GT50J121
2002-03-18
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121
High Power Switching Applications
Fast Switching Applications
The 4
th
generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
f
= 0.05 s (typ.)
Low switching loss : E
on
= 1.30 mJ (typ.)
:
E
off
= 1.34 mJ (typ.)
Low saturation Voltage: V
CE (sat)
= 2.0 V (typ.)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600 V
Gate-emitter voltage
V
GES
20 V
DC I
C
50
Collector current
1 ms
I
CP
100
A
Collector power dissipation
(Tc
= 25C)
P
C
240
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance
R
th (j-c)
0.521 C/W
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F2C
Weight: 9.75 g
GT50J121
2002-03-18
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500 nA
Collector cut-off current
I
CES
V
CE
= 600 V, V
GE
= 0
1.0 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 5 mA, V
CE
= 5 V
3.5
6.5 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 50 A, V
GE
= 15 V
2.0 2.45 V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
7900
pF
Turn-on delay time
t
d (on)
0.09
Rise time
t
r
0.07
Turn-on time
t
on
0.24
Turn-off delay time
t
d (off)
0.30
Fall time
t
f
0.05
Switching time
Turn-off time
t
off
0.43
s
Turn-on switching
loss
E
on
1.30
Switching loss
Turn-off switching
loss
E
off
Inductive load
V
CC
= 300 V, I
C
= 50 A
V
GG
= +15 V, R
G
= 13
(Note 1)
(Note 2)
1.34
mJ
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
10%
90%
V
GE
V
CE
I
C
E
off
E
on
0
0
5%
GT50J325
R
G
I
C
V
CE
L
V
CC
-V
GE
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
d (on)
t
r
t
on
0
0
t
f
10%
10%
10%
90%
10%
90%
GT50J121
2002-03-18
3
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-em
i
tte
r s
a
tu
rati
on
vol
t
age
V
CE (sat)
(V
)
0
4
8
12
16
20
Common emitter
Tc
= -40C
30
50
IC = 10 A
100
0
4
8
12
16
20
0
4
8
12
16
20
Common emitter
Tc
= 25C
0
4
8
12
16
20
30
50
IC = 10 A
100
0
4
8
12
16
20
Common emitter
Tc
= 125C
0
4
8
12
16
20
30
50
IC = 10 A
100
0
4
8
12
16
20
-40
25
Tc
= 125C
0
20
40
60
80
100
Common emitter
VCE = 5 V
-60
-20
20
60
100
140
50
30
IC = 10 A
70
0
1
2
3
4
5
Common emitter
VGE = 15 V
100
0 1 2 3 4 5
10
8
VGE = 7 V
15
0
20
40
60
80
100
Common emitter
Tc
= 25C
20
GT50J121
2002-03-18
4
Collector current I
C
(A)
Switching time t
on
, t
r
, t
d (on)
I
C
Sw
itc
h
in
g
tim
e
t
on
, t
r
, t
d (o
n)
(
s)
Gate resistance R
G
(
)
Switching time t
off
, t
f
, t
d (off)
R
G
Sw
itc
h
in
g
tim
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s)
Gate resistance R
G
(
)
Switching loss E
on
, E
off
R
G
Sw
itc
h
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Gate resistance R
G
(
)
Switching time t
on
, t
r
, t
d (on)
R
G
Sw
itc
h
in
g
tim
e
t
on
, t
r
, t
d (o
n)
(
s)
Collector current I
C
(A)
Switching loss E
on
, E
off
I
C
Sw
itc
h
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Collector current I
C
(A)
Switching time t
off
, t
f
, t
d (off)
I
C
Sw
itc
h
in
g
tim
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s)
td (on)
tr
0 10 20 30 40 50
0.01
0.03
0.3
1
3
10
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
ton
0 10 20 30 40 50
0.01
0.03
0.3
1
3
10
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
td (off)
toff
tf
1 3 10 30
100
1000
0.1
0.3
1
3
10
30
300
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 2)
Eoff
Eon
1 3 10 30
100
1000
0.01
0.03
0.3
1
3
10
0.1
300
td (on)
ton
tr
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
1
0 10 20 30 40 50
0.1
3
10
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13
:
Tc
= 25C
:
Tc
= 125C
(Note 2)
0.3
Eoff
Eon
1 3 10 30
100
1000
0.01
0.03
0.3
1
3
10
0.1
300
toff
td (off)
tf
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
GT50J121
2002-03-18
5
Collector-emitter voltage V
CE
(V)
C V
CE
C
apa
ci
ta
nce
C
(
p
F)
Gate
-em
i
tt
er
volt
age
V
GE
(V
)
Gate charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
Safe operating area
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
0 100 200 300 400
Common emitter
RL = 6
Tc
= 25C
300
VCE = 100 V
200
0
100
200
300
400
500
0
4
8
16
20
12
0.1 1
3 30 300
1000
10
30
300
1000
3000
30000
100
10
0.3
100
10000
Common emitter
VGE = 0
f
= 1 MHz
Tc
= 25C
Cies
Coes
Cres
Pulse width t
w
(s)
r
th
(t) t
w
T
r
ansi
e
nt t
h
e
r
m
a
l
r
e
si
st
anc
e
r
th
(t
)
(
C
/
W
)
10
-5
10
-4
10
-2
10
-1
10
2
10
-4
10
-3
10
-2
10
-1
10
1
10
2
Tc
= 25C
10
0
10
-3
10
0
10
1
Tj <= 125C
VGE = 15 V
RG = 13
1 3 10 30 100
1000
0.1
0.3
3
10
100
300
30
1
300
1 3 10
30
300
1000
0.1
0.3
3
10
100
300
*: Single pulse
Tc
= 25C
Curves must be
derated linearly with
increase in
temperature.
100
30
1
100
s*
50
s*
1 ms*
10 ms*
DC operation
IC max (continuous)
IC max (pulse)*
PDF 
ZIP