SSM6J08FU
2003-02-19
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch
DC-DC Converter
Small Package
Low on Resistance : R
on
= 0.18 (max) (@V
GS
= -4 V)
:
R
on
= 0.26 (max) (@V
GS
= -2.5 V)
Low Gate Threshold Voltage
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-Source voltage
V
DS
-20 V
Gate-Source voltage
V
GSS
12 V
DC I
D
-1.3
Drain current
Pulse I
DP
(Note 2)
-2.6
A
Drain power dissipation
P
D
(Note 1)
300 mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Note1: Mounted on FR4 board
(25.4 mm
25.4 mm 1.6 t, Cu Pad: 0.32 mm
2
6) Fig: 1.
Note2: The pulse width limited by max channel temperature.
Marking Equivalent
Circuit
Fig 1: 25.4 mm
25.4 mm
1.6 t,
Cu Pad: 0.32 mm
2
6
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2J1D
Weight: 6.8 mg (typ.)
0.4 mm
0.
8 m
m
6
K D D
4
1 2 3
5
4
1 2
3
6
5
SSM6J08FU
2003-02-19
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristic Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 12 V, V
DS
= 0
1
mA
V
(BR) DSS
I
D
= -1 mA, V
GS
= 0
-20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
= -1 mA, V
GS
= 12 V
-8
V
Drain Cut-off current
I
DSS
V
DS
= -20 V, V
GS
= 0
-1
mA
Gate threshold voltage
V
th
V
DS
= -3 V, I
D
= -0.1 mA
-0.5
-1.1
V
Forward transfer admittance
Y
fs
V
DS
= -3 V, I
D
= -0.65 A
(Note 3)
1.3
2.7
S
I
D
= -0.65 A, V
GS
= -4 V
(Note 3)
140 180
I
D
= -0.65 A, V
GS
= -2.5 V
(Note 3)
200 260
Drain-Source ON resistance
R
DS (ON)
I
D
= -0.65 A, V
GS
= -2.0 V
(Note 3)
260 460
m
W
Input capacitance
C
iss
V
DS
= -10 V, V
GS
= 0, f = 1 MHz
370 pF
Reverse transfer capacitance
C
rss
V
DS
= -10 V, V
GS
= 0, f = 1 MHz
73
pF
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0, f = 1 MHz
116 pF
Turn-on time
t
on
33 ns
Switching time
Turn-off time
t
off
V
DD
= -10 V, I
D
= -0.65 A,
V
GS
= 0~-2.5 V, R
G
= 4.7 W
47
ns
Note 3: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
= -100 mA
for this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires lower voltage than V
th
.
(relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of -2.5 V or higher to turn on this product.
(c) V
OUT
t
f
t
on
90%
10%
0 V
-2.5 V
90%
10%
t
off
t
r
V
DS (ON)
V
DD
(b) V
IN
V
DD
= -10 V
R
G
= 4.7 W
D.U
.
<
= 1%
V
IN
: t
r
, t
f
< 5 ns
COMMON SOURCE
Ta
= 25C
V
DD
OUT
IN
0
-2.5 V
10
ms
R
G
I
D
(a) Test circuit
SSM6J08FU
2003-02-19
3
D
r
ai
n
-
S
o
urc
e
o
n
r
e
si
stanc
e
R
DS
(ON
)
(
W
)
D
r
ai
n
-
S
o
urc
e
o
n
r
e
si
stanc
e
R
DS
(O
N
)
(
W
)
Drain-Source voltage VDS (V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I D
(A
)
Gate-Source voltage VGS (V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(mA
)
Drain current ID (A)
R
DS (ON)
I
D
D
r
ai
n
-
S
o
urc
e
o
n
r
e
si
stanc
e
R
DS
(ON
)
(
W
)
Gate-Source voltage VGS (V)
R
DS (ON)
V
GS
Ambient temperature Ta (C)
R
DS (ON)
Ta
Drain current ID (A)
|Y
fs
| I
D
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
|
Y
fs
|
(S
)
0
0
-0.5
-1.0
-1.5
-2.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-10
VGS = -1.4 V
-4.0 -2.5
-2.0
-1.8
-1.6
Common Source
Ta
= 25C
-0.01
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1
-1
-10
-100
-1000
-10000
Ta
= 25C
-25C
Common Source
VDS = -3 V
100C
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
0.2
0.4
0.6
0.8
1.0
Common Source
Ta
= 25C
-4
-2.5
VGS = -2 V
0
0
-2
-4
-6
-8
-10
-12
0.2
0.4
0.6
0.8
1.0
Common Source
ID = -0.65 A
Ta
= 25C
0.01
-0.01
-0.1
-1
-10
0.1
1
10
Common Source
VDS = -3 V
Ta
= 25C
0
-25 0 25 50 75 100 125 150
0.1
0.2
0.3
0.4
0.5
Common Source
ID = -0.65 A
VGS = -2 V
-2.5
-4
SSM6J08FU
2003-02-19
4
Gate
-S
o
u
rc
e v
o
l
t
a
ge
V
GS
(V
)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I DR
(A
)
Ambient temperature Ta (C)
V
th
Ta
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Drain-Source voltage V
DS
(V)
C V
DS
C
apaci
t
anc
e C
(p
F)
Drain current ID (A)
t I
D
Switch
in
g
ti
m
e
t (
n
s)
Drain-Source voltage VDS (V)
I
DR
V
DS
Total gate charge Qg (nC)
Dynamic Input Characteristic
Drain-Source voltage V
DS
(V)
Safe operating area
D
r
ai
n
cu
rre
nt
I D
(A
)
0
-25 0 25 50 75 100 125 150
-0.2
-0.4
-0.6
-0.8
-1.0
Common Source
VDS = -3 V
ID = -0.1 mA
0
0
-4
-8
-12
-16
-20
100
200
300
400
500
600
Common Source
VGS = 0
f
= 1 MHz
Ta
= 25C
Ciss
Coss
Crss
0
0 0.5 1
-0.5
-1.0
-1.5
-2.0
Common Source
VGS = 0
Ta
= 25C
G
D
S
I
DR
1
-0.01
-0.1
-1
-10
10
100
1000
toff
tf
ton
tr
Common Source
VDD = -10 V
VGS = 0~-2.5 V
Ta
= 25C
RG = 4.7 W
0
0 2 4 6 8
-2
-4
-6
-8
-10
VDD = -16 V
-10 V
Common Source
ID = -1.3 A
Ta
= 25C
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
DC operation
Ta
= 25C
ID max (pulsed)
VDSS max
10 ms*
100 ms*
Mounted on FR4 board
(25.4 mm
25.4 mm 1.6 t
Cu pad: 0.32 mm
2
6) Fig: 1
ID max (continuous)
*: Single nonrepetitive
Pulse
Ta
= 25C
Curves must be derated
linearly with increase in
temperature.
SSM6J08FU
2003-02-19
5
Pulse width tw (s)
r
th
t
w
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
r
th
(C
/W
)
Ambient temperature Ta (C)
P
D
Ta
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(mW
)
20
0 40
60 100
120
350
150
0
50
100
200
250
80 140
160
300
Mounted on FR4 board
(25.4 mm
25.4 mm 1.6 t,
Cu pad: 0.32 mm
2
6)
Fig: 1
1
0.001 0.01 0.1
1
10 100 1000
10
100
1000
Single pulse
Mounted on FR4 board (25.4 mm
25.4 mm 1.6 t,
Cu pad: 0.32 mm
2
6)
Fig: 1
SSM6J08FU
2003-02-19
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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