RN1710JE,RN1711JE
2004-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1710JE,RN1711JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN2710JE~RN2711JE
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25C)
(Q1, Q2 common)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
100
mA
Collector power dissipation
P
C
(Note)
100 mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150 C
Note: Total rating
Unit: mm
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.003 g (typ.)
Equivalent Circuit
(top view)
5 4
1 2 3
Q2
Q1
R1
B
C
E
RN1710JE,RN1711JE
2004-03-01
2
Electrical Characteristics (Ta
=
25C) (Q1, Q2 common)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 50 V, I
E
= 0
100 nA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
100 nA
DC current gain
h
FE
V
CE
= 5 V, I
C
= 1 mA
120
700
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5 mA, I
B
= 0.25 mA
0.1 0.3 V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 5 mA
250 MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3 6 pF
RN1710JE
3.29 4.7 6.11
Input resistor
RN1711JE
R1
7 10 13
k
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