GT60N321
2002-01-18
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
FRD included between emitter and collector
Enhancement-mode
High speed IGBT : t
f
= 0.25 s (typ.) (I
C
= 60 A)
FRD
:
t
rr
= 0.8 s (typ.) (di/dt = -20 A/s)
Low saturation voltage: V
CE (sat)
= 2.3 V (typ.) (I
C
= 60 A)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics symbol
Rating
Unit
Collector-Emitter Voltage
V
CES
1000 V
Gate-Emitter Voltage
V
GES
25 V
DC I
C
60
Collector Current
1 ms
I
CP
120
A
DC I
ECF
15
Emitter-Collector
Forward Current
1 ms
I
ECFP
120
A
Collector Power Dissipation
(Tc
= 25C)
P
C
170
W
Junction Temperature
T
j
150 C
Storage Temperature
T
stg
-55~150 C
Screw Torque
0.8 Nm
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
Emitter
Collector
Gate
GT60N321
2002-01-18
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristic Symbol Test
Condition Min
Typ.
Max
Unit
Gate Leakage Current
I
GES
V
GE
= 25 V, V
CE
= 0
500
nA
Collector Cut-off Current
I
CES
V
CE
= 1000 V, V
GE
= 0
1.0 mA
Gate-Emitter Cut-off Voltage
V
GE (OFF)
I
C
= 60 mA, V
CE
= 5 V
3.0
6.0 V
Collector-Emitter Saturation Voltage
V
CE (sat)
(1) I
C
= 10 A, V
GE
= 15 V
1.6 2.3 V
Collector-Emitter Saturation Voltage
V
CE (sat)
(2) I
C
= 60 A, V
GE
= 15 V
2.3 2.8 V
Input Capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
4000
pF
Rise Time
t
r
0.23
Turn-on Time
t
on
0.33
Fall Time
t
f
0.25 0.40
Switching Time
Turn-off Time
t
off
0.70
ms
Emitter-Collector Forward Voltage
V
ECF
I
EC
= 15 A, V
GE
= 0
1.5 2.0 V
Reverse Recovery Time
t
rr
I
F
= 15 A, V
GE
= 0, di/dt = -20 A/ms
0.8 2.5 ms
Thermal Resistance
R
th(j-c)
0.74
C/W
Thermal Resistance
R
th(j-c)
4.0
C/W
-15 V
15 V
0
51
W
600 V
10
9
GT60N321
2002-01-18
3
0 2 4
6
8
0
20
40
60
80
100
25
TC = 125C
Common
Emitter
VCE = 5 V
40
0
5
10
15
20
25
0
2
4
6
8
10
80
60
30
IC = 10 A
Common
emitter
Tc
= -40C
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage VCE (V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage VGE (V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage VGE (V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage VGE (V)
V
CE
V
GE
Gate-emitter voltage VGE (V)
I
C
V
GE
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (
s
a
t
)
(V
)
0 5 10
15
20
25
0
2
4
6
8
10
80
60
30
IC = 10 A
Common
emitter
Tc
= 25C
0
5
10
15
20
25
0
2
4
6
8
10
80
60
30
IC = 10 A
Common
emitter
Tc
= 125C
-40
0
40
80
120
0
1
2
3
4
80
IC = 10 A
Common
emitter
VGE = 15 V
160
60
30
100
80
60
40
20
0
0 1 2 3 4
5
VGE = 7 V
15 V
20 V
25 V
10 V
Common
emitter
Tc
= 25C
GT60N321
2002-01-18
4
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
C
apaci
t
anc
e C
(p
F)
Gate charge QG (nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
) (
10 V
)
Gate
-e
mitt
er
voltag
e V
GE
(V
)
Gate resistance RG (
W
)
Switching time R
G
Switch
in
g
ti
m
e
(
m
s)
Collector current IC (A)
Switching Time I
C
Switch
in
g
ti
m
e
(
m
s)
Collector-emitter voltage VCE (V)
C
V
CE
Collector- emitter voltage VCE (V)
Safe Operating Area
Collector-emitter voltage VCE (V)
Reverse Bias SOA
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
0
0
4
8
VCE = 150 V
Common
emitter
RL = 2.5 W
TC = 25C
100 V
50 V
12
16
20
50 100 150 200
250 300 350 400
0.1
1
1
10
10
100 1000
Common emitter
VCC = 600 V
IC = 60 A
VGG =
15
V
TC = 25C
toff
ton
tr
tf
0.1
0
1
10
20 60
80
Common emitter
VCC = 600 V
RG = 51
W
VGG =
15
V
TC = 25C
40
toff
ton
tr
tf
10
1
100
1000
10000
10
100 1000 10000
Coes
Cres
Cies
Common emitter
VGE = 0 V
f
= 1 MHz
TC = 25C
1
1
30
100
1000 3000
300
3
5
10
30
50
100
300
Tj <= 125C
VGE = 15 V
RG = 10 W
1
1
IC max (Pulsed)*
IC max
(Continuous)
10
ms*
1 ms*
10 ms*
DC
Operation
100
ms*
* Single
non-repetitive
pulse Tc
= 25C
curves must be
derated linearly
with increase in
temperature.
10
100
1000
10 100
1000
3000
GT60N321
2002-01-18
5
Pulse width tw (s)
R
th (t)
t
w
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
R
th (
t
)
(C
/
W
)
Collector-emitter forward voltage VECF (V)
R
e
v
e
rs
e
rec
o
v
e
ry
ti
me
t
rr
(
m
s)
Emitter-collector forward current IECF (A)
I
rr
, t
rr
I
ECF
P
eak
rev
e
rs
e r
e
co
ver
y
cu
rr
ent
I rr
(A
)
R
e
v
e
rs
e
rec
o
v
e
ry
ti
me
t
rr
(
m
s)
di/dt (A/
ms)
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0
2.5
Tc
= 125C
25
-40
10
9
8
7
6
5
0 20 40 60 80
100
Common emitter
di/dt
= -20 A/ms
Tc
= 25C
0
0.4
0.8
1.2
1.6
2
Irr
trr
I
rr
, t
rr
di/dt
I
ECF
V
ECF
E
m
itte
r-c
ollect
or
fo
rwa
r
d c
u
r
r
e
n
t
I ECF
(A
)
Common
collector
10-
3
10-
5
10-
2
10-
1
10
0
10
1
10
2
10
3
10-
4
10-
3
10-
2
10-
1
10
0
10
1
10
2
IGBT Stage
Diode Stage
Tc
= 25C
P
eak
rev
e
rs
e r
e
co
ver
y
cu
rr
ent
I rr
(A
)
50
40
30
20
10
0
0 50 100
150
200
250
Common emitter
IECF = 60 A
Tc
= 25C
0
0.2
0.4
0.6
0.8
1
trr
GT60N321
2002-01-18
6
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000707EAA
RESTRICTIONS ON PRODUCT USE
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