RN1407,RN1408,RN1409
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1407,RN1408,RN1409
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2407~RN2409
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
RN1407~RN1409
V
CBO
50 V
Collector-emitter voltage
RN1407~RN1409
V
CEO
50 V
RN1407 6
RN1408 7
Emitter-base voltage
RN1409
V
EBO
15
V
Collector current
RN1407~RN1409
I
C
100
mA
Collector power dissipation
RN1407~RN1409
P
C
200
mW
Junction temperature
RN1407~RN1409
T
j
150
C
Storage temperature range
RN1407~RN1409
T
stg
-55~150
C
JEDEC TO-236MOD
EIAJ SC-59
TOSHIBA 2-3F1A
Weight: 0.012g
Type No.
R1 (k) R2
(k)
RN1407 10 47
RN1408 22 47
RN1409 47 22
Unit: mm
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