SF16GZ51,SF16JZ51
2001-07-13
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage : V
RRM
= 400,600V
l Average On-State Current
: I
T (AV)
= 16A
l Isolation Voltage
: V
Isol
= 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SF16GZ51 400
Repetitive Peak
Off-State Voltage and
Repetitive Peak
Reverse Voltage
SF16JZ51
V
DRM
V
RRM
600
V
SF16GZ51 500
Non-Repetitive Peak
Reverse Voltage
(Non-Repetitive <5ms,
T
j
= 0~125C)
SF16JZ51
V
RSM
720
V
Average On-State Current
(Half Sine Waveform)
I
T(AV)
16 A
R.M.S On-State Current
I
T(RMS)
25 A
250 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
275 (60Hz)
A
I
2
t Limit Value
I
2
t 312
A
2
s
Critical Rate of Rise of On-State
Curret (Note)
di / dt
100
A / s
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
FGM
10 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Isolation Voltage (AC, t = 1min.)
V
Isol
1500 V
Note : di / dt Test Condition, i
G
= 30mA, t
gw
= 10s, t
gr
250ns
JEDEC
JEITA
TOSHIBA 13-16A1B
Weight: 5.9g
Unit: mm
SF16GZ51,SF16JZ51
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
20 A
Peak On-State Voltage
V
TM
I
TM
= 50A
1.5 V
Gate Trigger Voltage
V
GT
1.5 V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 10
15 mA
Holding Current
I
H
V
D
= 6V, I
TM
= 500mA
50 mA
Critical Rate of Rise of Off-State Voltage
dv / dt
V
DRM
= Rated, Tc = 125C
Exponential Rise
50 V
/
s
Thermal Resistance
R
th (j-c)
Junction
to
Case
1.5
C
/
W
MARKING
NUMBER SYMBOL
MARK
SF16GZ51 F16GZ51
*1 TYPE
SF16JZ51 F16JZ51
*2
Example
8A:
January
1998
8B:
February
1998
8L:
December
1998
PDF 
ZIP
