SF0R5G43,SF0R5J43
2001-07-10
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400,600V
l Average On-State Current
: I
T (AV)
= 500mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SF0R5G43 400
Repetitive Peak
Off-State Voltage and
Repetitive Peak
Reverse Voltage
(R
GK
= 1k)
SF0R5J43
V
DRM
V
RRM
600
V
SF0R5G43 500
Non-Repetitive Peak
Reverse Voltage
(Non-Repetitive < 5ms,
R
GK
= 1k,
T
j
= 0~110C)
SF0R5J43
V
RSM
720
V
Average On-State Current
(Half Sine Waveform Tc = 30C)
I
T (AV)
500 mA
R.M.S On-State Current
I
T (RMS)
800 mA
7 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
8 (60Hz)
A
I
2
t Limit Value
I
2
t 0.25
A
2
s
Peak Gate Power Dissipation
P
GM
1 W
Average Gate Power Dissipation
P
G (AV)
0.01 W
Peak Forward Gate Voltage
V
FGM
8 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
500
mA
Junction Temperature
T
j
-65~125 C
Storage Temperature Range
T
stg
-65~125 C
Note:
Should be used with gate resistance as follows.
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 13-5A1D
Weight: 0.2g
PDF 
ZIP
