MG200J6ES60
2002-01-24
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG200J6ES60
(600V/200A 6in1)
High Power Switching Applications
Motor Control Applications
Integrates inverter power circuit in to a single package.
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
= 1.6 V (typ.)
Equivalent Circuit
Signal Terminal
CN-1
1. E (W)
2. G (W)
3. E (V)
4.
G (V)
5. E
(U)
6. G
(U)
7. TH1
8.
TH2
CN-2
1. G (Z)
2. G (Y)
3. G (X)
4.
E (L)
P
CN-1:7
CN-1:8
N
CN-2:4
CN-2:3
CN-1:5
CN-1:6
CN-2:2
CN-1:3
CN-1:4
CN-2:1
CN-1:1
CN-1:2
U
V
W
MG200J6ES60
2002-01-24
3
Maximum Ratings
(Ta
=
=
=
=
25C)
Stage Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600
V
Gate-emitter voltage
V
GES
20 V
DC I
C
200
Collector current
1 ms
I
CP
400
A
DC I
F
200
Forward current
1 ms
I
FM
400
A
Inverter
Collector power dissipation (Tc
=
25C)
P
C
1000
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-
40~125 C
Isolation voltage
V
isol
2500
(AC
1
min)
V
Module
Screw torque
3 (M5)
N
m
Electrical Characteristics
(T
j
=
=
=
=
25C)
1. Inverter
stage
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
=
20 V, V
CE
=
0
500
nA
Collector cut-off current
I
CES
V
CE
=
600 V, V
GE
=
0
1.0 mA
Gate-emitter cut-off voltage
V
GE (off)
V
CE
=
5 V, I
C
=
200
mA
5.0 6.5 8.0 V
T
j
=
25C
1.6 2.2
Collector-emitter saturation voltage
V
CE (sat)
V
GE
=
15 V,
I
C
=
200 A
T
j
=
125C
2.2
V
Input capacitance
C
ies
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
33000
pF
Turn-on delay time
t
d (on)
1.00
Turn-off time
t
off
1.20
Switching time
Fall time
t
f
0.50
Reverse recovery time
t
rr
V
CC
=
300 V, I
C
=
200 A
V
GE
=
15 V, R
G
=
10
W
(Note
1)
0.30
m
s
Forward voltage
V
F
I
F
=
200 A
1.7 2.3 V
Note 1: Switching time test circuit & timing chart
2. Module
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Zero-power resistance
R25
ITM
=
0.2 mA
100
k
W
B value
B25/85
Tc
=
25C/Tc
=
85C
4390
K
Inverter IGBT stage
0.125
Junction to case thermal resistance
R
th (j-c)
Inverter FRD stage
0.195
C/W
Case to fin thermal resistance
R
th (c-f)
0.05
C/W
MG200J6ES60
2002-01-24
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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