SSM3K01T
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Small Package
Low on Resistance : R
on
= 120 m (max) (@V
GS
= 4 V)
:
R
on
= 150 m (max) (@V
GS
= 2.5 V)
Low Gate Threshold Voltage: V
th
= 0.6~1.1 V
(@V
DS
= 3 V, I
D
= 0.1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristic Symbol
Rating
Unit
Drain-Source voltage
V
DS
30 V
Gate-Source voltage
V
GSS
10 V
DC I
D
3.2
Drain current
Pulse
I
DP
(Note2)
6.4
A
Drain power dissipation (Ta
= 25C)
P
D
(Note1)
1250 mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Note1: Mounted on FR4 board
(25.4
mm
25.4 mm 1.6 t, Cu pad: 645 mm
2
, t
= 10 s)
Note2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3S1A
Weight: 10 mg (typ.)
SSM3K01T
2002-01-24
2
Marking Equivalent
Circuit
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 10 V, V
DS
= 0
1
mA
Drain-Source breakdown voltage
V
(BR) DSS
I
D
= 1 mA, V
GS
= 0
30
V
Drain Cut-off current
I
DSS
V
DS
= 30 V, V
GS
= 0
1 mA
Gate threshold voltage
V
th
V
DS
= 3 V, I
D
= 0.1 mA
0.6
1.1 V
Forward transfer admittance
|Y
fs
| V
DS
= 3 V, I
D
= 1.6 A
(Note3)
2.6
5.2
S
Drain-Source ON resistance
R
DS (ON)
I
D
= 1.6 A, V
GS
= 4 V
(Note3)
85 120
m
W
Drain-Source ON resistance
R
DS (ON)
I
D
= 1.3 A, V
GS
= 2.5 V
(Note3)
115 150
m
W
Input capacitance
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
152 pF
Reverse transfer capacitance
C
rss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
41 pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
102 pF
Turn-on time
t
on
45
Switching time
Turn-off time
t
off
V
DD
= 15 V, I
D
= 0.5 A
V
GS
= 0~2.5 V, R
G
= 4.7 W
69
nS
Note3: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
= 100 mA for
this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires
lower voltage than V
th
.
(relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of 2.5 V or higher to turn on this product.
3
1
2
3
1 2
K W
(a) Test circuit
2.5 V
0
I
D
IN
OUT
V
DD
10
ms
R
G
R
L
V
DD
= 15 V
R
G
= 4.7 W
D.U. <= 1%
V
IN
: t
r
, t
f
< 5 ns
COMMON SOURCE
Ta
= 25C
t
on
t
off
(b) V
IN
V
GS
(c) V
OUT
V
DS
2.5 V
0
V
DD
V
DS (ON)
t
r
t
f
10%
90%
90%
10%
SSM3K01T
2002-01-24
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
|Y
fs
| (S
)
D
r
ai
n
-
S
o
urc
e
o
n
r
e
si
stanc
e
RDS (ON)
(m
9
)
Drain-Source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-Source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(mA
)
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
S
o
urc
e
o
n
r
e
si
stanc
e
R
DS (ON)
(m
9
)
Ambient temperature Ta (C)
R
DS (ON)
Ta
Drain current I
D
(A)
|Y
fs
| I
D
C V
DS
C
apaci
t
anc
e C
(p
F)
Drain-Source voltage V
DS
(V)
0
0
Common Source
Ta
= 25C
10
VGS = 1.5 V
4
3.5
3
2.5
2
1.5
1
0.5
0.5 1 1.5 2
4.0
1.7 V
1.9 V
2.1
2.5
Common Source
Ta
= 25C
0
0
200
40
80
160
120
1 2 3 4 5
VGS = 2.5 V
VGS = 4 V
Common Source
250
0
-50
50
100
200
150
-25 125
150
75 100
50
0 25
VGS = 2.5 V, ID = 1.3 A
VGS = 4 V, ID = 1.6 A
10000
0.01
0
100
1000
1
10
0.1
1.5 2
0.5 1
2.5 3
-25C
Common Source
VDS = 3 V
Ta
= 25C
100C
10
0.1
1000
100
100
1 10
Crss
Coss
Ciss
Common Source
VGS = 0
f
= 1 MHz
Ta
= 25C
0.1
0.01
10
1
10
0.1 1
Common Source
VDS = 3 V
Ta
= 25C
SSM3K01T
2002-01-24
4
Drain current I
D
(A)
t I
D
Switch
in
g
ti
m
e
t (
n
s)
Ambient temperature Ta (C)
P
D
Ta
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
10
0.01
Common Source
VDD = 15 V
VGS = 0~2.5 V
RG = 4.7 W
Ta
= 25C
1000
tr
ton
tf
toff
100
0.1 1
Drain-source voltage V
DS
(V)
Safe operating area
D
r
ai
n
cu
rre
nt
I
D
(A
)
r
th
tw
Pulse width tw (s)
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
r
th
(C
/W
)
1
0.001
Single pulse
Mounted on FR4 board
(25.4 mm
25.4 mm 1.6 t,
Cu Pad: 645 mm
2
)
1000
0.01 0.1 1 10 100
10
100
1000
0.01
1
10
0.1
0.1 100
10
1
Mounted on FR4 board
(25.4 mm
25.4 mm
1.6 t,
Cu Pad: 645 mm
2
)
DC operation
ID max (pulsed)
ID max (continuous)
10 ms*
1 ms*
10 s*
Ta
= 25C
*: Single nonrepetitive
Pulse
Ta
= 25C
Curves must be derated
linearly with increase in
temperature.
VDSS
max
1.5
0
0
Mounted on FR4 board
(25.4 mm
25.4 mm 1.6 t,
Cu Pad: 645 mm
2
t
= 10 s
DC
1
0.75
25 50 75 100 125
150
1.25
0.5
0.25
SSM3K01T
2002-01-24
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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