RN2307~RN2309
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2307,RN2308,RN2309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1307~RN1309
Equivalent Circuit
Bias Resistor Values
Maximum Ratings
(Ta
=
25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
RN2307
-6
RN2308
-7
Emitter-base voltage
RN2309
V
EBO
-15
V
Collector current
I
C
-100 mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
JEDEC
EIAJ SC-70
TOSHIBA 2-2E1A
Weight: 0.006g
Type No.
R1 (k)
R2 (k)
RN2307 10
47
RN2308 22
47
RN2309 47
22
Unit: mm
RN2307~RN2309
2001-06-07
2
Electrical Characteristics
(Ta = 25
C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= -50V, I
E
= 0
-100
Collector cut-off current
I
CEO
V
CE
= -50V, I
B
= 0
-500
nA
RN2307
V
EB
= -6V, I
C
= 0
-0.081
-0.15
RN2308
V
EB
= -7V, I
C
= 0
-0.078
-0.145
Emitter cut-off current
RN2309
I
EBO
V
EB
= -15V, I
C
= 0
-0.167
-0.311
mA
RN2307
80
RN2308
80
DC current gain
RN2309
h
FE
V
CE
= -5V, I
C
= -10mA
70
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3
V
RN2307
-0.7
-1.8
RN2308
-1.0
-2.6
Input voltage (ON)
RN2309
V
I (ON)
V
CE
= -0.2V, I
C
= -5mA
-2.2
-5.8
V
RN2307
-0.5
-1.0
RN2308
-0.6
-1.16
Input voltage (OFF)
RN2309
V
I (OFF)
V
CE
= -5V, I
C
= -0.1mA
-1.5
-2.6
V
Translation frequency
f
T
V
CE
= -10V, I
C
= -5mA
200 MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0,
f = 1MHz
3 6 pF
RN2307
7
10
13
RN2308
15.4
22
28.6
Input resistor
RN2309
R1
32.9 47 61.1
k
RN2307
0.191
0.213
0.232
RN2308
0.421
0.468
0.515
Resistor ratio
RN2309
R1/R2
1.92 2.14 2.35
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