RN2221~RN2227
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223
RN2224,RN2225,RN2226,RN2227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l High current type (I
C(MAX)
= -800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low V
CE (sat)
l Complementary to RN1221~RN1227
Equivalent Circuit
Bias Resistor Values
Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
RN2221~2227
V
CEO
-50 V
RN2221~2224
-10
RN2225, 2226
-5
Emitter-base voltage
RN2227
V
EBO
-6
V
Collector current
I
C
-800 mA
Collector power dissipation
P
C
300 mW
Junction temperature
T
j
150
C
Storage temperature range
RN2221~2227
T
stg
-55~150
C
JEDEC
EIAJ
TOSHIBA 2-4E1A
Weight: 0.13g
Unit: mm
Type No.
R1 (k)
R2 (k)
RN2221 1
1
RN2222 2.2 2.2
RN2223 4.7 4.7
RN2224 10
10
RN2225 0.47
10
RN2226 1
10
RN2227 2.2
10
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