GT50J325
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
The 4
th
generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
f
= 0.05 s (typ.)
Low switching loss : E
on
= 1.30 mJ (typ.)
: E
off
= 1.34 mJ (typ.)
Low saturation Voltage: V
CE (sat)
= 2.0 V (typ.)
FRD included between emitter and collector
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600 V
Gate-emitter voltage
V
GES
20 V
DC I
C
50
Collector current
1 ms
I
CP
100
A
DC I
F
50
Emitter-collector forward
current
1 ms
I
FM
100
A
Collector power dissipation
(Tc
= 25C)
P
C
240
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance (IGBT)
R
th (j-c)
0.521 C/W
Thermal resistance (diode)
R
th (j-c)
2.30 C/W
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F2C
Weight: 9.75 g
Gate
Emitter
Collector
GT50J325
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500
nA
Collector cut-off current
I
CES
V
CE
= 600 V, V
GE
= 0
1.0 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 5 mA, V
CE
= 5 V
3.5
6.5 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 50 A, V
GE
= 15 V
2.0 2.45
V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
7900
pF
Turn-on delay time
t
d (on)
0.09
Rise time
t
r
0.07
Turn-on time
t
on
0.24
Turn-off delay time
t
d (off)
0.30
Fall time
t
f
0.05
Switching time
Turn-off time
t
off
0.43
ms
Turn-on switching
loss
E
on
1.30
Switching loss
Turn-off switching
loss
E
off
Inductive load
V
CC
= 300 V, I
C
= 50 A
V
GG
= +15 V, R
G
= 13 W
(Note 1)
(Note 2)
1.34
mJ
Peak forward voltage
V
F
I
F
= 50 A, V
GE
= 0
4.2 V
Reverse recovery time
t
rr
I
F
= 50 A, di/dt = -100 A/ms
65 ns
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
10%
90%
V
GE
V
CE
I
C
E
off
E
on
0
0
5%
R
G
I
C
V
CE
L
V
CC
-V
GE
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
d (on)
t
r
t
on
0
0
t
f
10%
10%
10%
90%
10%
90%
GT50J325
3
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
0
4
8
12
16
20
Common emitter
Tc
= -40C
30
50
IC = 10 A
100
0
4
8
12
16
20
0
4
8
12
16
20
Common emitter
Tc
= 25C
0
4
8
12
16
20
30
50
IC = 10 A
100
0
4
8
12
16
20
Common emitter
Tc
= 125C
0
4
8
12
16
20
30
50
IC = 10 A
100
0
4
8
12
16
20
-40
25
Tc
= 125C
0
20
40
60
80
100
Common emitter
VCE = 5 V
-60
-20
20
60
100
140
50
30
IC = 10 A
70
0
1
2
3
4
5
Common emitter
VGE = 15 V
100
0 1 2 3 4 5
10
8
VGE = 7 V
15
0
20
40
60
80
100
Common emitter
Tc
= 25C
20
GT50J325
4
Collector current I
C
(A)
Switching time t
on
, t
r
, t
d (on)
I
C
Switch
in
g
ti
m
e
t
on
, t
r
, t
d (o
n)
(
m
s)
Gate resistance R
G
(
9)
Switching time t
off
, t
f
, t
d (off)
R
G
Switch
in
g
ti
m
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
m
s)
Gate resistance R
G
(
W
)
Switching loss E
on
, E
off
R
G
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Gate resistance R
G
(
9)
Switching time t
on
, t
r
, t
d (on)
R
G
Switch
in
g
ti
m
e
t
on
, t
r
, t
d (o
n)
(
m
s)
Collector current I
C
(A)
Switching loss E
on
, E
off
I
C
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Collector current I
C
(A)
Switching time t
off
, t
f
, t
d (off)
I
C
Switch
in
g
ti
m
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
m
s)
td (on)
tr
0
10
20
30 40 50
0.01
0.03
0.3
1
3
10
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13 W
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
ton
0
10
20
30 40 50
0.01
0.03
0.3
1
3
10
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13 W
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
td (off)
toff
tf
1 3 10 30
100
1000
0.1
0.3
1
3
10
30
300
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 2)
Eoff
Eon
1 3 10 30
100
1000
0.01
0.03
0.3
1
3
10
0.1
300
td (on)
ton
tr
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
1 3 10 30
100
Common emitter
VCC = 300 V
VGG = 15 V
IC = 50 A
:
Tc
= 25C
:
Tc
= 125C
(Note 1)
1000
0.01
0.03
0.3
1
3
10
0.1
300
tf
td (off)
toff
1
0
10
20
30 40 50
0.1
3
10
Common emitter
VCC = 300 V
VGG = 15 V
RG = 13 W
:
Tc
= 25C
:
Tc
= 125C
(Note 2)
0.3
Eoff
Eon
GT50J325
5
Collector-emitter voltage V
CE
(V)
C V
CE
C
apaci
t
anc
e C
(p
F)
Gate
-e
mitt
er
voltag
e V
GE
(V
)
Gate charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
R
e
v
e
rs
e
rec
o
v
e
ry
ti
me
t
rr
(ns
)
Forward current I
F
(A)
t
rr
, I
rr
I
F
R
e
v
e
rs
e
rec
o
v
e
ry
c
u
r
r
e
n
t I
rr
(A
)
Forward voltage V
F
(V)
I
F
V
F
Fo
rw
ar
d
c
u
r
r
en
t I
F
(A
)
Collector-emitter voltage V
CE
(V)
Safe operating area
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Col
l
e
c
t
or c
u
rrent
I
C
(A
)
0
100
200 300 400
Common emitter
RL = 6 W
Tc
= 25C
300
VCE = 100 V
200
0
100
200
300
400
500
0
4
8
16
20
12
0 1 2 3 4 5
Common collector
VGE = 0
0
20
40
60
80
100
-40
Tc
= 125C
25
0.1 1
3 30 300
1000
10
30
300
1000
3000
30000
100
10
0.3
100
10000
Common emitter
VGE = 0
f
= 1 MHz
Tc
= 25C
Cies
Coes
Cres
0
10
20
30 40 50
0.1
0.3
3
10
30
100
Common collector
di/dt
= -100 A/ms
VGE = 0
:
Tc
= 25C
:
Tc
= 125C
1
10
30
100
300
1000
3000
Irr
trr
10000
Tj <= 125C
VGE = 15 V
RG = 13 W
1
3
10
30
100 1000
0.1
0.3
3
10
100
300
30
1
300
1 3 10
30
300
1000
0.1
0.3
3
10
100
300
*: Single pulse
Tc
= 25C
Curves must be
derated linearly with
increase in
temperature.
100
30
1
100
ms*
50
ms*
1 ms*
10 ms*
DC operation
IC max (continuous)
IC max (pulse)*
GT50J325
6
Pulse width t
w
(s)
r
th
(t) t
w
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
r
th
(t)
(
C
/
W
)
10-
5
10-
4
10-
2
10-
1
10
2
IGBT
FRD
10-
4
10-
3
10-
2
10-
1
10
1
10
2
Tc
= 25C
10
0
10-
3
10
0
10
1
GT50J325
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP