RSF05G1-1P,RSF05G1-3P,RSF05G1-5P
2001-07-10
1
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1-1P,RSF05G1-3P,RSF05G1-5P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage
: V
RRM
= 400V
l Average On-State Current
: I
T (AV)
= 500mA
l Plastic Mold Type
l Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in R
GK
:
R
GK
= 1k, 2.7k, 5.1k
(Typical)
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
RSF05G1-1P 400
RSF05G1-3P 400
Repetitive Peak
Off-State Voltage and
Repetitive Peak
Reverse Voltage
RSF05G1-5P
V
DRM
V
RRM
400
V
RSF05G1-1P 500
RSF05G1-3P 500
Non-Repetitive Peak
Reverse Voltage
(Non-Repetitive<
5ms, Tj = 0~125C)
RSF05G1-5P
V
DSM
500
V
Average On-State Current
(Half Sine Waveform)
I
T(AV)
500 mA
R.M.S. On-State Current
I
T(RMS)
800 mA
9 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t 0.4
A
2
s
Critical Rate of Rise of On-State
Current
di / dt
10
A / s
Peak Gate Power Dissipation
P
GM
0.1 W
Average Gate Power Dissipation
P
G(AV)
0.01 W
Peak Forward Gate Voltage
V
FGM
3.5 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
-40~125 C
Storage Temperature
T
stg
-40~125 C
Note:
di / dt Test Condition, i
G
= 5mA, t
gw
= 10s, t
gr
250ns
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 13-5A1A
Weight: 0.2g
EQUIVALENT CIRCUIT
RSF05G1-1P,RSF05G1-3P,RSF05G1-5P
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
10 A
Peak On-State Voltage
V
TM
I
TM
= 1A
1.5 V
Gate Trigger Voltage
V
GT
0.4
0.8 V
RSF05G1-1P 400
700
1000
RSF05G1-3P
150 250 400
Gate Trigger
Current
RSF05G1-5P
I
GT
V
D
= 6V, R
L
= 100
80 160 250
A
RSF05G1-1P
6
RSF05G1-3P
3
Holding Current
RSF05G1-5P
I
H
I
TM
= 1A, V
D
= 6V
2
mA
RSF05G1-1P 700
1000
1300
RSF05G1-3P
1890 2700 3510
Resistor Between
Gate and Cathode
RSF05G1-5P
R
GK
3570 5100 6630
RSF05G1-1P
200
RSF05G1-3P
70
Critical Rate of
Rise of Off-State
Voltage
RSF05G1-5P
dv / dt
V
DRM
= Rated
Exponential Rise
40
V / s
Gate Turn-On Time
t
gt
V
D
= Rated, i
G
= 5mA
1.5 s
Junction to Lead
R
th(j -)
40
Thermal
Resistance Junction to Ambient
R
th(j-a)
DC
180
C / W
MARKING
Example : It is mark of RSF05G1-1P
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