RN4981
2001-06-07
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4981
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Includeing two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1:
4.7k
R2:
4.7k
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q2 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-10
V
Collector current
I
C
-100 mA
JEDEC
EIAJ
TOSHIBA 2-2J1A
Weight: 6.8mg
Unit: mm
RN4981
2001-06-07
2
Q1, Q2 Common Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector power dissipation
P
C
* 200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
* Total rating
Marking
Equivalent Circuit
(Top View)
RN4981
2001-06-07
3
Q1 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
Collector cut-off current
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
Emitter cut-off current
I
EBO
V
EB
= 10V, I
C
= 0
0.82
1.52 mA
DC current gain
h
FE
V
CE
= 5V, I
C
= 10mA
30
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
Input voltage (ON)
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
1.1
2.0 V
Input voltage (OFF)
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
1.0
1.5 V
Transition frequency
f
T
V
CE
= 10V, I
C
= 5mA
250 MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1 MHz
3 6 pF
Q2 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= -50V, I
E
= 0
-100
Collector cut-off current
I
CEO
V
CE
= -50V, I
B
= 0
-500
nA
Emitter cut-off current
I
EBO
V
EB
= -10V, I
C
= 0
-0.82
-1.52 mA
DC current gain
h
FE
V
CE
= -5V, I
C
= -10mA 30
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3 V
Input voltage (ON)
V
I (ON)
V
CE
= -0.2V, I
C
= -5mA
-1.1
-2.0 V
Input voltage (OFF)
V
I (OFF)
V
CE
= -5V, I
C
= -0.1mA
-1.0
-1.5 V
Transition frequency
f
T
V
CE
= -10V, I
C
= -5mA
200 MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f = 1MHz
3 6 pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
3.29
4.7
6.11
k
Resistor ratio
R1/R2
0.9
1.0
1.1
PDF 
ZIP
