SM2LZ47
2001-07-10
1
TOSHIBA
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 800V
l R.M.S. On-State Current
: I
T (RMS)
= 2A
l High Commutation (dv / dt)
: (dv / dt) c = 5V / s (Min.)
l Isolation Voltage
: V
ISOL
= 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage
V
DRM
800 V
R.M.S. On-State Current
(Full Sine Waveform)
I
T (RMS)
2 A
8 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
8.8 (60Hz)
A
I
2
t Limit Value
I
2
t 0.32
A
2
s
Critical Rate of Rise of On-State
Current (Note)
di / dt
50
A / s
Peak Gate Power Dissipation
P
GM
3 W
Average Gate Power Dissipation
P
G (AV)
0.3 W
Peak Gate Voltage
V
FGM
10 V
Peak Gate Current
I
GM
1.6 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Isolation Voltage (AC, t = 1min.)
V
ISOL
1500 V
Note:
di / dt test condition
V
DRM
= 400V, I
TM
3A, t
gw
10s, t
gr
250ns, i
gp
= I
GT
2.0
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10H1A
Weight: 1.7g
SM2LZ47
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
= 800V
20 A
I
T2 (+) , Gate (+)
1.5
II
T2 (+) , Gate (-)
1.5
Gate Trigger Voltage
III
V
GT
V
D
= 12V,
R
L
= 20
T2 (-) , Gate (-)
1.5
V
I
T2 (+) , Gate (+)
10
II
T2 (+) , Gate (-)
10
Gate Trigger Current
III
I
GT
V
D
= 12V,
R
L
= 20
T2 (-) , Gate (-)
10
mA
Peak On-State Voltage
V
TM
I
TM
= 3A
2.0 V
Gate Non-Trigger Voltage
V
GD
V
D
= 800V, Tc = 125C
0.2
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
10 mA
Thermal Resistance
R
th (j-a)
Junction to Ambient, AC
58
C
/
W
Critical Rate of Rise of Off-State Voltage
dv / dt
V
DRM
= 800V, T
j
= 125C
Exponential Rise
500 V
/
s
Critical Rate of Rise of Off-State Voltage
at Communication
(dv / dt) c
V
DRM
= 400V, T
j
= 125C
(di / dt) c = - 0.5A / ms
5
V
/
s
MARKING
NUMBER SYMBOL
MARK
*1 Toshiba
Product
Mark
*2 TYPE
SM2LZ47
M2LZ47
*3
Example
8A : January 1998
8B : February 1998
8L : December 1998
SM2LZ47
2001-07-10
5
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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