RN2210,RN2211
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1210, 1211
Equivalent Circuit
Maximum Ratings
(Ta = 25
C)
Characterisstic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-5 V
Collector current
I
C
-100 mA
Collector power dissipation
P
C
300 mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
JEDEC
EIAJ
TOSHIBA 2-4E1A
Weight: 0.13g
Unit: mm
RN2210,RN2211
2001-06-07
2
Electrical Characteristics
(Ta = 25
C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= -50V, I
E
= 0
-100
nA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
= 0
-100
nA
DC current gain
h
FE
V
CE
= -5V, I
C
= -1mA 120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3
V
Translation frequency
f
T
V
CE
= -10V, I
C
= -5mA
200
MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f = 1MHz
3 6 pF
RN2210 3.29
4.7
6.11
Input resistor
RN2211
R1
7
10 13
k
RN2210,RN2211
2001-06-07
5
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000707EAA
RESTRICTIONS ON PRODUCT USE
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