RN4911
2001-06-07
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1:
10k
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-5
V
Collector current
I
C
-100 mA
Q2 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
JEDEC
EIAJ
TOSHIBA
2-2J1A
Weight: 6.8mg
Unit: mm
RN4911
2001-06-07
2
Q1, Q2 Common Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector power dissipation
P
C
* 200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
* Total rating
Marking
Equivalent Circuit
(Top View)
RN4911
2001-06-07
3
Q1 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= -50V, I
E
= 0
-100
nA
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
= 0
-100
mA
DC current gain
h
FE
V
CE
= -5V, I
C
= -1mA 120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -5mA
200 MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f = 1MHz
3 6 pF
Q2 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
= 0
100
mA
DC current gain
h
FE
V
CE
= 5V, I
C
= 1mA
120
700
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
Transition frequency
f
T
V
CE
= 10V, I
C
= 5mA
250 MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1 MHz
3 6 pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
7
10
13
k
PDF 
ZIP
