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Электронный компонент: SM16GZ51

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SM16GZ51,SM16JZ51
2001-07-10
1
TOSHIBA
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ51,SM16JZ51
AC POWER CONTROL APPLICATIONS


l Repetitive Peak off-State Voltage : V
DRM
= 400, 600 V
l R.M.S On-State Current
: I
T (RMS)
= 16 A
l High Commutating (dv / dt)
: (dv / dt) c = 10 V / s
l Isolation Voltage
: V
ISOL
= 1500 V AC
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SM16GZ51 400
Repetitive Peak
Off-State Voltage
SM16JZ51
V
DRM
600
V
R. M. S. On-tate Current
(Full Sine Waveform Ta = 82C)
I
T (RMS)
16 A
150 (50 Hz)
Peak One Cylce Surge On-State
Current (Non-Repetitive)
I
TSM
165 (60 Hz)
A
I
2
t Limit Value
I
2
t 112.5
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di / dt
50
A / s
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Gate Voltage
V
GM
10 V
Peak Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Isolation Voltage (AC, t = 1 min.)
V
ISOL
1500 V
Note 1: di / dt test condition
V
DRM
= 0.5 Rated, I
TM
25 A, t
gw
10 s, t
gr
250 ns, i
gp
= I
GT
2.0
Unit: mm
JEDEC
JEITA
TOSHIBA 13-16A1A
Weight: 2.0g
SM16GZ51,SM16JZ51
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
= Rated
20 A
I
T2 (+) , Gate (+)
1.5
II
T2 (+) , Gate (-)
1.5
III T2
(-) , Gate (-)
1.5
Gate Trigger Voltage
IV
V
GT
V
D
= 12 V,
R
L
= 20
T2 (-) , Gate (+)
V
I
T2 (+) , Gate (+)
30
II
T2 (+) , Gate (-)
30
III T2
(-) , Gate (-)
30
Gate Trigger Current
IV
I
GT
V
D
= 12 V,
R
L
= 20
T2 (-) , Gate (+)
mA
Peak On-State Voltage
V
TM
I
TM
= 25 A
1.5 V
Gate Non-Trigger Voltage
V
GD
V
D
= Rated, Tc = 125C
0.2
V
Holding Current
I
H
V
D
= 12 V, I
TM
= 1 A
50 mA
Thermal Resistance
R
th (j-c)
Junction to Case, AC
1.8
C
/
W
Critical Rate of Rise of Off-State Voltage
dv / dt
V
DRM
= Rated,
T
j
= 125C
Exponential Rise
300 V
/
s
Critical Rate of Rise of Off-State Voltage
at Commutation
(dv / dt) c
V
DRM
= 400 V, T
j
= 125C
(di / dt) c = -8.7 A / ms
10
V
/
s
MARKING
*NUMBER SYMBOL
MARK
M16GZ51 SM16GZ51
*1 TYPE
M16JZ51 SM16JZ51
*2
Example
8A : January 1998
8B : February 1998
8L : December 1998
SM16GZ51,SM16JZ51
2001-07-10
3
SM16GZ51,SM16JZ51
2001-07-10
4
SM16GZ51,SM16JZ51
2001-07-10
5

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RESTRICTIONS ON PRODUCT USE