RN2961FE~RN2966FE
2004-07-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2961FE,RN2962FE,RN2963FE
RN2964FE,RN2965FE,RN2966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1961FE~RN1966FE
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25C)
(Q1, Q2 common)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
RN2961FE~2966FE
V
CEO
-50 V
RN2961FE~2964FE
-10
Emitter-base voltage
RN2965FE, 2966FE
V
EBO
-5
V
Collector current
I
C
-100 mA
Collector power dissipation
P
C
(Note)
100 mW
Junction temperature
T
j
150
C
Storage temperature range
RN2961FE~2966FE
T
stg
-55~150 C
Note: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2N1A
Weight: 0.003 g (typ.)
6
5 4
1 2 3
Q1
Q2
Type No.
R1 (k
) R2
(k
)
RN2961FE 4.7
4.7
RN2962FE 10
10
RN2963FE 22
22
RN2964FE 47
47
RN2965FE 2.2
47
RN2966FE 4.7
47
R1
R2
B
C
E
Equivalent Circuit
(top view)
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