RN1307~RN1309
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1307,RN1308,RN1309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2307~RN2309
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
V
CEO
50 V
RN1307 6
RN1308 7
Emitter-base voltage
RN1309
V
EBO
15
V
Collector current
I
c
100
mA
Collector power dissipation
P
c
100 mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
JEDEC
EIAJ SC-70
TOSHIBA 2-2E1A
Weight: 0.006g
Unit: mm
Type No.
R1 (k)
R2 (k)
RN2207 10
47
RN2208 22
47
RN2209 47
22
RN1307~RN1309
2001-06-07
2
Electrical Characteristics
(Ta = 25
C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
Collector cut-off current
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1307
V
EB
= 6V, I
C
= 0
0.081
0.15
RN1308
V
EB
= 7V, I
C
= 0
0.078
0.145
Emitter cut-off current
RN1309
I
EBO
V
EB
= 15V, I
C
= 0
0.167
0.311
mA
RN1307
80
RN1308
80
DC current gain
RN1309
h
FE
V
CE
= 5V, I
C
= 10mA
70
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
RN1307
0.7
1.8
RN1308
1.0
2.6
Input voltage (ON)
RN1309
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.2
5.8
V
RN1307
0.5
1.0
RN1308
0.6
1.16
Input voltage (OFF)
RN1309
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
1.5
2.6
V
Translation frequency
f
T
V
CE
= 10V, I
C
= 5mA
250 MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3 6 pF
RN1307
7
10
13
RN1308
15.4
22
28.6
Input resistor
RN1309
R1
32.9 47 61.1
k
RN1307
0.191
0.213
0.232
RN1308
0.421
0.468
0.515
Resistor ratio
RN1309
R1/R2
1.92 2.14 2.35
RN1307~RN1309
2001-06-07
6
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