RN4982
2001-06-07
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4982
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1:
10k
R2:
10k
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
10
V
Collector current
I
C
100
mA
Q2 Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
-50 V
Collector-emitter voltage
V
CEO
-50 V
Emitter-base voltage
V
EBO
-10
V
Collector current
I
C
-100 mA
JEDEC
EIAJ
TOSHIBA
2-2J1A
Weight: 6.8mg
Unit: mm
RN4982
2001-06-07
2
Q1, Q2 Common Maximum Ratings
(Ta = 25
C)
Characteristic Symbol
Rating
Unit
Collector power dissipation
P
C
* 200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
* Total rating
Marking
Equivalent Circuit
(Top View)
RN4982
2001-06-07
3
Q1 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
Collector cut-off current
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
Emitter cut-off current
I
EBO
V
EB
= 10V, I
C
= 0
0.38
0.71
mA
DC current gain
h
FE
V
CE
= 5V, I
C
= 10mA
50
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
Input voltage (ON)
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
1.2
2.4 V
Input voltage (OFF)
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
1.0
1.5 V
Transition frequency
f
T
V
CE
= 10V, I
C
= 5mA
250 MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1 MHz
3 6 pF
Q2 Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= -50V, I
E
= 0
-100
Collector cut-off current
I
CEO
V
CE
= -50V, I
B
= 0
-500
nA
Emitter cut-off current
I
EBO
V
EB
= -10V, I
C
= 0
-0.38
-0.71
mA
DC current gain
h
FE
V
CE
= -5V, I
C
= -10mA 50
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -5mA, I
B
= -0.25mA
-0.1
-0.3
V
Input voltage (ON)
V
I (ON)
V
CE
= -0.2V, I
C
= -5mA
-1.2
-2.4
V
Input voltage (OFF)
V
I (OFF)
V
CE
= -5V, I
C
= -0.1mA
-1.0
-1.5
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -5mA
200 MHz
Collector output capacitance
C
ob
V
CB
= -10V, I
E
= 0, f = 1MHz
3 6 pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
7
10
13
k
Resistor ratio
R1/R2
0.9
1.0
1.1
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