RN2107
~RN2109
2001-06-07
1
Type No.
R1 (k) R2
(k)
RN2107 10 47
RN2108 22 47
RN2109 47 22
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107,RN2108,RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1107~RN1109
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25
C) (Q1, Q2 Common)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
RN2107~RN2109
V
CEO
-50 V
RN2107
-6
RN2108
-7
Emitter-base voltage
RN2109
V
EBO
-15
V
Collector current
I
C
-100 mA
Collector power dissipation
P
C*
100
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2107~RN2109
T
stg
-55~150
C
*: Total rating
JEDEC
EIAJ
TOSHIBA 2-2H1A
Weight: 2.4mg
Unit: mm
RN2107
~RN2109
2001-06-07
2
Electrical Characteristics
(Ta = 25
C) (Q1, Q2 Common)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= -50V, I
E
= 0
-100
nA
Collector cut-off
current
RN2107
~RN2109
I
CEO
V
CE
= -50V, I
B
= 0
-500
nA
RN2107 V
EB
= -6V, I
C
= 0
-0.081
-0.15
RN2108 V
EB
= -7V, I
C
= 0
-0.078
-0.145
Emitter cut-off current
RN2109
I
EBO
V
EB
= -15V, I
C
= 0
-0.167
-0.311
mA
RN2107 80
RN2108 80
DC current gain
RN2109
h
FE
V
CE
= -5V, I
C
= -10mA
70
Collector-emitter
saturation voltage
RN2107
~RN2109
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3
V
RN2107
-0.7
-1.8
RN2108
-1.0
-2.6
Input voltage (ON)
RN2109
V
I (ON)
V
CE
= -0.2V, I
C
= -5mA
-2.2
-5.8
V
RN2107
-0.5
-1.0
RN2108
-0.6
-1.16
Input voltage (OFF)
RN2109
V
I (OFF)
V
CE
= -5V, I
C
= -0.1mA
-1.5
-2.6
V
Transition frequency
RN2107
~RN2109
f
T
V
CE
= -10V, I
C
= -5mA
200
MHz
Collector Output
capacitance
RN2107
~RN2109
C
ob
V
CB
= -10V, I
E
= 0,
f = 1MH
z
3 6
pF
RN2107
7 10 13
RN2108
15.4 22 28.6
Input resistor
RN2109
R1
32.9 47 61.1
k
RN2107
0.191 0.213 0.232
RN2108
0.421 0.468 0.515
Resistor ratio
RN2109
R1/R2
1.92 2.14 2.35
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