RN1114~RN1118
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2114~2118
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
RN1114~1118
V
CEO
50 V
RN1114 5
RN1115 6
RN1116 7
RN1117 15
Emitter-base voltage
RN1118
V
EBO
25
V
Collector current
I
c
100
mA
Collector power dissipation
P
c
100 mW
Junction temperature
T
j
150
C
Storage temperature range
RN1114~1118
T
stg
-55~150
C
JEDEC
EIAJ
TOSHIBA 2-2H1A
Weight: 2.4mg
Type No.
R
1
(k)
R
2
(k)
RN1114 1
10
RN1115 2.2
10
RN1116 4.7
10
RN1117 10 4.7
RN1118 47
10
Unit: mm
RN1114~RN1118
2001-06-07
2
Electrical Characteristics
(Ta = 25
C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1114~1118 I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Collector cut-off current
RN1114~1118
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1114
V
EB
= 5V, I
C
= 0
0.35
0.65
RN1115
V
EB
= 6V, I
C
= 0
0.37
0.71
RN1116
V
EB
= 7V, I
C
= 0
0.36
0.68
RN1117
V
EB
= 15V, I
C
= 0
0.78
1.46
Emitter cut-off current
RN1118
I
EBO
V
EB
= 25V, I
C
= 0
0.33
0.63
mA
RN1114~16, 18
50
DC current gain
RN1117
h
FE
V
CE
= 5V, I
C
= 10mA
30
Collector-emitter
saturation voltage
RN1114~1118 V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
RN1114
0.6
2.0
RN1115
0.7
2.5
RN1116
0.8
2.5
RN1117
1.5
3.5
Input voltage (ON)
RN1118
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.5
10.0
V
RN1114
0.3
0.9
RN1115
0.3
1.0
RN1116
0.3
1.1
RN1117
0.3
2.3
Input voltage (OFF)
RN1118
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
5.7
V
Translation Frequency
RN1114~1118
f
T
V
CE
= 10V, I
C
= 5mA
250 MHz
Collector output
capacitance
RN1114~1118 C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3.0 6.0 pF
RN1114
0.7 1.0 1.3
RN1115
1.54
2.2
2.86
RN1116
3.29
4.7
6.11
RN1117
7.0
10.0
13.0
Input Resistor
RN1118
R
1
32.9 47.0 61.1
k
RN1114
0.1
RN1115
0.22
RN1116
0.47
RN1117
2.13
Resistor Ratio
RN1118
R
1
/R
2
4.7
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