
Tc = 25C
15
20
10
9
VGE = 8 V
0
4
8
12
16
20
Common emitter
Tc = -40C
30
IC = 10 A
60
0
4
8
12
16
20
0
4
8
12
16
20
Common emitter
Tc = 25C
0
4
8
12
16
20
30
IC = 10 A
60
20
0
4
8
12
16
20
Common emitter
Tc = 125C
0
4
8
12
16
30
IC = 10 A
60
60
50
40
30
20
10
0
0 4 8 12 16
20
Common emitter
V
CE
= 5 V
-40
Tc = 125C
25
0
1
2
3
4
Common emitter
VGE = 15 V
-60
-20
20
60
100
140
IC = 10 A
30
60
GT30J324
2002-04-19
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Collector current I
C
(A)
Switch
in
g
ti
m
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s
)
Switching time t
on
, t
r
, t
d (on)
R
G
Switch
in
g
ti
m
e
t
on
, t
r
, t
d (o
n)
(
s
)
Switching time t
on
, t
r
, t
d (on)
I
C
Switch
in
g
ti
m
e
t
on
, t
r
, t
d (o
n)
(
s
)
Switching time t
off
, t
f
, t
d (off)
R
G
Switch
in
g
ti
m
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s
)
Collector current I
C
(A)
Switching time t
off
, t
f
, t
d (off)
I
C
Switching loss E
on
, E
off
R
G
Collector current I
C
(A)
Switching loss E
on
, E
off
I
C
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Gate resistance R
G
()
Gate resistance R
G
()
Gate resistance R
G
()
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25C
: Tc = 125C
(Note 1)
1
10 30 100 300 1000
3
ton
td (on)
tr
3
1
0.3
0.1
0.01
0.03
10
3
1
0.1
0.3
10
0.01
1
10 30 100
300 1000
3
0.03
toff
tf
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25C
: Tc = 125C
(Note 1)
td (off)
0
5
10
15
20
25
30
0.01
1
0.3
0.03
10
0.1
3
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24
: Tc = 25C
: Tc = 125C
(Note 1)
toff
td (off)
tf
30
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25C
: Tc = 125C
(Note 2)
10
3
1
0.1
1
10 30 100 300 1000
3
0.3
Eoff
Eon
0
5
10
15
20
25
30
0.01
1
0.3
0.03
3
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24
: Tc = 25C
: Tc = 125C
(Note 2)
Eoff
Eon
1
0.3
0.01
0.03
3
0.1
0
5
10
15
20
25
30
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24
: Tc = 25C
: Tc = 125C
(Note 1)
td (on)
tr
ton
GT30J324
2002-04-19
5
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
R
e
v
e
rs
e
rec
o
v
e
ry
c
u
r
r
e
n
t I
rr
(A
)
Collector-emitter voltage V
CE
(V)
C V
CE
C
apaci
t
anc
e C
(p
F)
Gate
-e
mitt
er
voltag
e V
GE
(V
)
Gate charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Forward voltage V
F
(V)
I
F
V
F
Fo
rw
ar
d
c
u
r
r
en
t I
F
(A
)
R
e
v
e
rs
e
rec
o
v
e
ry
ti
me
t
rr
(ns
)
Forward current I
F
(A)
t
rr
, I
rr
I
F
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Collector-emitter voltage V
CE
(V)
Reverse Bias SOA
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
0
20
30
10
40
50
60
-40
Tc = 125C
25
Common collector
VGE = 0
0 0.6
1.2 1.8
2.4 3.0 3.6
0
40
80
120
160
200
0
100
200
300
400
500
0
4
8
12
16
20
VCE = 100 V
Common emitter
RL = 10
Tc = 25C
300
200
0 5 10 15 20 25
10
1
0.1
0.3
3
30
Common collector
di/dt = -100 A/s
VGE = 0
: Tc = 25C
: Tc = 125C
1000
100
300
30
trr
10
Irr
Tj 125C
VGE = 15 V
RG = 24
0.1
1
100
1
10
30
3
0.3
3
10
300
100 1000
30
0.1
Common emitter
VGE = 0
f = 1 MHz
Tc = 25C
10000
10
100
300
1000
30
3000
10
100 1000
30
0.3 1 3
Cies
Coes
Cres
300
*: Single pulse
Tc
= 25C
Curves must be
derated linearly
with increase in
temperature.
100 s*
50 s*
1 ms*
10 ms*
DC operation
IC max (continuous)
IC max (pulsed)*
1
10
30
3
0.3
3 10
30
300
100
0.1
1
100
1000
GT30J324
2002-04-19
6
Pulse width t
w
(s)
r
th
(t) t
w
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
r
th
(t
)
(
C
/
W
)
10
-5
10
-4
10
-2
10
-1
10
2
10
-4
10
-3
10
-2
10
-1
10
1
10
2
10
0
10
-3
10
0
10
1
Tc = 25C
IGBT
FRD
GT30J324
2002-04-19
7
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RESTRICTIONS ON PRODUCT USE
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